Thin film transistor with multiple oxide semiconductor layers
First Claim
1. A semiconductor device comprising:
- a first insulating layer;
a first oxide semiconductor layer over the first insulating layer;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a third oxide semiconductor layer over the second oxide semiconductor layer; and
a second insulating layer over the third oxide semiconductor layer,wherein the second oxide semiconductor layer comprises In, Ga, and Zn,wherein the second oxide semiconductor layer has higher conductivity than the third oxide semiconductor layer and the first oxide semiconductor layer,wherein the first oxide semiconductor layer has tapered side surfaces,wherein the second oxide semiconductor layer has tapered side surfaces, andwherein the third oxide semiconductor layer is in contact with the tapered side surfaces of the second oxide semiconductor layer.
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Abstract
A transistor having high field-effect mobility is provided. In order that an oxide semiconductor layer through which carriers flow is not in contact with a gate insulating film, a buried channel structure in which the oxide semiconductor layer through which carriers flow is separated from the gate insulating film is employed. Specifically, an oxide semiconductor layer having high conductivity is provided between two oxide semiconductor layers. Further, an impurity element is added to the oxide semiconductor layer in a self-aligned manner so that the resistance of a region in contact with an electrode layer is reduced. Further, the oxide semiconductor layer in contact with the gate insulating layer has a larger thickness than the oxide semiconductor layer having high conductivity.
279 Citations
17 Claims
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1. A semiconductor device comprising:
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a first insulating layer; a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a third oxide semiconductor layer over the second oxide semiconductor layer; and a second insulating layer over the third oxide semiconductor layer, wherein the second oxide semiconductor layer comprises In, Ga, and Zn, wherein the second oxide semiconductor layer has higher conductivity than the third oxide semiconductor layer and the first oxide semiconductor layer, wherein the first oxide semiconductor layer has tapered side surfaces, wherein the second oxide semiconductor layer has tapered side surfaces, and wherein the third oxide semiconductor layer is in contact with the tapered side surfaces of the second oxide semiconductor layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10)
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2. A semiconductor device comprising:
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a first insulating layer; a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a third oxide semiconductor layer over the second oxide semiconductor layer; and a second insulating layer over the third oxide semiconductor layer, wherein the second oxide semiconductor layer comprises In, Ga, and Zn, wherein the second oxide semiconductor layer has a smaller thickness than the first oxide semiconductor layer and the third oxide semiconductor layer, wherein the first oxide semiconductor layer has tapered side surfaces, wherein the second oxide semiconductor layer has tapered side surfaces, and wherein the third oxide semiconductor layer is in contact with the tapered side surfaces of the second oxide semiconductor layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification