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Thin film transistor with multiple oxide semiconductor layers

  • US 9,437,747 B2
  • Filed: 10/02/2015
  • Issued: 09/06/2016
  • Est. Priority Date: 06/15/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating layer;

    a first oxide semiconductor layer over the first insulating layer;

    a second oxide semiconductor layer over the first oxide semiconductor layer;

    a third oxide semiconductor layer over the second oxide semiconductor layer; and

    a second insulating layer over the third oxide semiconductor layer,wherein the second oxide semiconductor layer comprises In, Ga, and Zn,wherein the second oxide semiconductor layer has higher conductivity than the third oxide semiconductor layer and the first oxide semiconductor layer,wherein the first oxide semiconductor layer has tapered side surfaces,wherein the second oxide semiconductor layer has tapered side surfaces, andwherein the third oxide semiconductor layer is in contact with the tapered side surfaces of the second oxide semiconductor layer.

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