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Method of manufacturing semiconductor device including transistor and resistor incorporating hydrogen in oxide semiconductor

  • US 9,443,888 B2
  • Filed: 08/18/2014
  • Issued: 09/13/2016
  • Est. Priority Date: 12/24/2008
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device including a transistor and a passive element connected to the transistor, the method comprising the steps of:

  • forming an oxide semiconductor layer over a substrate;

    etching part of the oxide semiconductor layer to form a first layer for the transistor and a second layer for the passive element;

    forming an oxide insulating layer over and in contact with the first layer and the second layer;

    etching part of the oxide insulating layer to expose at least a portion of the second layer; and

    forming a nitride insulating layer over and in contact with the oxide insulating layer,wherein the nitride insulating layer contacts the exposed portion of the second layer so that hydrogen contained in the nitride insulating layer is introduced into the exposed portion and resistance of the exposed portion is lowered.

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