Thin film transistor panel having an etch stopper on semiconductor
First Claim
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1. A panel comprising a thin film transistor, the panel comprising:
- a substrate;
a first electrode on the substrate;
a first insulating layer on the first electrode;
an oxide semiconductor pattern on the first insulating layer;
an etch stopper on the oxide semiconductor pattern;
a second electrode and a third electrode on the etch stopper and the oxide semiconductor pattern,wherein;
lateralmost sidewalls of the etch stopper are substantially aligned with lateralmost sidewalls of the oxide semiconductor pattern; and
a work function of the second electrode and the third electrode is lower than a work function of the oxide semiconductor pattern.
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Abstract
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
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Citations
3 Claims
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1. A panel comprising a thin film transistor, the panel comprising:
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a substrate; a first electrode on the substrate; a first insulating layer on the first electrode; an oxide semiconductor pattern on the first insulating layer; an etch stopper on the oxide semiconductor pattern; a second electrode and a third electrode on the etch stopper and the oxide semiconductor pattern, wherein; lateralmost sidewalls of the etch stopper are substantially aligned with lateralmost sidewalls of the oxide semiconductor pattern; and a work function of the second electrode and the third electrode is lower than a work function of the oxide semiconductor pattern. - View Dependent Claims (2, 3)
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Specification