Thermoelectrical device and method for manufacturing same

• US 9,444,027 B2
• Filed: 10/04/2011
• Issued: 09/13/2016
• Est. Priority Date: 10/04/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Dibra, Donald
• Primary Examiner(s): Michener, Jennifer
• Assistant Examiner(s): Danicic, Christopher
• Application Number:
  US13/252,271
• Publication Number:
  US 20130081662A1
• Time in Patent Office: 1,806 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 23/38 Cooling arrangements using the Peltier effect
• CPC Class Codes: H10N 10/01 Manufacture or treatment
• CPC Class Codes: H10N 10/17 characterised by the structure or configuration of the cell or thermocouple forming the device
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Abstract

A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate.

Claims

1. A method for manufacturing a thermoelectrical device, the method comprising:

providing a substrate;

forming at least one deep trench comprising a cavity into the substrate, after providing the substrate; and

forming at least one thermocouple which comprises two conducting paths after forming the deep trench, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate;

wherein the two conducting paths are directly electrically connected at the bottom of the deep trench by a material-junction of the two conducting paths, and wherein the two conducting paths are isolated from each other along the deep trench with exception of the material-junction, and wherein the material-junction comprises an interface wherein a surface of the first conducting path is in direct contact with a surface of the second conducting path;

wherein forming the thermocouple is performed such that the first and the second conducting path are embedded in the deep trench and such that the second conducting path is surrounded by the first conducting path;

wherein the two conducting paths are isolated by an insulating layer along a length of at least one of the two conducting paths and the two conducting paths are electrically connected at an end portion of one of the two conducting paths residing at a bottom portion of the deep trench.

2. The method for manufacturing the thermoelectrical device according to claim 1, wherein forming the deep trench is performed such that a ratio of a depth and a diameter of the deep trench is larger than 5:

1.

3. The method for manufacturing the thermoelectrical device according to claim 1, wherein forming the deep trench comprises etching into the substrate such that the deep trench extends from a first main surface of the substrate over at least 90% of a thickness of the substrate.

4. The method for manufacturing the thermoelectrical device according to claim 1, wherein forming the at least one thermocouple comprises:

depositing an insulating layer in the deep trench; and

depositing or filling at least the first conductive material into the deep trench after depositing the insulating layer.

5. The method for manufacturing the thermoelectrical device according to claim 3, further comprising:

etching a second main surface of the substrate opposite the first main surface such that the first and second conducting paths are exposed at the second main surface; and

arranging a metal connection pad for electrically connecting the two conducting paths at the second main surface.

6. The method for manufacturing the thermoelectrical device according to claim 5, the method further comprising forming a further deep trench into the substrate such that the further deep trench extends over an entire thickness of the substrate;

and

wherein forming the thermocouple comprises embedding the second conducting path in the further deep trench of the substrate.

7. The method for manufacturing the thermoelectrical device according to claim 1, the method further comprising:

forming a plurality of said deep trenches; and

etching a second main surface of the substrate opposite the first main surface such that an opening is laterally arranged between at least two of the plurality of deep trenches.

8. The method for manufacturing the thermoelectrical device according to claim 7, further comprising filling the opening with a material that has a reduced thermal conductivity when compared to a thermal conductivity of the substrate.

9. The method for manufacturing the thermoelectrical device according to claim 1, further comprising:

forming a plurality of said deep trenches;

forming a plurality of said thermocouples associated, respectively, with the plurality of deep trenches; and

electrically connecting at least two thermocouples together in series.

10. The method for manufacturing the thermoelectrical device according to claim 1, further comprising arranging an infrared absorbing layer on the first main surface or on a second opposing main surface of the substrate such that a thermoelectrical sensor is formed.

11. The method for manufacturing the thermoelectrical device according to claim 10, further comprising:

forming a plurality of said deep trenches;

forming a plurality of said thermocouples comprising the infrared absorbing layer associated, respectively, with the plurality of deep trenches; and

separating the plurality of thermocouples by at least one additional deep trench extending from the first main surface such that one or more pixels of the infrared sensor are formed.

12. The method for manufacturing the thermoelectrical device according to claim 1, further comprising arranging an integrated circuit on the first main surface or on a second opposing main surface of the substrate of the thermoelectrical device.

13. The method for manufacturing the thermoelectrical device according to claim 1, further comprising arranging a further thermoelectrical device on the first main surface or on a second opposing main surface of the substrate.

14. The method of claim 1,

wherein the substrate comprises an integrated contiguous substrate of a single material, and

wherein forming the at least one deep trench into the substrate comprises selectively removing portions of the material of the substrate.

15. The method of claim 1, wherein forming the at least one thermocouple comprises:

depositing a first insulating layer in the deep trench;

depositing the first conductive material into the deep trench after depositing the first insulating layer;

depositing a second insulating layer into the deep trench after depositing the first conductive material;

depositing or filling the deep trench with the second conductive material; and

electrically connecting the first conductive material and the second conductive material.

16. A method for manufacturing a thermoelectrical device, the method comprising:

providing a substrate;

forming at least one deep trench into the substrate; and

forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate;

wherein the two conducting paths are directly electrically connected at the bottom of the deep trench by a material-junction of the two conducting paths, and wherein the two conducting paths are isolated from each other along the deep trench with exception of the material-junction, and wherein the material-junction comprises an interface wherein a surface of the first conducting path is in direct contact with a surface of the second conducting path;

wherein forming the thermocouple is performed such that the first and the second conducting path are embedded in the deep trench and such that the second conducting path is surrounded by the first conducting path;

wherein the two conducting paths are isolated by an insulating layer along a length of one of the conducting paths and the two conducting paths are electrically connected at an end portion of the one of the conducting paths residing at a bottom portion of the deep trench;

wherein forming the at least one thermocouple comprises;

depositing an insulating layer in the deep trench; and

depositing or filling at least the first conductive material into the deep trench after depositing the insulating layer.