System and method of improving implant quality in a plasma-based implant system
First Claim
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1. An ion implant system, comprising:
- a plasma chamber defined by a plurality of chamber walls;
an electrode disposed within said plasma chamber and electrically isolated from said chamber walls, wherein said electrode comprises a conductive outer surface;
a plasma chamber power supply for providing a first voltage to said chamber walls;
an electrode power supply for providing a second voltage to said electrode, wherein said first voltage and said second voltage are different during a cleaning mode;
a heating element disposed within said electrode; and
a heater power supply for providing a voltage to said heating element to heat said electrode.
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Abstract
A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode. During the cleaning mode, the plasma is biased at a higher potential than the walls, thereby causing energetic ions from the plasma to strike the plasma wall, dislodging material previously deposited. This may be achieved through the use of one or more electrodes disposed in the plasma chamber, which are maintained at a first voltage during normal operating mode, and a second, higher voltage, during the cleaning mode.
13 Citations
13 Claims
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1. An ion implant system, comprising:
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a plasma chamber defined by a plurality of chamber walls; an electrode disposed within said plasma chamber and electrically isolated from said chamber walls, wherein said electrode comprises a conductive outer surface; a plasma chamber power supply for providing a first voltage to said chamber walls; an electrode power supply for providing a second voltage to said electrode, wherein said first voltage and said second voltage are different during a cleaning mode; a heating element disposed within said electrode; and a heater power supply for providing a voltage to said heating element to heat said electrode. - View Dependent Claims (2)
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3. A method of operating an ion implant system, comprising:
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creating a plasma within a plasma chamber, defined by a plurality of chamber walls; providing an electrode within said plasma chamber, electrically isolated from said chamber walls; biasing said chamber walls and said electrode at the same voltage during a normal operating mode; and biasing said electrode at a first voltage more positive than a second voltage applied to said chamber walls during a cleaning mode, wherein ions from said plasma are attracted toward said chamber walls to clean said chamber walls during said cleaning mode. - View Dependent Claims (4, 5, 6)
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7. A method of operating an ion implant system, comprising:
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creating a plasma within a plasma chamber, said plasma chamber defined by a plurality of chamber walls; providing an electrode within said plasma chamber, electrically isolated from said chamber walls; biasing said chamber walls and said electrode at a first voltage during a normal operating mode; biasing a substrate at a voltage less than said first voltage; implanting ions from said plasma into said substrate during said biasing at said voltage less than said first voltage during said normal operating mode; and biasing said electrode at a second voltage more positive than a third voltage applied to said chamber walls after said implanting, wherein ions from said plasma are attracted toward said chamber walls to clean said chamber walls during a cleaning mode. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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Specification