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Thin film transistor panel having an etch stopper on semiconductor

  • US 9,443,877 B2
  • Filed: 07/14/2015
  • Issued: 09/13/2016
  • Est. Priority Date: 02/11/2010
  • Status: Active Grant
First Claim
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1. A panel comprising a thin film transistor, the panel comprising:

  • a substrate;

    a first electrode on the substrate;

    a first insulating layer on the first electrode;

    an oxide semiconductor pattern on the first insulating layer;

    an etch stopper on the oxide semiconductor pattern;

    a second electrode and a third electrode on the etch stopper and the oxide semiconductor pattern,wherein;

    lateralmost sidewalls of the etch stopper are substantially aligned with lateralmost sidewalls of the oxide semiconductor pattern; and

    a work function of the second electrode and the third electrode is lower than a work function of the oxide semiconductor pattern.

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