VSL-based VT-compensation and analog program scheme for NAND array without CSL

• US 9,443,579 B2
• Filed: 08/17/2015
• Issued: 09/13/2016
• Est. Priority Date: 08/17/2014
• Status: Active Grant

• Current Assignee: Aplus Flash Technology, Inc.
• Original Assignee: Aplus Flash Technology, Inc.
• Inventors: Lee, Peter Wung
• Primary Examiner(s): Le, Vu
• Application Number:
  US14/828,427
• Publication Number:
  US 20160049192A1
• Time in Patent Office: 393 Days
• Field of Search: 365/51, 365/63, 365/185.17
• US Class Current: 1/1
• CPC Class Codes: G11C 11/5635 Erasing circuits
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 11/5671 using charge trapping in an insulator
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/08 Address circuits; Decoders; Word-line control circuits
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/26 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 16/3427 Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells
• CPC Class Codes: G11C 2207/2245 Memory devices with an internal cache buffer
• CPC Class Codes: G11C 2211/5641 Multilevel memory having cells with different number of storage levels
• CPC Class Codes: G11C 7/18 Bit line organisation; Bit line lay-out

Abstract

A YUKAI NAND array comprising multiple strings of all TLC and mixed TLC+SLC memory cells associated with hierarchical global/local bit lines (GBL/LBL) and each string being associated with one LBL and having adjacent LBL as a dedicated local source line (LSL) with full BL-shielding without wasting extra silicon area and without a common source line to connect all strings. Each of the LBLs is interleavingly associated with either an Odd or Even string selected via one pair of dummy cells inserted in each string and is used as one on-chip PCACHE register with full BL-shielding to perform concurrent ABL, AnP and Alt-WL program under multi-passes program schemes with LBL program voltage compensations and half-BL Odd/Even program-verify and read operations with individual V_SL-based Vt-compensation to mitigate high WL-WL and BL-BL coupling effects.

Claims

1. A NAND memory array with BL-hierarchical structure for concurrent All-BL (ABL), All-Vtn-Program (AnP) and Alternate-WL (Alt-WL) program, Half-BL (HBL) Odd/Even program-verify and read operations, the NAND memory array comprising:

a NAND plane comprising N number of columns of NAND memory cells connected in series along a bitline (BL) direction, the N number of columns being cascaded one another along a wordline (WL) direction perpendicular to the BL-direction, the NAND plane being divided to J number of HG groups arranged in the BL-direction, each HG group including L number of MG groups, each MG group including J′

number of LG groups, each LG group including H number of blocks, each block including N number of strings, each string including K number of NAND memory cells and a pair of string-select transistors respectively located in two ends of the string and a pair of dummy memory cells, wherein N, J, L, J′

, H, and K are respectively selected from integers of 2 and greater based on memory chip design;

a two-level bit line hierarchical structure comprising J rows of N number of first broken metal lines laid at a first level along the BL-direction connected by J−

1 rows of N number of GBL-divide transistors as N global bit lines (GBLs) through the J HG groups for connecting N corresponding columns to a page buffer, and N number of second broken metal lines per each MG group laid at a second level below the first level along the BL-direction with all Even-numbered N/2 second broken metal lines being independently grounded and N number of third broken metal lines per each same MG group laid at a third level below the second level along the BL-direction with all Odd-numbered N/2 third broken metal lines being independently grounded and all N/2 Odd-numbered second broken metal lines and all N/2 Even-numbered third broken metal lines together forming N local bit lines (LBLs) respectively connected to N GBLs via N Y-pass devices, each of the N LBLs being divided to J′

broken-LBLs by J′

-1 rows of N number of LBL-divide transistors, each broken-LBL being associated with a LG group and configured to connect either a drain node of an Odd-numbered string as a local bit line or a source node of a neighboring Even-numbered string as a local source line in alternative manner through the H number of strings along the BL-direction in the LG group without a common source line laid in the WL-direction in each block for all N number of strings, each LBL forming an on-chip capacitor C_MG with full electrical shielding at each of the second and third level;

a row of N/2 number of Odd precharge transistors per each LG group having corresponding drain nodes coupled to respective N/2 Odd-numbered broken-LBLs and corresponding source nodes coupled to a common precharge power line laid at a fourth level below the third level along the WL-direction, and a row of N/2 number of Even precharge transistors per same LG group having corresponding drain nodes coupled to respective Even-numbered broken-LBLs and corresponding source nodes coupled to the common precharge power line, the common precharge power line being optionally connected to a medium-high voltage up to 7V or connected to ground or other voltages for discharging;

wherein each row of N memory cells in any block forms a page and multiple pages in one or more selected LG groups are configured to perform multi-page concurrent All-BL (ABL), All-threshold-states-program (AnP), and Alternate-WL (Alt-WL) program operation with individual LBL program-voltage compensations in several program passes and to perform multi-page concurrent HBL Odd/Even program-verify and read operations in two cycles with option of applying individual source-line-voltage-based transistor threshold-level compensations for substantially reducing WL-WL and BL-BL coupling effects.

2. The NAND memory array of claim 1 wherein the N is number of bits per physical page selected from 4 KB, 8 KB, 16 KB or other suitable integers;

J is selected from 8, 16, or other suitable integer smaller than 16;

L is an integer greater than 7;

J′

is selected from 4, 8, or other suitable integer smaller than 8;

H is selected from 4, 8; and

K is selected from 8, 16, 32, 64, 128, 256 or other suitable integer smaller than 256.

3. The NAND memory array of claim 1 wherein each of the plurality of NAND memory transistors is either a transistor selected from 1-poly charge-trapping SONOS type and 2-poly floating gate type, with non-volatile design selected from either PMOS or NMOS NAND, 2T Flotox-based EEPROM, NAND-based NOR, and NAND-based Flash, based on a manufacturing technology selected from 2D type and 3D type, PMOS or NMOS NAND cell and flash technology types.

4. The NAND memory array of claim 1 further comprising a M/1 column decoder configured to consolidate N GBLs associated with the N number of columns to N/M GBLs directly connecting to a page buffer with a size reduced by M-fold, wherein M is an integer equal to 2^m with m=1, 2, 3.

5. The NAND memory array of claim 1 wherein each broken-GBL is associated with a HG group and configured to form a C_HG capacitor isolated by the GBL-divide transistors controlled by a BHG common gate signal, each broken-LBL is associated with a LG group and configured to form a C_LG capacitor isolated by the LBL-divide transistors controlled by a BLG common gate signal.

6. The NAND memory array of claim 1 wherein the two dummy memory cells in a same (Odd/Even-numbered) string are programmed with two SLC complementary Vts and any Odd-numbered dummy memory cell is programmed a SLC Vt complementary to any Even-numbered dummy memory cell in a same row so that an Odd/Even BL-select function in each block can be implemented for the HBL Odd/Even program-verify and read operations.

7. The NAND memory array of claim 1 wherein each Y-pass device comprises a 2-to-1 multiplexer so that total number of GBLs is reduced to N/2 in each HG group respectively coupling to N number of LBLs in each MG group and a reduced N/2-bit page buffer, making the GBLs with 4λ

pitch size versus LBLs with 2λ

pitch size.

8. The NAND memory array of claim 1 wherein the N/2 Odd/Even-numbered LBL at the second/third level optionally being concurrently charged to a LBL voltage up to 7V are interleaved with the N/2 Even/Odd second/third level broken metal lines being electrically grounded to substantially eliminate BL-BL coupling effect on TLC memory cell program.

9. The NAND memory array of claim 1 wherein each NAND memory cell in a string is configured to be a 3-bit TLC cell capable of storing eight threshold Vt levels of charges representing eight program states above the initial erase state in a negative Vt level.

10. The NAND memory array of claim 9 wherein the N broken-LBLs associated with a LG group are configured to be a N-bit LG PCACHE register capable of storing one of different analog voltages for providing individual bit line voltages to perform one of multi-page concurrent TLC ABL, AnP, and Alt-WL program operation with multiple program passes on one selected page of TLC memory cells in the LG group to convert an initial erase state of each TLC memory cell to a proper one state of two or more interim program states and further to a desired one state of 8 final TLC program states so that all N TLC memory cells in the selected page can be programmed in each program pass with a substantially same starting time and a substantially same finishing time without earlier lockout and with BL-BL coupling effect being substantially eliminated, each program pass being followed by one of multi-page two cycles of HBL program-verify operation, each of the N-bit LG PCACHE register being reassigning the medium-high voltage up to 7V as a program-inhibit voltage to stop programming on the corresponding TLC memory cell once an interim program state or one of 8 final TLC program states is verified.

11. The NAND memory array of claim 10 wherein the different analog voltages for providing individual bit line voltage are determined in accordance with threshold-voltage (Vt) differences among corresponding two or more interim program states or up to 8 final TLC program states of the N TLC memory cells in the selected page during each of the multiple program passes, wherein at least some values of the different analog voltages are greater than Vdd provided that the Vdd is an operation voltage of a low-voltage page buffer.

12. The NAND memory array of claim 11 wherein each of the different analog voltages for providing individual bit line voltage is further adjusted by considering a factor representing a WL-WL coupling effect from a TLC memory cell in an adjacent page varied in accordance with its status of being programmed specifically to one of 8 TLC program states in at least a last pass of the multiple program passes during the TLC program on the adjacent page.

13. The NAND memory array of claim 12 wherein each of the different analog voltages for providing individual bit line voltage is generated, per each of the multiple program passes, by first selecting three or four adjacent broken-LBLs along one corresponding column including one broken-LBL associated with the selected LG group that contains the N TLC memory cells in the selected page to be performed with iterative program and program-verify operation;

independently and sequentially precharging each broken-LBL from respective common precharge power lines with a predetermined voltage up to 7V;

resetting the precharged voltage in each broken-LBL by doing charge-sharing among the three or four broken-LBLs to generate a LBL voltage defined under each of the multiple program passes in accordance with varied states of corresponding one of the N TLC memory cells in the selected page, and passing the LBL voltage as one of the 8 different analog voltages to a floating-gate channel of the corresponding one TLC memory cell.

14. The NAND memory array of claim 13 wherein the one medium-high voltage for program-inhibiting is a value greater than the Vdd and close to but no greater than drain-source breakdown voltage of ˜

7V and is generated substantially in a same way as each of the different analog voltages, and at least one of the different analog voltages has a value higher than the Vdd.

15. The NAND memory array of claim 10 wherein the multi-page concurrent TLC program operation includes a 3-pass 1-2-8(coarse)-8(fine) TLC program scheme per page by performing an ABL first pass (1P) operation to program one initial erase state with a negative Vt value in a single wide distribution to two SLC-like interim states followed by a HBL program-verify operation, performing an ABL second pass (2P) operation to turn the two interim states to 8 coarse TLC-like program states followed by a HBL program-verify operation, and performing an ABL third pass (3P) operation to obtain 8 fine TLC program states from the previous 8 coarse TLC-like program states followed by a HBL program-verify operation.

16. The NAND memory array of claim 15 wherein the different analog voltages comprise two bit line program voltages of 2V (or Vdd whichever is lower) and 0V and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of TLC memory cells in the selected page in the selected LG group for performing the 1P operation on the selected page of TLC memory cells, or a first set of seven bit line program voltages of 0V, 0.5V, 1V, 1.5V, 2V, 2.5V, 3V and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of TLC memory cells in the selected page in the selected LG group for performing the 2P operation on the selected page of TLC memory cells, or eight second sets of seven bit line program voltages and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of TLC memory cells in the selected page in the selected LG group for performing the 3P operation on the selected page of TLC memory cells, the eight second sets of seven bit line program voltages being adjusted from the first set of seven voltages for 2P operation based on respective to-be-programmed states of the selected page of TLC memory cells and incorporation of WL-WL coupling effect from the adjacent page of TLC memory cells varied in accordance with its status been programmed specifically to one of 8 program states by its own TLC program.

17. The NAND memory array of claim 10 wherein the multi-page concurrent TLC program operation includes a 3-pass 1-2-5-8 TLC program scheme per page by performing an ABL first pass (1P) operation to program one initial erase state with a negative Vt value in a single wide distribution to two SLC-like interim states followed by a HBL program-verify operation, performing an ABL second pass (2P′

) operation to turn the two interim states to 5 MLC-like interim states followed by a HBL program-verify operation, and performing an ABL third pass (3P″

) operation to obtain 8 final TLC program states from the previous 5 MLC-like interim states followed by a HBL program-verify operation.

18. The NAND memory array of claim 17 wherein the different analog voltages respectively comprise two bit line program voltages of 2V (or Vdd whichever is lower) and 0V and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of TLC memory cells in the selected page in the selected LG group for performing the 1P operation on the selected page of TLC memory cells, or four bit line program voltages of 0V, 1V, 2V, 2.5V and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of TLC memory cells in the selected page in the selected LG group for performing the 2P′

operation, or eight sets of seven bit line program voltages and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of TLC memory cells in the selected page in the selected LG group for performing the 3P″

operation on the selected page of TLC memory cells, the eight sets of seven bit line program voltages being determined by incorporation of respective Vt-distribution differences of 8 programmed states of the selected page of TLC memory cells and WL-WL coupling effect from the adjacent page of TLC memory cells varied in accordance with its status been programmed specifically to one of 8 program states by its own TLC program.

19. The NAND memory array of claim 10 wherein the multi-page concurrent TLC program operation includes a 2-pass 1-5-8 TLC program scheme per page by performing an ABL first pass (1P) operation to program one initial erase state with a negative Vt value in a single wide distribution to 5 MLC-like interim states followed by a HBL program-verify operation, then performing an ABL second pass (2P) operation to obtain 8 TLC program states from the previous 5 MLC-like interim states followed by a HBL program-verify operation, and optionally performing an ABL third pass (3P) operation on a selected page of TLC memory cells with a boundary wordline to fine tune corresponding Vt distributions to obtain 8 final TLC program states from the previous 8 TLC program states followed by a HBL program-verify operation.

20. The NAND memory array of claim 19 wherein the different analog voltages respectively comprise five bit line program voltages of 0V, 1.2V, 2.4V, 3.3V, 3.9V and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of TLC memory cells in the selected page in the selected LG group for performing the 1P operation on the selected page of TLC memory cells, or eight first sets of seven bit line program voltages and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of TLC memory cells in the selected page in the selected LG group for performing the 2P operation on the selected page of TLC memory cells, the eight first sets of seven bit line program voltages being determined by incorporation of respective Vt-distribution differences of 8 programmed states of the selected page of TLC memory cells and WL-WL coupling effect from the adjacent page of TLC memory cells varied in accordance with its status been programmed specifically to one of 8 program states by its own TLC program, or optionally a second set of seven bit line program voltages and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of the TLC memory cells in the selected page in the selected LG group for performing the 3P operation on the selected page of TLC memory cells.

21. The NAND memory array of claim 10 wherein the multi-page concurrent TLC ABL, AnP, and Alt-WL program operation with multiple program passes is performed in an alternate-WL scheme with rotations of performing each of the multiple program passes among three adjacent WLs, each program pass performed on each TLC NAND memory cell at one of the three WLs inducing shifts and widening of threshold voltage distributions of two or more interim or final program states of neighboring TLC memory cell in a same string at adjacent WLs due to a WL-WL coupling effect.

22. The NAND memory array of claim 21 wherein the multi-page concurrent TLC ABL, AnP, and Alt-WL program operation under a 1-2-8(coarse)-8(fine) scheme or a 1-2-5-8 scheme comprises a series of operations on a first selected packet of pages respectively with a dummy wordline, a first boundary wordline, three non-boundary wordlines, and a second boundary wordline:

starting with a dummy cell program on one page of dummy memory cells with the dummy wordline;

performing a first pass program on a first page of TLC memory cells with the first boundary wordline;

performing a first pass program on a second page of TLC memory cells with a non-boundary wordline next to the first page;

performing a second pass program again on the first page of TLC memory cells with the first boundary wordline;

performing a first pass program alternately on a third page of TLC memory cells with a non-boundary wordline next to the second page;

performing a second pass program on the second page of TLC memory cells with the non-boundary wordline;

performing a third pass program again on the first page of TLC memory cells with the first boundary wordline;

performing a first pass program alternately on a fourth page of TLC memory cells with a non-boundary wordline next to the third page;

performing a second pass program again on the third page of TLC memory cells with the non-boundary wordline;

performing a third pass program again on the second page of TLC memory cells with the non-boundary wordline;

performing a first pass program on a fifth page of TLC memory cells with the second boundary wordline next to the fourth page;

performing a second pass program again on the fourth page of TLC memory cells with the non-boundary wordline;

performing a third pass program again on the third page of TLC memory cells with the non-boundary wordline;

performing a second pass program on the fifth page of TLC memory cells with the second boundary wordline;

performing a third pass program on the fourth page of TLC memory cells with the non-boundary wordline; and

performing a third pass program on the fifth page of TLC memory cells with the second boundary wordline if no program data is ready for any pages beyond the fifth page.

23. The NAND memory array of claim 22 wherein the multi-page concurrent TLC ABL, AnP, and Alt-WL program operation under a 1-2-8(coarse)-8(fine) scheme or a 1-2-5-8 scheme comprises a series of operations continued beyond the second boundary wordline on a second selected packet of pages respectively with a third boundary wordline next to the second boundary wordline, and three more non-boundary wordlines:

reading the data of the fifth page of TLC memory cells with the second boundary wordline subjected to a second pass program before performing a third pass program thereon;

performing a first pass program on a sixth page of TLC memory cells with the third boundary wordline next to the fifth page;

performing a first pass program on a seventh page of TLC memory cells with a non-boundary wordline next to the sixth page;

performing a second pass program again on the sixth page of TLC memory cells with the third boundary wordline;

performing a first pass program alternately on an eighth page of TLC memory cells with a non-boundary wordline next to the seventh page;

performing a second pass program again on the seventh page of TLC memory cells with the non-boundary wordline;

performing a third pass program alternately on the fifth page of TLC memory cells with the second boundary wordline based on the read data;

performing a third pass program again on the sixth page of TLC memory cells with the third boundary wordline;

performing a first pass program alternately on a ninth page of TLC memory cells with a non-boundary wordline next to the eighth page;

performing a second pass program on the seventh page of TLC memory cells with the second boundary wordline;

performing a third pass program again on the sixth page of TLC memory cells with the third boundary wordline.

24. The NAND memory array of claim 21 wherein the multi-page concurrent TLC ABL, AnP, and Alt-WL program operation under a 1-5-8 scheme comprises a series of operations on a first selected packet of pages respectively with two dummy wordlines, a first boundary wordline, three non-boundary wordlines, and a second boundary wordline:

performing dummy cell program sequentially on the two pages of dummy memory cells with the two dummy wordlines;

performing a first pass program on a first page of TLC memory cells with the first boundary wordline;

performing a first pass program on a second page of TLC memory cells with a non-boundary wordline next to the first page;

performing a second pass program again on the first page of TLC memory cells with the first boundary wordline;

performing a first pass program alternately on a third page of TLC memory cells with a non-boundary wordline next to the second page;

performing a second pass program on the second page of TLC memory cells with the non-boundary wordline;

performing a first pass program alternately on a fourth page of TLC memory cells with a non-boundary wordline next to the third page;

performing a second pass program again on the third page of TLC memory cells with the non-boundary wordline;

performing a first pass program on a fifth page of TLC memory cells with the second boundary wordline next to the fourth page;

performing a second pass program again on the fourth page of TLC memory cells with the non-boundary wordline; and

performing a second pass program on the fifth page of TLC memory cells with the second boundary wordline.

25. The NAND memory array of claim 24 wherein the multi-page concurrent TLC ABL, AnP, and Alt-WL program operation under a 1-5-8 scheme comprises a series of operations continued beyond the second boundary wordline on a second selected packet of pages respectively with a third boundary wordline next to the second boundary wordline followed by three more non-boundary wordlines:

performing a first pass program on a sixth page of TLC memory cells with the third boundary wordline next to the fifth page with the second boundary wordline;

performing a first pass program on a seventh page of TLC memory cells with a non-boundary wordline next to the sixth page;

performing a second pass program again on the sixth page of TLC memory cells with the third boundary wordline;

performing a first pass program alternately on an eighth page of TLC memory cells with a non-boundary wordline next to the seventh page;

performing a second pass program again on the seventh page of TLC memory cells with the non-boundary wordline;

performing a first pass program alternately on a ninth page of TLC memory cells with a non-boundary wordline next to the eighth page;

performing a second pass program again on the eighth page of TLC memory cells with the non-boundary wordline.

26. The NAND memory array of claim 24 wherein the multi-page concurrent TLC ABL, AnP, and Alt-WL program operation under a 1-5-8 scheme comprises a series of operations continued beyond the second boundary wordline on a second selected packet of pages respectively with a third boundary wordline next to the second boundary wordline followed by three more non-boundary wordlines:

reading data in the fifth page of TLC memory cells with the second boundary wordline after the second pass program thereon;

performing a first pass program on a sixth page of TLC memory cells with the third boundary wordline next to the fifth page;

performing a first pass program on a seventh page of TLC memory cells with a non-boundary wordline next to the sixth page;

performing a third pass program on the fifth page of TLC memory cells with the second boundary wordline;

performing a second pass program again on the sixth page of TLC memory cells with the third boundary wordline;

performing a first pass program alternately on an eighth page of TLC memory cells with a non-boundary wordline next to the seventh page;

performing a second pass program again on the seventh page of TLC memory cells with the non-boundary wordline;

performing a first pass program alternately on a ninth page of TLC memory cells with a non-boundary wordline next to the eighth page;

performing a second pass program again on the eighth page of TLC memory cells with the non-boundary wordline.

27. The NAND memory array of claim 10 wherein the multi-page TLC ABL, AnP, and Alt-WL program operation is performed concurrently on M pages of TLC memory cells selected on a basis of one-page-per-LG-group from one or more MG groups of one or more HG groups, wherein for programming each of the M pages of TLC memory cells, seven N-bit MG PCACHE registers formed by seven rows of N LBLs associated with seven MG groups are selected from total L MG groups of one HG group wherein at least one of the seven MG groups contains said one page of TLC memory cells, the first six N-bit MG PCACHE registers being used for respectively storing two copies of three TLC logic-page data (MSB, CSB, and LSB) in a digital pattern of 7V/Vss converted from Vdd/Vss sequentially loaded from I/Os and one additional N-bit LG PCACHE register formed by a row of N broken-LBLs is selected from the at least one MG group that contains said one page of TLC memory cells for temporarily storing an interim TLC program data loaded from the page buffer during iterative recall and write-back operations for TLC program and program-verify.

28. The NAND memory array of claim 27 wherein each recall operation per page is performed in HBL manner on Odd/Even-BL basis in two cycles, each cycle being configured to read half-page N/2-bit of one of the three TLC logic-page data stored in corresponding one of six N/2-bit MG PCACHE registers to N/2-bit page buffer by performing Odd/Even-BL charge-sharing operation between the associated LBL and corresponding GBL with N/2-bit data pattern voltages in Vinh-7V/Vss being diluted down to (1/J×

L)Vinh/Vss.

29. The NAND memory array of claim 27 wherein each write-back operation per page is performed in ABL manner in one cycle after each two-cycle recall operation to reload N-bit of one of the three TLC logic-page data back from the page buffer to corresponding two N-bit MG PCACHE registers associated with two MG groups in two cycles by performing, per each cycle, a concurrent precharging operation on one N-bit MG PCACHE registers with Vinh-7V from the common precharge power line and a voltage-conversion operation to change digital data pattern from Vdd/Vss to Vinh/Vss via the N-bit page buffer and up to J HG PACHE registers depending on locations of the one of two MG groups in the HG group selected out of the J HG groups relative to the page buffer.

30. The NAND memory array of claim 10 wherein the multi-page program-verify operation is performed concurrently on M pages of TLC memory cells selected on a basis of one-page-per-MG-group from one or more MG groups of one or more HG groups, M being an integer up to J×

L, wherein for program-verifying each selected page of the M pages of TLC memory cells, 6 MG PCACHE registers formed by six rows of N LBLs are kept storing two copies of three pages of TLC page digital data of MSB, CSB, and LSB in a digital pattern of Vinh/Vss and one additional N-bit MG PCACHE register associated with another MG group that contains said page is used to iteratively store N-bit interim program-verify data and precharged voltage by performing a two-cycle operation on Odd/Even-BL basis, a first cycle operation for Odd-BL including precharging all Odd N/2-bit MG PCACHE register with a Vinh-7V from the common precharge power line, applying a pre-determined program-verify voltage to a common wordline of the selected page, selectively discharging individual Odd LBLs toward 0V preset at neighboring Even LBLs from the page buffer if corresponding threshold voltages of the TLC memory cells in some Odd LBLs are smaller than the pre-determined program-verify voltage or otherwise retaining Vinh in corresponding Odd LBLs, performing charge-sharing of the Odd N/2-bit MG PCACHE register with Odd N/2-bit GBL to send a diluted GBL voltage to a sense amplifier in the page buffer, the sense amplifier including an Multiplier capable of detecting a maximum diluted GBL voltage corresponding to the retained Vinh to determine that one corresponding TLC memory cell has been successfully programmed and detecting a minimum mV drop from the maximum diluted GBL voltage to determine that another corresponding TLC memory cell has not been successfully programmed;

repeating above operations in the second cycle for Even-BL.

31. The NAND memory array of claim 10 wherein each selected page of the M pages of TLC memory cells selected on a basis on one-page-per-MG-group from one or more MG groups of one or more HG groups is subjected to a concurrent HBL Odd/Even-BL TLC read operation in two cycles, a first cycle operation for Odd-BL including precharging all Odd N/2-bit MG PCACHE register associated with the MG group that contains the selected page with a Vinh-7V from the common precharge power line, sequentially applying a set of 7 uprising read voltages to a common wordline of said page, selectively discharging individual Odd LBLs toward 0V preset at neighboring Even LBLs from the page buffer if corresponding threshold voltages of the TLC memory cells in corresponding Odd LBLs are smaller than particular one of the 7 uprising read voltages or otherwise retaining Vinh-7V at the corresponding Odd LBLs, performing charge-sharing of the Odd N/2-bit MG PCACHE register with Odd N/2-bit GBL to send a GBL signal corresponding to each TLC memory cell in the selected page to a sense amplifier in the page buffer to determine a state of the TLC memory cell by detecting and decoding the GBL signal;

repeating above operations in the second cycle for Even-BL.

32. The NAND memory array of claim 31 wherein the selectively discharging individual Odd/Even LBLs comprises individually applying predetermined voltages from the page buffer via the corresponding GBLs to respective neighboring Even/Odd LBLs as local source lines of the Odd/Even-numbered strings so that either one source line compensation voltage is commonly coupled to source nodes of all TLC memory cells of the selected page in Odd/Even-numbered strings or one or more up to 7 individual source line compensation voltages are coupled to respective source nodes of N TLC memory cells of the selected page in Odd/Even-numbered strings one-to-one corresponding to the 7 uprising read voltages and varying in accordance with different TLC program states of respective N TLC memory cells in corresponding Odd/Even-numbered strings in an adjacent page.

33. The NAND memory array of claim 32 wherein the individual source line compensation voltages are all set to 0V for reading the selected page with a non-boundary wordline of a packet of multiple pages selected for performing TLC ABL, AnP, Alt-WL program operation, and are given to 8 set of 7 Vt-compensation values for reading the selected page with a boundary wordline of a packet of multiple pages selected for performing TLC ABL, AnP, Alt-WL program operation wherein each of the 8 sets of 7 Vt-compensation values is determined based on each of 8 possible programmed states of respective N opposing TLC memory cells in next page adjacent to the selected page with the boundary wordline.

34. The NAND memory array of claim 33 wherein the selectively discharging individual Odd/Even LBLs comprises adjusting respective values of the 7 uprising read voltages based on whether the selected page is with a non-boundary wordline of a packet of multiple pages selected for performing TLC program affected by N opposing TLC memory cells of respective N strings in adjacent page being programmed in certain TLC program states or with a boundary wordline of the packet affected by N opposing TLC memory cells of respective N strings in adjacent page being at an erase state or at a programmed state, and further based on whether the individual source line compensation voltages are applied when the selected page is with a boundary wordline.

35. The NAND memory array of claim 31 wherein the multi-page HBL Odd/Even TLC read operation for reading one or more pages of TLC memory cells programmed under a three-pass 1-2-8(coarse)-8(fine) TLC program scheme comprises:

receiving a command for reading a selected page of TLC memory cells with a first wordline;

determining that the first wordline is not a boundary wordline by reading out a mark bit “

1”

stored in bare area of the selected page;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a first set of 7 uprising read voltages of 0.5V, 1V, 1.5V, 2V, 2.5V, 3V, and 3.5V to the first wordline of the selected page;

determining that the first wordline is a boundary wordline by reading out a mark bit “

0”

stored in bare area of the selected page;

performing special read on TLC memory cells in next adjacent page using a wordline voltage of 0V;

determining that the TLC memory cells with the second wordline are all in erase states by reading out all negative threshold Vt values smaller than 0V;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a second set of 7 uprising read voltages of 0.1V, 0.6V, 1.1V, 1.6V, 2.1V, 2.6V, and 3.1V to the first wordline of the selected page;

determining that the TLC memory cells with the second wordline are not all in erase states by reading out at least one threshold Vt value greater than 0V;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a third set of 7 uprising read voltages of 0.9V, 1.4V, 1.9V, 2.4V, 2.9V, 3.4V, and 3.9V to the first wordline of the selected page.

36. The NAND memory array of claim 31 wherein the multi-page HBL Odd/Even TLC read operation for reading one or more pages of TLC memory cells programmed under a three-pass 1-2-5-8 TLC program scheme comprises:

receiving a command for reading a selected page of TLC memory cells with a first wordline;

determining that the selected page is not with a boundary wordline by reading out a mark bit “

1”

stored in bare area of the selected page;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a first set of 7 uprising read voltages of 0.5V, 1V, 1.5V, 2V, 2.5V, 3V, and 3.5V to the first wordline of the selected page;

determining that the first wordline is a boundary wordline by reading out a mark bit “

0”

stored in bare area of the selected page;

performing special read on TLC memory cells in next adjacent page using a wordline voltage of 0V;

determining that the TLC memory cells with the second wordline are all in erase states by reading out all negative threshold Vt values smaller than 0V;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a second set of 7 uprising read voltages of 0.1V, 0.6V, 1.1V, 1.6V, 2.1V, 2.6V, and 3.1V to the first wordline of the selected page;

determining that the TLC memory cells with the second wordline are not all in erase states by reading out at least one threshold Vt value greater than 0V;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a third set of 7 uprising read voltages of 0.9V, 1.4V, 1.9V, 2.4V, 2.9V, 3.4V. and 3.9V to the first wordline of the selected page and applying certain source line voltages for providing threshold state Vt-compensations to distinguish corresponding 8 TLC program states of the TLC memory cells in the selected page, wherein the Vt-compensations are individually implemented per cell by setting source lines of corresponding TLC memory cells with the first wordline to 0V in accordance with opposing TLC cells with the second wordline being at three following TLC program states P7, P5, and P3 and setting source lines of corresponding TLC memory cells with the first wordline to 0.03V in accordance with opposing TLC cells with the second wordline being at other TLC program states P6, P4, P2, P1, and P0.

37. The NAND memory array of claim 31 wherein the multi-page HBL Odd/Even TLC read operation for reading one or more pages of TLC memory cells programmed under a two-pass 1-5-8 TLC program scheme comprises:

receiving a command for reading a selected page of TLC memory cells with a first wordline;

determining that the first wordline is not a boundary wordline by reading out a mark bit “

1”

stored in bare area of the selected page;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a first set of 7 uprising read voltages of 0.7V, 1.3V, 1.9V, 2.5V, 3.1V, 3.7V, and 4.3V to the first wordline of the selected page;

determining that the first wordline is a boundary wordline by reading out the mark bit “

0”

stored in bare area of the selected page;

performing special read on TLC memory cells in next adjacent page using a wordline voltage of 0V;

determining that the TLC memory cells with the second wordline are all in erase states by reading out all negative threshold Vt values smaller than 0V;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a second set of 7 uprising read voltages of 0.7V, 1.3V, 1.9V, 2.5V, 3.1V, 3.7V, and 4.3V to the first wordline of the selected page;

determining that the TLC memory cells with the second wordline are not all in erase states by reading out at least one threshold Vt value greater than 0V;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a third set of 7 uprising read voltages of 1.1V, 1.7V, 2.3V, 2.9V, 3.5V, 4.1V, and 4.7V to the first wordline of the selected page and applying certain source line voltages of 0V, 0.05V, 0.1V, 0.14V, 0.18V, 0.23V, 0.27V, and 0.35V respectively for providing threshold state Vt-compensations to distinguish corresponding 8 TLC program states of the TLC memory cells in the selected page in accordance with the stored TLC data in the TLC memory cells with the second wordline.

38. The NAND memory array of claim 31 wherein the multi-page HBL Odd/Even TLC read operation for reading one or more pages of TLC memory cells programmed under a two-pass 1-5-8 TLC program scheme with an additional third-pass operation comprises:

receiving a command for reading a selected page of TLC memory cells with a first wordline;

determining that the first wordline is not a boundary wordline by reading out a first mark bit “

1”

stored in bare area of the selected page;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a first set of 7 uprising read voltages of 0.7V, 1.3V, 1.9V, 2.5V, 3.1V, 3.7V, and 4.3V to the first wordline of the selected page;

determining that the first wordline is a boundary wordline by reading out the first mark bit “

0”

stored in bare area of the selected page;

performing special read on TLC memory cells in next adjacent page using a wordline voltage of 0V;

determining that the TLC memory cells with the second wordline are all in erase states by reading out all negative threshold Vt values smaller than 0V;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a second set of 7 uprising read voltages of 0.7V, 1.3V, 1.9V, 2.5V, 3.1V, 3.7V, and 4.3V to the first wordline of the selected page;

determining that the TLC memory cells with the second wordline are not all in erase states by reading out at least one threshold Vt value greater than 0V;

performing the HBL Odd/Even TLC read operation in two cycles on the selected page of TLC memory cells by at least sequentially applying a third set of 7 uprising read voltages of 1.3V, 1.9V, 2.5V, 3.1V, 3.7V, 4.3V, and 4.9V to the first wordline of the selected page.

39. The NAND memory array of claim 1 wherein all NAND memory cells and two dummy memory cells in a string are configured with a plurality of mixed SLC+3TLC cell units, each unit comprising one SLC memory cell connecting three consecutive TLC memory cells, the two dummy memory cells being placed in the middle of the string to divide the string to a first sub-string and a second sub-string or being placed with one dummy memory cell next to the first string-select transistor at an end of the first sub-string and another dummy memory cell next to the second string-select transistor at another end of the second sub-string.

40. The NAND memory array of claim 39 wherein the N broken-LBLs associated with a LG group are configured to be a N-bit LG PCACHE register capable of storing one of different analog voltages for providing individual bit line voltages to perform one of multi-page concurrent mixed TLC+SLC ABL, AnP, and Alt-WL program operation with multiple program passes on one selected page of TLC memory cells from one of multiple units of mixed SLC page and three consecutive TLC pages in the LG group to convert an initial erase state of each TLC memory cell to a proper one state of two or more interim program states and further to a desired one state of 8 final TLC program states so that all N TLC memory cells in the selected page can be programmed in each program pass with a substantially same starting time and a substantially same finishing time without earlier lockout and with BL-BL coupling effect being substantially eliminated, each program pass being followed by one of multi-page two cycles of HBL program-verify operation, each of the N-bit LG PCACHE register being reassigning the medium-high voltage up to 7V as a program-inhibit voltage to stop programming on the corresponding TLC memory cell once an interim program state or one of 8 final TLC program states is verified.

41. The NAND memory array of claim 40 wherein the different analog voltages for providing individual bit line voltage are determined in accordance with threshold-voltage (Vt) differences among corresponding two or more interim program states or up to 8 final TLC program states of the N TLC memory cells in the selected page during each of the multiple program passes, wherein at least some values of the different analog voltages are greater than Vdd provided that the Vdd is an operation voltage of a low-voltage page buffer.

42. The NAND memory array of claim 41 wherein each of the different analog voltages for providing individual bit line voltage is further adjusted by considering a factor representing a WL-WL coupling effect from a TLC memory cell in an adjacent page varied in accordance with its status of being programmed specifically to one of 8 TLC program states in at least a last pass of the multiple program passes during the TLC program on the adjacent page, wherein the factor representing a WL-WL coupling effect is substantially reduced except that the selected page is a middle TLC page of the three consecutive TLC pages.

43. The NAND memory array of claim 42 wherein each of the different analog voltages for providing individual bit line voltage is generated, per each of the multiple program passes, by first selecting three or four adjacent broken-LBLs along one corresponding column including one broken-LBL associated with the selected LG group that contains the N TLC memory cells in the selected page to be performed with iterative program and program-verify operation;

independently and sequentially precharging each broken-LBL from respective common precharge power lines with a predetermined voltage up to 7V;

resetting the precharged voltage in each broken-LBL by doing charge-sharing among the three or four broken-LBLs to generate a LBL voltage defined under each of the multiple program passes in accordance with varied states of corresponding one of the N TLC memory cells in the selected page, and passing the LBL voltage as one of the 8 different analog voltages to a floating-gate channel of the corresponding one TLC memory cell.

44. The NAND memory array of claim 43 wherein the one medium-high voltage for program-inhibiting is a value greater than the Vdd and close to but no greater than drain-source breakdown voltage of ˜

7V and is generated substantially in a same way as each of the different analog voltages, and at least one of the different analog voltages has a value higher than Vdd.

45. The NAND memory array of claim 40 wherein the multi-page concurrent mixed TLC+SLC program operation includes a 2-pass 1-5-8 TLC program scheme per TLC page by performing an ABL first pass (1P) operation to program one initial erase state with a negative Vt value in a single wide distribution to 5 MLC-like interim states followed by a HBL program-verify operation, performing an ABL second pass (2P) operation to turn the 5 interim states to 8 TLC program states followed by a HBL program-verify operation, and a 2-pass 1-1 SLC program scheme plus an optional 1-pass 1-2 SLC program scheme per SLC page by performing an ABL first pass (1P′

) operation to shift one initial erase to a first interim state with a smaller negative Vt in a narrower distribution followed by a HBL verify operation, performing an ABL second pass (2P′

) operation to further shift the first interim state to a second interim state with minimum positive Vt value without program followed by a HBL verify operation, and performing an ABL SLC program (SP) operation to form a SLC program state with higher positive Vt value from the previous second interim state with a reduced Vt shift followed by a HBL program-verify operation.

46. The NAND memory array of claim 45 wherein the different analog voltages comprise five bit line program voltages of 0V, 1.2V, 2.4V, 3.3V, 3.9V and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of TLC memory cells in the selected TLC page from one of multiple units of mixed SLC page and three consecutive TLC pages in the selected LG group for performing the 1P operation on the selected page of TLC memory cells, or comprise eight sets of seven bit line program voltages and one program-inhibit voltage of ˜

7V passed respectively to floating gate channels of TLC memory cells in the selected page in the selected LG group for performing the 2P operation on the selected page of TLC memory cells, the eight sets of seven bit line program voltages being determined by incorporation of respective Vt-distribution differences of 8 programmed states of the selected page of TLC memory cells and WL-WL coupling effect from the adjacent page of TLC memory cells varied in accordance with its status been programmed specifically to one of 8 program states by its own TLC program, wherein the selected page is a TLC page with a non-boundary wordline and the next adjacent page is a TLC page with a boundary wordline.

47. The NAND memory array of claim 45 wherein the different analog voltages comprise a single bit line program voltage of 0V passed to floating gate channels of a selected page of SLC memory cells from one of the multiple units of mixed SLC page and three consecutive TLC pages in the selected LG group and a program-inhibit voltage for performing both 1P′

and 2P′

operations, or comprise a single bit line program voltage of 0V and one program-inhibit voltage of ˜

7V passed to floating gate channels of a selected page of SLC memory cells from one of the multiple units of mixed SLC page and three consecutive TLC pages in the selected LG group and a program-inhibit voltage for performing the SP operation.

48. The NAND memory array of claim 45 wherein the multi-page concurrent mixed TLC+SLC ABL, AnP, and Alt-WL program operation with multiple program passes is performed in an alternate-WL scheme with rotations of performing each of the multiple program passes among three adjacent mixed SLC and TLC pages, each program pass performed on each TLC NAND memory cell at one of TLC pages inducing shifts and widening of threshold voltage distributions of two or more interim or final program states of neighboring TLC or SLC memory cell in a same string at adjacent TLC or SLC pages due to a WL-WL coupling effect, each of 1P′

and 2P′

operation performed on each SLC NAND memory cell at one SLC page inducing shifts and widening of threshold voltage distributions of two or more interim or final program states of neighboring TLC memory cell in a same string at precedent adjacent TLC page due to a WL-WL coupling effect, each SP operation on each SLC NAND memory cell at one SLC page inducing slight widening of threshold voltage distributions of two or more interim or final program states of neighboring TLC memory cell in a same string at adjacent TLC pages due to a WL-WL coupling effect.

49. The NAND memory array of claim 48 wherein the multi-page concurrent mixed TLC+SLC ABL, AnP, and Alt-WL program operation under the 1-5-8 TLC scheme and the 2-pass 1-1 SLC program scheme comprises a series of operations on a first selected packet of mixed SLC+3TLC pages respectively with two dummy wordlines, a first boundary TLC wordline, a non-boundary TLC wordline, a second boundary TLC wordline, and a second SLC wordline:

starting with a dummy cell program on one page of dummy memory cells with a first one of two dummy wordlines;

performing a dummy cell program on a first page of dummy memory cells with a second one of the two dummy wordlines as a first SLC wordline;

performing a 1P program on a second page of TLC memory cells with the first boundary TLC wordline next to the first page;

performing a 1P program on a third page of TLC memory cells with the non-boundary TLC wordline next to the second page;

performing a 2P program again on the second page of TLC memory cells with the first boundary TLC wordline;

performing a 1P program alternately on a fourth page of TLC memory cells with the second boundary TLC wordline next to the third page;

performing a 2P program again on the third page of TLC memory cells with the non-boundary TLC wordline;

performing a 1P′

program alternately on a fifth page of SLC memory cells with a second SLC wordline next to the fourth page;

performing a 2P program again on the fourth page of TLC memory cells with the second boundary TLC wordline.

50. The NAND memory array of claim 49 wherein the multi-page concurrent mixed TLC+SLC ABL, AnP, and Alt-WL program operation under the 1-5-8 TLC scheme and the 2-pass 1-1 SLC program scheme comprises a series of operations beyond the second SLC wordline on a second selected packet of mixed SLC+3TLC pages respectively with a third boundary TLC wordline next to the second SLC wordline, a non-boundary TLC wordline, a fourth boundary TLC wordline, and a third SLC wordline:

performing a 1P program on a sixth page of TLC memory cells with the third boundary TLC wordline next to the fifth page;

performing a 1P program on a seventh page of TLC memory cells with the non-boundary TLC wordline next to the sixth page;

performing a 2P′

program on the fifth page of SLC memory cells with the second SLC wordline to cause threshold voltage Vt shift on corresponding TLC memory cells at precedent fourth page;

performing a 2P program again on the sixth page of TLC memory cells with the third boundary TLC wordline;

performing a 1P program alternately on an eighth page of TLC memory cells with the fourth boundary TLC wordline next to the seventh page;

performing a 2P program again on the seventh page of TLC memory cells with the non-boundary TLC wordline;

performing a 1P′

shift operation alternately on a ninth page of SLC memory cells with a third SLC wordline next to the eighth page;

performing a 2P program again on the eighth page of TLC memory cells with the fourth boundary TLC wordline.

51. The NAND memory array of claim 48 wherein the multi-page concurrent mixed TLC+SLC ABL, AnP, and Alt-WL program operation under the 1-5-8 TLC scheme and the 2-pass 1-1 plus a 1-2 SP program scheme comprises a series of operations on a selected packet of mixed SLC+3TLC pages respectively with a first boundary TLC wordline, a first non-boundary TLC wordline, a second boundary TLC wordline, a second SLC wordline, a third boundary TLC wordline, and a second non-boundary TLC wordline:

performing a 1P program on a first page of TLC memory cells with the first boundary TLC wordline;

performing a 1P program on a second page of TLC memory cells with the non-boundary TLC wordline next to the first page;

performing a 2P program again on the first page of TLC memory cells with the first boundary TLC wordline;

performing a 1P program alternately on a third page of TLC memory cells with the second boundary TLC wordline next to the second page;

performing a 2P program again on the second page of TLC memory cells with the first non-boundary TLC wordline;

performing a 1P′

program alternately on a fourth page of SLC memory cells with the second SLC wordline next to the third page;

performing a 2P program again on the third page of TLC memory cells with the second boundary TLC wordline;

performing a 1P program on a fifth page of TLC memory cells with the third boundary TLC wordline next to the fourth page;

performing a 1P program on a sixth page of TLC memory cells with the second non-boundary TLC wordline next to the fifth page;

performing a 2P′

program on the fourth page of SLC memory cells with the second SLC wordline;

performing a 2P program on the fifth page of TLC memory cells with the third boundary TLC wordline;

performing a 2P program on the sixth page of TLC memory cells with the second non-boundary wordline; and

performing a SP program on the fourth page of the SLC memory cells with the second SLC wordline to store a SLC data therein.

52. The NAND memory array of claim 40 wherein the multi-page program-verify operation is performed concurrently on M pages of TLC memory cells selected on a basis of one-page-per-MG-group from one of multiple units of mixed SLC page and consecutive TLC pages in one or more MG groups from of one or more HG groups, M being an integer up to J×

L, wherein for program-verifying each selected page of the M pages of TLC memory cells, 3 pairs of MG PCACHE registers formed by six rows of N LBLs are kept storing two copies of three pages of TLC page digital data of MSB, CSB, and LSB in a digital pattern of Vinh/Vss and one additional N-bit MG PCACHE register associated with another MG group that contains said page is used to iteratively store N-bit interim program-verify data and precharged voltage by performing a two-cycle operation on Odd/Even-BL basis, a first cycle operation for Odd-BL including precharging all Odd N/2-bit MG PCACHE register with a Vinh-7V from the common precharge power line, applying a pre-determined program-verify voltage to a common wordline of the selected page, selectively discharging individual Odd LBLs toward 0V preset at neighboring Even LBLs from the page buffer if corresponding threshold voltages of the TLC memory cells in some Odd LBLs are smaller than the pre-determined program-verify voltage or otherwise retaining Vinh in corresponding Odd LBLs, performing charge-sharing of the Odd N/2-bit MG PCACHE register with Odd N/2-bit GBL to send a diluted GBL voltage to a sense amplifier in the page buffer, the sense amplifier including an Multiplier capable of detecting a maximum diluted GBL voltage corresponding to the retained Vinh to determine that one corresponding TLC memory cell has been successfully programmed and detecting a minimum mV drop from the maximum diluted GBL voltage to determine that another corresponding TLC memory cell has not been successfully programmed;

repeating above operations in the second cycle for Even-BL.

53. The NAND memory array of claim 40 wherein each selected page of the M pages of TLC memory cells selected on a basis on one-page-per-MG-group from one of multiple units of mixed SLC page and consecutive TLC pages in one or more MG groups of one or more HG groups is subjected to a concurrent HBL Odd/Even-BL TLC read operation in two cycles, a first cycle operation for Odd-BL including precharging all Odd N/2-bit MG PCACHE register associated with the MG group that contains the selected page with a Vinh-7V from the common precharge power line, sequentially applying a set of 7 uprising read voltages to a common wordline of said page, selectively discharging individual Odd LBLs toward 0V preset at neighboring Even LBLs from the page buffer if corresponding threshold voltages of the TLC memory cells in corresponding Odd LBLs are smaller than particular one of the 7 uprising read voltages or otherwise retaining Vinh-7V at the corresponding Odd LBLs, performing charge-sharing of the Odd N/2-bit MG PCACHE register with Odd N/2-bit GBL to send a GBL signal corresponding to each TLC memory cell in the selected page to a sense amplifier in the page buffer to determine a state of the TLC memory cell by detecting and decoding the GBL signal;

repeating above operations in the second cycle for Even-BL.

54. The NAND memory array of claim 53 wherein the set of 7 uprising read voltages comprises 0.7V, 1.3 V, 1.9V, 2.5V, 3.1V, 3.7V, and 4.3V applied to the wordline of the selected page without source line voltage compensation for performing the HBL Odd/Even TLC read operation to distinguish 8 TLC program states of each TLC memory cell in the selected page.

55. The NAND memory array of claim 39 wherein each of the two dummy memory cells is configured to replace one regular SLC NAND memory cell in forming one of mixed SLC+3TLC cell units.

56. The NAND memory array of claim 40 wherein M×

3 SLC pages selected from M×

3 dispersed LG groups in one or more HG groups are configured to be programmed under a ABL N-bit concurrent SLC program to store 3 pages TLC N-bit digital data previously stored respectively in a first pair of N-bit MG PCAHCE registers for MSB page, a second pair of N-bit MG PCAHCE registers for CSB page, and a third pair of N-bit MG PCAHCE registers for LSB page, by setting corresponding control gate signals for M×

3 rows of first/second string-select transistors to Vdd/0V, setting gate voltages for unselected wordlines to Vpass ˜

10V, and setting gate voltages for corresponding M×

3 selected pages to one value greater than 18V for at least 10 s when system power supply is removed unintentionally.

57. The NAND memory array of claim 56 wherein the M pages of stored N-bit digital data in M SLC pages from M mixed SLC+3TLC units can be concurrently programmed back into a desired TLC page in a background program after system power supply is restored.