Method and structure for determining thermal cycle reliability
First Claim
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1. A test structure used to determine reliability performance, comprising:
- a patterned metallization structure having a plurality of interfaces, which form stress risers, the metallization structure including at least one of;
a via chain formed through layers of patterned metallization in the semiconductor structure such that a plurality of widths of vias are used to adjust strain in different layers; and
a dummy structure formed to provide a via density in an area of the semiconductor structure to adjust strain in adjacent structures of the test structure; and
a dielectric material surrounding the metallization structure, where a mismatch in coefficients of thermal expansion (CTE) between the metallization structure and the surrounding dielectric material exists such that failures occur under given stress conditions to provide a yield indicative of reliability for a manufacturing design.
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Abstract
A test structure used to determine reliability performance includes a patterned metallization structure having multiple interfaces, which provide stress risers. A dielectric material surrounds the metallization structure, where a mismatch in coefficients of thermal expansion (CTE) between the metallization structure and the surrounding dielectric material exist such that a thermal strain value is provided to cause failures under given stress conditions as a result of CTE mismatch to provide a yield indicative of reliability for a manufacturing design.
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10 Claims
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1. A test structure used to determine reliability performance, comprising:
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a patterned metallization structure having a plurality of interfaces, which form stress risers, the metallization structure including at least one of; a via chain formed through layers of patterned metallization in the semiconductor structure such that a plurality of widths of vias are used to adjust strain in different layers; and a dummy structure formed to provide a via density in an area of the semiconductor structure to adjust strain in adjacent structures of the test structure; and a dielectric material surrounding the metallization structure, where a mismatch in coefficients of thermal expansion (CTE) between the metallization structure and the surrounding dielectric material exists such that failures occur under given stress conditions to provide a yield indicative of reliability for a manufacturing design. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification