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Semiconductor based analyte sensors and methods

  • US 9,439,585 B2
  • Filed: 02/03/2009
  • Issued: 09/13/2016
  • Est. Priority Date: 02/04/2008
  • Status: Active Grant
First Claim
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1. An analyte sensor, comprising:

  • a substrate including a core of conductive material and a cladding of a semiconductor material, wherein the cladding is disposed around the core,a protective layer disposed concentrically around, immediately adjacent, and in contact with the substrate, the protective layer including a base layer positioned between a reference electrode and the cladding, wherein an additional layer covers the reference electrode, anda working electrode formed from a portion of the cladding not covered by the protective layer, the working electrode being at least partially coated with an electrochemically-active layer formed from at least one of a noble metal, carbon nanotubes, and a conductive polymer,an active region positioned on the substrate and adapted to be exposed to a fluid environment, the active region including an agent on the electrochemically-active layer on the working electrode.

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