Light emitting device

• US 9,437,781 B2
• Filed: 10/29/2015
• Issued: 09/06/2016
• Est. Priority Date: 10/29/2014
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jung, Se Yeon, Lee, Yong Gyeong
• Primary Examiner(s): Schoenholtz, Joseph
• Application Number:
  US14/927,112
• Publication Number:
  US 20160126423A1
• Time in Patent Office: 313 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.

Claims

1. A light emitting device comprising:

a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer arranged in a vertical direction;

a first current blocking layer and a second current blocking layer arranged on the light emitting structure to be separated from each other;

a light-transmitting conductive layer arranged on the first current blocking layer and the second current blocking layer and the light emitting structure;

a first electrode and a second electrode electrically coupled to the first semiconductor layer and the second conductive semiconductor layer, respectively;

a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer; and

a through electrode arranged inside the through hole,

wherein the through electrode extends from the first electrode,

wherein the through electrode non-overlaps with the first current blocking layer in the vertical direction, and

wherein the first electrode overlaps the first current blocking layer in the vertical direction.

2. The light emitting device of claim 1, further comprising an insulation layer arranged between the first electrode and the first current blocking layer and between the second electrode and the second current blocking layer.

3. The light emitting device of claim 2, wherein the through hole is formed through the insulation layer.

4. The light emitting device of claim 1, wherein the through electrode and the first current blocking layer are linearly arranged in a horizontal direction.

5. The light emitting device of claim 1, wherein the insulation layer is arranged in the through hole to extend around the through electrode.

6. The light emitting device of claim 1, wherein the first electrode comprises a first bonding pad and a first branched-finger electrode.

7. The light emitting device of claim 6, wherein the first bonding pad is arranged at a first edge region of the light emitting device.

8. The light emitting device of claim 6, wherein at least a portion of the first branched-finger electrode overlaps the through electrode and the first current blocking layer in the vertical direction.

9. The light emitting device of claim 1, wherein the through electrode has a length smaller than a distance between neighboring through electrodes.

10. The light emitting device of claim 1, wherein the second electrode comprises a second bonding pad and a second branched-finger electrode.

11. The light emitting device of claim 10, wherein the second bonding pad is arranged at a second edge region of the light emitting device.

12. The light emitting device of claim 10, wherein a portion of the second branched-finger electrode overlaps the second current blocking layer in the vertical direction.

13. The light emitting device of claim 1, wherein a portion of the insulation layer is opened to form an open region, and the light-transmitting conductive layer is exposed through the open region.

14. The light emitting device of claim 13, wherein the light-transmitting conductive layer and the second electrode are brought into direct contact at the open region.

15. The light emitting device of claim 13, wherein the open region and the through electrode are alternately arranged in a horizontal direction.

16. The light emitting device of claim 1, wherein at least one of the first current blocking layer and the second current blocking layer is a distributed Bragg reflector (DBR) or an omni-directional reflector (ODR).

17. A light emitting device comprising:

a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;

a first current blocking layer and a second current blocking layer having a DBR or ODR structure and arranged on the light emitting structure to be separated from each other;

a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure and having the smallest thickness at regions corresponding respectively to the first current blocking layer and the second current blocking layer;

a first electrode and a second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively;

a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer, and the active layer to a portion of the first conductive semiconductor layer; and

a through electrode arranged in the through hole.

18. The light emitting device of claim 17, wherein the first current blocking layer has a plurality of portions arranged spaced apart from each other.

19. The light emitting device of claim 18, wherein the through hole is formed through the light-transmitting conductive layer, the second conductive semiconductor layer, and the active layer to a portion of the first conductive semiconductor layer, the light emitting device further comprises a through electrode arranged in the through hole, and a spacing between the portions constituting the first current blocking layer is the same as a length of the through hole.

20. A light emitting device comprising:

a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer arranged in a vertical direction;

a first current blocking layer and a second current blocking layer arranged on the light emitting structure to be separated from each other;

a light-transmitting conductive layer arranged on the first current blocking layer and the second current blocking layer and the light emitting structure;

a first electrode and a second electrode electrically coupled to the first semiconductor layer and the second conductive semiconductor layer, respectively; and

an insulation layer arranged between the first electrode and the first current blocking layer and between the second electrode and the second current blocking layer,

wherein a through hole is formed through the insulation layer, the light-transmitting conductive layer, the second conductive semiconductor layer, and the active layer to a portion of the first conductive semiconductor layer,

wherein the through hole does not overlap the first current blocking layer in the vertical direction,

wherein the first electrode overlaps the first current blocking layer in the vertical direction,

wherein a portion of the insulation layer is opened to form an open region, and the light-transmitting conductive layer is exposed through the open region, and

wherein the open region and the through hole are alternately arranged in a horizontal direction.