Semiconductor device and manufacturing method thereof
First Claim
Patent Images
1. A semiconductor device comprising:
- a first insulating film comprising oxygen;
an oxide semiconductor layer formed on the first insulating film, the oxide semiconductor layer comprising indium, zinc and gallium, wherein the oxide semiconductor layer includes a channel formation region and a source region and a drain region with the channel formation region therebetween;
a gate insulating layer over the oxide semiconductor layer;
a gate electrode over the channel formation region with the gate insulating layer therebetween;
a second insulating film comprising silicon oxide over the gate electrode; and
a third insulating film comprising aluminum oxide over the second insulating film,wherein the source region and the drain region are selectively doped with at least one element selected from rare gases and hydrogen,wherein at least a portion of the oxide semiconductor layer comprises a crystalline region where a c-axis is aligned approximately in parallel with a normal vector of a surface of the portion of the oxide semiconductor layer, andwherein the amount of oxygen released from the first insulating film is greater than or equal to 3.0×
1020 atoms/cm3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask.
197 Citations
30 Claims
-
1. A semiconductor device comprising:
-
a first insulating film comprising oxygen; an oxide semiconductor layer formed on the first insulating film, the oxide semiconductor layer comprising indium, zinc and gallium, wherein the oxide semiconductor layer includes a channel formation region and a source region and a drain region with the channel formation region therebetween; a gate insulating layer over the oxide semiconductor layer; a gate electrode over the channel formation region with the gate insulating layer therebetween; a second insulating film comprising silicon oxide over the gate electrode; and a third insulating film comprising aluminum oxide over the second insulating film, wherein the source region and the drain region are selectively doped with at least one element selected from rare gases and hydrogen, wherein at least a portion of the oxide semiconductor layer comprises a crystalline region where a c-axis is aligned approximately in parallel with a normal vector of a surface of the portion of the oxide semiconductor layer, and wherein the amount of oxygen released from the first insulating film is greater than or equal to 3.0×
1020 atoms/cm3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for manufacturing a semiconductor device, comprising the steps of:
-
forming a first insulating film comprising oxygen, wherein the amount of oxygen released from the first insulating film is greater than or equal to 3.0×
1020 atoms/cm3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms;forming an oxide semiconductor layer on the first insulating film, the oxide semiconductor layer comprising indium, zinc and gallium; forming a gate insulating layer over the oxide semiconductor layer; forming a gate electrode over the oxide semiconductor layer with the gate insulating layer therebetween; adding at least one element selected from rare gases and hydrogen to the oxide semiconductor layer with the use of the gate electrode as a mask; forming a second insulating film comprising silicon oxide over the gate electrode; and forming a third insulating film comprising aluminum oxide over the second insulating film. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
-
16. A semiconductor device comprising:
-
a first insulating film comprising oxygen; an oxide semiconductor layer formed on the first insulating film, the oxide semiconductor layer comprising indium, wherein the oxide semiconductor layer includes a channel formation region and a source region and a drain region with the channel formation region therebetween; a gate insulating layer over the oxide semiconductor layer; a gate electrode over the channel formation region with the gate insulating layer therebetween; a second insulating film comprising silicon oxide over the gate electrode; and a third insulating film comprising aluminum oxide over the second insulating film, wherein the source region and the drain region are selectively doped with at least one element selected from rare gases and hydrogen, wherein the first insulating film comprises oxygen and is capable of supplying oxygen to the oxide semiconductor layer, and wherein the amount of oxygen released from the first insulating film is greater than or equal to 3.0×
1020 atoms/cm3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
-
-
24. A semiconductor device comprising:
-
a first insulating film comprising oxygen; an oxide semiconductor layer formed on the first insulating film, the oxide semiconductor layer comprising indium, zinc and gallium, wherein the oxide semiconductor layer includes a channel formation region and a source region and a drain region with the channel formation region therebetween; a gate insulating layer over the oxide semiconductor layer; a gate electrode over the channel formation region with the gate insulating layer therebetween; a second insulating film comprising silicon oxide over the gate electrode; and a third insulating film comprising aluminum oxide over the second insulating film, wherein the source region and the drain region include hydrogen and rare gas, wherein at least a portion of the oxide semiconductor layer comprises a crystalline region where a c-axis is aligned approximately in parallel with a normal vector of a surface of the portion of the oxide semiconductor layer, wherein a concentration of hydrogen in the source region and the drain region is higher than a concentration of hydrogen in the channel formation region, and wherein a concentration of rare gas in the source region and the drain region is higher than a concentration of rare gas in the channel formation region. - View Dependent Claims (25, 26, 27, 28, 29, 30)
-
Specification