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Semiconductor device and method of embedding thermally conductive layer in interconnect structure for heat dissipation

  • US 9,443,828 B2
  • Filed: 04/23/2015
  • Issued: 09/13/2016
  • Est. Priority Date: 07/22/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first semiconductor die;

    a first thermally conductive layer formed over the first semiconductor die;

    an interconnect structure formed over the first semiconductor die; and

    a first conductive via formed through the first semiconductor die.

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