Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module

• US 9,443,876 B2
• Filed: 01/26/2015
• Issued: 09/13/2016
• Est. Priority Date: 02/05/2014
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Okazaki, Kenichi, Katayama, Masahiro, Nakada, Masataka
• Primary Examiner(s): YEUNG LOPEZ, FEIFEI
• Application Number:
  US14/604,999
• Publication Number:
  US 20150221678A1
• Time in Patent Office: 596 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors

Abstract

To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

Claims

1. A semiconductor device comprising:

a transistor comprising;

an oxide semiconductor film over a first insulating film;

a gate insulating film over the oxide semiconductor film;

a gate electrode over the gate insulating film;

a second insulating film over the gate electrode;

a third insulating film over the second insulating film;

a source electrode over the third insulating film; and

a drain electrode over the third insulating film,

wherein the first insulating film comprises an oxide insulating film,

wherein the second insulating film comprises a nitride insulating film,

wherein the source electrode is electrically connected to the oxide semiconductor film, and

wherein the drain electrode is electrically connected to the oxide semiconductor film, and

a capacitor comprising;

a first conductive film;

a second conductive film; and

the second insulating film,

wherein the first conductive film and the gate electrode are provided over the same surface,

wherein the second conductive film, the source electrode, and the drain electrode are provided over the same surface, and

wherein the second insulating film is provided between the first conductive film and the second conductive film.

2. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes oxygen, In, Zn, and M, and

wherein M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

3. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes a crystal part, and

wherein c-axis of the crystal part is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed.

4. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the gate electrode,

wherein the second region does not overlap with the gate electrode, and

wherein the second region is in contact with the second insulating film.

5. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the gate electrode,

wherein the second region does not overlap with the gate electrode, and

wherein crystallinity of the first region is higher than crystallinity of the second region.

6. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the gate electrode,

wherein the second region does not overlap with the gate electrode,

wherein the first region has a portion in which a concentration of an impurity element is a first concentration,

wherein the second region has a portion in which a concentration of the impurity element is a second concentration,

wherein the impurity element comprises one or more of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, chlorine, and a rare gas element, and

wherein the first concentration is different from the second concentration.

7. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the gate electrode,

wherein the second region does not overlap with the gate electrode,

wherein the first region has a portion in which a concentration of an impurity element is a first concentration,

wherein the second region has a portion in which a concentration of the impurity element is a second concentration,

wherein the impurity element comprises one or more of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, chlorine, and a rare gas element, and

wherein the second concentration is higher than the first concentration.

8. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the gate electrode,

wherein the second region does not overlap with the gate electrode,

wherein the first region has a portion in which a concentration of argon is a first concentration,

wherein the second region has a portion in which a concentration of argon is a second concentration, and

wherein the second concentration is higher than the first concentration.

9. A display device including the semiconductor device according to claim 1 and a display element.

10. A display module including the display device according to claim 9 and a touch sensor.

21. The semiconductor device according to claim 1,

wherein the oxide insulating film is at least any one of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide, and a Ga-Zn oxide, and

wherein the nitride insulating film is at least any one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide.

22. The semiconductor device according to claim 1,

wherein the oxide insulating film is at least a silicon oxynitride film, and

wherein the nitride insulating film is at least a silicon nitride film.

23. The semiconductor device according to claim 1,

wherein hydrogen concentration of the second insulating film is higher than or equal to 1×

10²² atoms/cm³.

24. The semiconductor device according to claim 1,

wherein the second insulating film comprises a portion in contact with the oxide semiconductor film between the first conductive film and the second conductive film.

11. A semiconductor device comprising:

a transistor comprising;

a first gate electrode over a first insulating film;

a first gate insulating film over the first gate electrode;

an oxide semiconductor film over the first gate insulating film;

a second gate insulating film over the oxide semiconductor film;

a second gate electrode over the second gate insulating film;

a second insulating film over the second gate electrode;

a third insulating film over the second insulating film;

a source electrode over the third insulating film; and

a drain electrode over the third insulating film,

wherein the first gate insulating film comprises an oxide insulating film,

wherein the second insulating film comprises a nitride insulating film,

wherein the source electrode is electrically connected to the oxide semiconductor film, and

wherein the drain electrode is electrically connected to the oxide semiconductor film, and

a capacitor comprising;

a first conductive film;

a second conductive film; and

the second insulating film,

wherein the first conductive film and the second gate electrode are provided over the same surface,

wherein the second conductive film, the source electrode, and the drain electrode are provided over the same surface, and

wherein the second insulating film is provided between the first conductive film and the second conductive film.

12. The semiconductor device according to claim 11,

wherein the oxide semiconductor film includes oxygen, In, Zn, and M, and

wherein M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

13. The semiconductor device according to claim 11,

wherein the oxide semiconductor film includes a crystal part, and

wherein c-axis of the crystal part is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed.

14. The semiconductor device according to claim 11,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the second gate electrode,

wherein the second region does not overlap with the second gate electrode, and

wherein the second region is in contact with the second insulating film.

15. The semiconductor device according to claim 11,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the second gate electrode,

wherein the second region does not overlap with the second gate electrode, and

wherein crystallinity of the first region is higher than crystallinity of the second region.

16. The semiconductor device according to claim 11,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the second gate electrode,

wherein the second region does not overlap with the second gate electrode,

wherein the first region has a portion in which a concentration of an impurity element is a first concentration,

wherein the second region has a portion in which a concentration of the impurity element is a second concentration,

wherein the impurity element comprises one or more of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, chlorine, and a rare gas element, and

wherein the first concentration is different from the second concentration.

17. The semiconductor device according to claim 11,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the second gate electrode,

wherein the second region does not overlap with the second gate electrode,

wherein the first region has a portion in which a concentration of an impurity element is a first concentration,

wherein the second region has a portion in which a concentration of the impurity element is a second concentration,

wherein the impurity element comprises one or more of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, chlorine, and a rare gas element, and

wherein the second concentration is higher than the first concentration.

18. The semiconductor device according to claim 11,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the second gate electrode,

wherein the second region does not overlap with the second gate electrode,

wherein the first region has a portion in which a concentration of argon is a first concentration,

wherein the second region has a portion in which a concentration of argon is a second concentration, and

wherein the second concentration is higher than the first concentration.

19. A display device including the semiconductor device according to claim 11 and a display element.

20. A display module including the display device according to claim 19 and a touch sensor.

25. The semiconductor device according to claim 11,

wherein the oxide insulating film is at least any one of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide, and a Ga-Zn oxide, and

wherein the nitride insulating film is at least any one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide.

26. The semiconductor device according to claim 11,

wherein the oxide insulating film is at least a silicon oxynitride film, and

wherein the nitride insulating film is at least a silicon nitride film.

27. The semiconductor device according to claim 11, wherein hydrogen concentration of the second insulating film is higher than or equal to 1×

10²² atoms/cm³.

28. The semiconductor device according to claim 11,

wherein the second insulating film comprises a portion in contact with the oxide semiconductor film between the first conductive film and the second conductive film.

29. A semiconductor device comprising:

a transistor comprising;

an oxide semiconductor film over a first insulating film;

a gate insulating film over the oxide semiconductor film;

a gate electrode over the gate insulating film;

a second insulating film over the gate electrode;

a third insulating film over the second insulating film;

a source electrode over the third insulating film; and

a drain electrode over the third insulating film,

wherein the first insulating film comprises a silicon oxynitride film,

wherein the second insulating film comprises a silicon nitride film,

wherein the source electrode is electrically connected to the oxide semiconductor film, and

wherein the drain electrode is electrically connected to the oxide semiconductor film, and

a capacitor comprising;

a first conductive film;

a second conductive film; and

the second insulating film,

wherein the first conductive film and the gate electrode are provided over the same surface,

wherein the second conductive film, the source electrode, and the drain electrode are provided over the same surface,

wherein the second insulating film is provided between the first conductive film and the second conductive film,

wherein the second insulating film comprises a portion in contact with the oxide semiconductor film between the first conductive film and the second conductive film, and

wherein hydrogen concentration of the second insulating film is higher to 1×

10²² atoms/cm³.

30. The semiconductor device according to claim 29,

wherein the oxide semiconductor film includes oxygen, In, Zn, and M and wherein M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

31. The semiconductor device according to claim 29,

wherein the oxide semiconductor film includes a crystal part, and

wherein c-axis of the crystal part is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed.

32. The semiconductor device according to claim 29,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the gate electrode,

wherein the second region does not overlap with the gate electrode, and

wherein the second region is in contact with the second insulating film.

33. The semiconductor device according to claim 29,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the gate electrode,

wherein the second region does not overlap with the gate electrode, and

wherein crystallinity of the first region is higher than crystallinity of the second region.

34. The semiconductor device according to claim 29,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the gate electrode,

wherein the second region does not overlap with the gate electrode,

wherein the first region has a portion in which a concentration of an impurity element is a first concentration,

wherein the second region has a portion in which a concentration of the impurity element is a second concentration,

wherein the impurity element comprises one or more of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, chlorine, and a rare gas element, and

wherein the first concentration is different from the second concentration.

35. The semiconductor device according to claim 29,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the gate electrode,

wherein the second region does not overlap with the gate electrode,

wherein the first region has a portion in which a concentration of an impurity element is a first concentration,

wherein the second region has a portion in which a concentration of the impurity element is a second concentration,

wherein the impurity element comprises one or more of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, chlorine, and a rare gas element, and

wherein the second concentration is higher than the first concentration.

36. The semiconductor device according to claim 29,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the gate electrode,

wherein the second region does not overlap with the gate electrode,

wherein the first region has a portion in which a concentration of argon is a first concentration,

wherein the second region has a portion in which a concentration of argon is a second concentration, and

wherein the second concentration is higher than the first concentration.

37. A display device including the semiconductor device according to claim 29 and a display element.

38. A display module including the display device according to claim 37 and a touch sensor.

39. A semiconductor device comprising:

a transistor comprising;

a first gate electrode over a first insulating film;

a first gate insulating film over the first gate electrode;

an oxide semiconductor film over the first gate insulating film;

a second gate insulating film over the oxide semiconductor film;

a second gate electrode over the second gate insulating film;

a second insulating film over the second gate electrode;

a third insulating film over the second insulating film;

a source electrode over the third insulating film; and

a drain electrode over the third insulating film,

wherein the first insulating film comprises a silicon oxynitride film,

wherein the second insulating film comprises a silicon nitride film,

wherein the source electrode is electrically connected to the oxide semiconductor film, and

wherein the drain electrode is electrically connected to the oxide semiconductor film, and

a capacitor comprising;

a first conductive film;

a second conductive film; and

the second insulating film,

wherein the first conductive film and the second gate electrode are provided over the same surface,

wherein the second conductive film, the source electrode, and the drain electrode are provided over the same surface,

wherein the second insulating film is provided between the first conductive film and the second conductive film,

wherein the second insulating film comprises a portion in contact with the oxide semiconductor film between the first conductive film and the second conductive film, and

wherein hydrogen concentration of the second insulating film is higher than or equal to 1×

10²² atoms/cm³.

40. The semiconductor device according to claim 39,

wherein the oxide semiconductor film includes oxygen, In, Zn, and M and wherein M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

41. The semiconductor device according to claim 39,

wherein the oxide semiconductor film includes a crystal part, and

wherein c-axis of the crystal part is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed.

42. The semiconductor device according to claim 39,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the second gate electrode,

wherein the second region does not overlap with the second gate electrode, and

wherein the second region is in contact with the second insulating film.

43. The semiconductor device according to claim 39,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the second gate electrode,

wherein the second region does not overlap with the second gate electrode, and

wherein crystallinity of the first region is higher than crystallinity of the second region.

44. The semiconductor device according to claim 39,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the second gate electrode,

wherein the second region does not overlap with the second gate electrode,

wherein the first region has a portion in which a concentration of an impurity element is a first concentration,

wherein the second region has a portion in which a concentration of the impurity element is a second concentration,

wherein the impurity element comprises one or more of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, chlorine, and a rare gas element, and

wherein the first concentration is different from the second concentration.

45. The semiconductor device according to claim 39,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the second gate electrode,

wherein the second region does not overlap with the second gate electrode,

wherein the first region has a portion in which a concentration of an impurity element is a first concentration,

wherein the second region has a portion in which a concentration of the impurity element is a second concentration,

wherein the impurity element comprises one or more of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, chlorine, and a rare gas element, and

wherein the second concentration is higher than the first concentration.

46. The semiconductor device according to claim 39,

wherein the oxide semiconductor film includes a first region and a second region,

wherein the first region overlaps with the second gate electrode,

wherein the second region does not overlap with the second gate electrode,

wherein the first region has a portion in which a concentration of argon is a first concentration,

wherein the second region has a portion in which a concentration of argon is a second concentration, and

wherein the second concentration is higher than the first concentration.

47. A display device including the semiconductor device according to claim 39 and a display element.

48. A display module including the display device according to claim 47 and a touch sensor.