Group-III nitride compound semiconductor light emitting element, manufacturing method therefor and semiconductor light emitting device

• US 9,444,009 B2
• Filed: 09/16/2013
• Issued: 09/13/2016
• Est. Priority Date: 09/20/2012
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Hirata, Koji, Kamiya, Masao, Goshonoo, Koichi, Totani, Shingo, Kawai, Takashi, Mori, Takahiro
• Primary Examiner(s): Ingham, John C
• Assistant Examiner(s): MAZUMDER, DIDARUL A
• Application Number:
  US14/028,379
• Publication Number:
  US 20140077219A1
• Time in Patent Office: 1,093 Days
• Field of Search: 257/76, 438/105, 438/931
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0243 Surface structure
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A group-III nitride compound semiconductor light emitting element includes a substrate that has a main face on which an concave and convex portion is formed, a group-III nitride compound semiconductor layer that is formed on the main face of the substrate, and a clearance that is formed between the substrate and the group-III nitride compound semiconductor layer at a first region of the semiconductor light emitting element. In the first region, a portion of the group-III nitride compound semiconductor layer and a portion of the clearance are disposed in a concave of the concave and convex portion on a section through two adjacent top portions of the concave and convex portion and a bottom portion located between the adjacent top portions.

Claims

1. A group-III nitride compound semiconductor light emitting element comprising:

a substrate that has a main face on which a concave and convex portion is formed;

a group-III nitride compound semiconductor layer that is formed on the main face of the substrate; and

a clearance that is formed between the substrate and the group-III nitride compound semiconductor layer at a first region of the semiconductor light emitting element,

wherein, in the first region, a portion of the group-III nitride compound semiconductor layer and a portion of the clearance are disposed in a concave of the concave and convex portion on a section through two adjacent top portions of the concave and convex portion and a bottom portion located between the adjacent top portions,

wherein, in the first region, the group-III nitride compound semiconductor layer includes a concave portion that is concave away from the substrate,

wherein an apex of a convex of the concave and convex portion is centrally aligned with a vertex of the concave portion of the group-III nitride compound semiconductor layer, and

wherein the apex of the convex of the concave and convex portion of the substrate is shifted in a direction perpendicular to a stacking direction of the substrate and the semiconductor layer from a positon where the apex of the convex of the concave and convex portion is aligned with an apex of the group-III nitride compound semiconductor layer in the stacking direction.

2. The group-III nitride compound semiconductor light emitting element according to claim 1, wherein, in the first region, the group-III nitride compound semiconductor layer includes a convex portion that is convex toward the substrate, and

the convex portion is disposed at a position facing to a bottom portion of a concave of the concave and convex portion.

3. The group-III nitride compound semiconductor light emitting element according to claim 2,

wherein a vertex of the convex portion of the group-III nitride compound semiconductor layer is disposed in the concave of the concave and convex portion on the section through the two adjacent top portions of the concave and convex portion and the bottom portion located between the adjacent top portions.

4. The group-III nitride compound semiconductor light emitting element according to claim 1, further comprising voids that are formed in at least a portion between the substrate and the group-III nitride compound semiconductor layer at a second region of the semiconductor light emitting element.

5. The group-III nitride compound semiconductor light emitting element according to claim 4,

wherein the clearance is formed between the substrate and the group-III nitride compound semiconductor layer at a third region of the semiconductor light emitting element, and

in the third region, a portion of the clearance is disposed in the concave of the concave and convex portion on the section through the two adjacent top portions of the concave and convex portion and the bottom portion located between the adjacent top portions.

6. The group-III nitride compound semiconductor light emitting element according to claim 5, wherein the first region is disposed between the second region and the third region.

7. The group-III nitride compound semiconductor light emitting element according to claim 1,

wherein the group-III nitride compound semiconductor layer includes a buffer layer at a position facing the substrate, the buffer layer having an concave and convex shape along the concave and convex portion, and

the buffer layer includes AlN.

8. A semiconductor light emitting device comprising:

the group-III nitride compound semiconductor light emitting element described in claim 1;

a case that accommodates the group-III nitride compound semiconductor light emitting element in a concave portion of the case; and

a sealing resin that fills the concave portion.

9. The semiconductor light emitting device according to claim 8, wherein the sealing resin fills the clearance.

10. The group-III nitride compound semiconductor light emitting element according to claim 4, a boundary between the first region and the second region is in a range of 5 μ

m or more but 50 μ

m or less from an end of the semiconductor layer.

11. The group-III nitride compound semiconductor light emitting element according to claim 1, wherein the clearance at a given position becomes wider as the given position is closer to an outer edge of the substrate.

12. The group-III nitride compound semiconductor light emitting element according to claim 1, wherein a width of the clearance continuously increases from an inner end of the first region to an end of the semiconductor layer, the inner end being the closest portion of the first region to a center of the substrate.

13. The group-III nitride compound semiconductor light emitting element according to claim 1, wherein a center of the apex of the convex of the concave and convex portion and the vertex of the concave portion of the group-III nitride compound semiconductor layer are aligned with each other in a direction parallel to a stacking direction of the substrate and the group-III nitride compound semiconductor layer.

14. The group-III nitride compound semiconductor light emitting element according to claim 1, wherein the apex of the group-III nitride compound semiconductor layer includes a sharp end.

15. A group-HI nitride compound semiconductor light emitting element comprising:

a substrate that has a main face on which an concave and convex portion is formed;

a group-III nitride compound semiconductor layer that is formed on the main face of the substrate; and

a clearance that is formed between the substrate and the group-III nitride compound semiconductor layer at a first region of the semiconductor light emitting element,

wherein, in the first region, a portion of the group-III nitride compound semiconductor layer and a portion of the clearance are disposed in a concave of the concave and convex portion on a section through two adjacent top portions of the concave and convex portion and a bottom portion located between the adjacent top portions,

wherein the concave and convex portion of the substrate includes a slant surface that is in a range of 40°

or more but 80°

or less to the main surface of the substrate, and

wherein an apex of a convex of the concave and convex portion of the substrate is shifted in a direction perpendicular to a stacking direction of the substrate and the semiconductor layer from a positon where the apex of the convex of the concave and convex portion is centrally aligned with an apex of the group-III nitride compound semiconductor layer in the stacking direction.

16. The group-III nitride compound semiconductor light emitting element according to claim 15, wherein the apex of the group-III nitride compound semiconductor layer includes a sharp end.