Graphene transistor optical detector based on metamaterial structure and application thereof

• US 9,444,002 B2
• Filed: 10/28/2013
• Issued: 09/13/2016
• Est. Priority Date: 01/30/2013
• Status: Active Grant

• Current Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics
• Original Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics
• Inventors: Chen, Qin, Song, Shichao
• Primary Examiner(s): Shamsuzzaman, Mohammed
• Application Number:
  US14/761,907
• Publication Number:
  US 20150357504A1
• Time in Patent Office: 1,051 Days
• Field of Search: 257/27, 257/24, 257/288, 438/99, 435/5
• US Class Current: 1/1
• CPC Class Codes: H01L 27/146 Imager structures
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H01L 29/42372 characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out H01L29/42324 takes precedence
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1136 the device being a metal-insulator-semiconductor field-effect transistor
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A graphene transistor optical detector based on a metamaterial structure and an application thereof. The optical detector includes a substrate, a gate metal layer, a gate medium layer, a graphene layer, a source and drain metal layer successively arranged from bottom to top, wherein a local region of at least the source and drain metal layer has a periodic micro/nanostructure, the periodic micro/nanostructure being matched with the gate metal layer and the gate medium layer to form a metamaterial structure having a complete absorption characteristic. By changing the refractive index, thickness or the like of material for the periodic micro/nanostructure and the gate medium layer, a light absorption frequency band of the metamaterial structure can be regulated. The optical detector provided by the present invention has higher flexibility and narrow-band response, and can work under visible light to infrared even longer wavebands by selecting different metamaterial structures.

Claims

1. A graphene transistor optical detector based on a metamaterial structure, comprising:

a substrate;

a gate metal layer disposed above the substrate;

a gate medium layer disposed above the gate metal layer;

a graphene layer disposed above the gate medium layer;

a source metal layer with a first plurality of orthogonal protrusions disposed above the graphene layer;

a drain metal layer with a second plurality of orthogonal protrusions disposed above the graphene layer and away from the first plurality of orthogonal protrusions,

wherein the first plurality of orthogonal protrusions and the second plurality of orthogonal protrusions are crossed with each other to form a two-dimensional periodic structure, which together with the graphene layer, the gate metal layer and the gate medium layer to form a metamaterial structure having an absorption characteristic with absorption rates to electromagnetic waves in different polarization directions are same, while orthogonal protrusions of the source metal layer and the drain metal layer on the substrate overlap with orthogonal protrusion of the gate metal layer on the substrate; and

wherein an impedance Z of the metamaterial structure is equal to or a vacuum impedance of 376.7Ω

, wherein Z=(μ

/∈

)^1/2, where ∈ and

μ

denotes a dielectric constant and a magnetic permeability of the metamaterial structure, respectively.

2. The graphene transistor optical detector based on the metamaterial structure according to claim 1, characterized in that a lower end face of the source metal layer and drain metal layer comes into contact with the graphene layer to form a conductive channel for connecting the source metal layer and the drain metal layer of the transistor.

3. The graphene transistor optical detector based on the metamaterial structure according to claim 1, characterized in that t-he a thickness of the source metal layer and drain metal layer is 20-200 nm.

4. The graphene transistor optical detector based on the metamaterial structure according to claim 1, characterized in that a thickness of the gate metal layer is equal to or larger than 50 nm.

5. The graphene transistor optical detector based on the metamaterial structure according to claim 1, characterized in that the gate medium layer is made of low-light-absorption dielectric material including silicon oxide, silicon nitride or aluminum oxide.

6. The graphene transistor optical detector based on the metamaterial structure according to claim 1, characterized in that the graphene layer is selected from single-layer graphene or multi-layer (less than or equal to 10 layers) graphene.

7. An image sensing device or a spectrum detecting and analyzing device, comprising a plurality of the graphene transistor optical detectors based on a metamaterial structure according to claim 1, which are distributed in an array.