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TMR device with novel free layer structure

  • US 9,437,812 B2
  • Filed: 05/15/2015
  • Issued: 09/06/2016
  • Est. Priority Date: 09/22/2008
  • Status: Active Grant
First Claim
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1. A method of forming a sensor element in a magnetic device, comprising:

  • (a) sequentially forming a stack of layers comprised of a seed layer, anti-ferromagnetic (AFM) layer, and a SyAP pinned layer having an AP2/coupling/AP1 configuration on a substrate wherein the AP2 layer contacts said AFM layer;

    (b) forming a tunnel barrier having a first surface that contacts the AP1 layer and a second surface opposite the first surface;

    (c) forming a composite free layer on the tunnel barrier, the composite free layer is comprised of;

    (1) at least one CoFeB, CoFeBTb, CoB, CoBTb, or CoBTbL layer having a first thickness and where L is one of Ni, Ta, Ti, W, Zr, Hf, or Nb, and said at least one CoFeB, CoFeBTb, CoB, CoBTb, or CoBTbL layer is formed in an alternating configuration with the plurality of CoFeTb, or CoFeTbL layers; and

    (2) the plurality of CoFeTb, or CoFeTbL layers each having a second thickness less than the first thickness, and one of the CoFeTb, or CoFeTbL layers contacts said second surface of the tunnel barrier; and

    (d) forming a capping layer on the composite free layer.

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