Display substrate, manufacturing method thereof and flexible display device

• US 9,444,061 B2
• Filed: 05/21/2014
• Issued: 09/13/2016
• Est. Priority Date: 10/12/2013
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Shi, Ling, Li, Yunfei, Nagayama, Kazuyoshi
• Primary Examiner(s): YUSHIN, NIKOLAY K
• Application Number:
  US14/403,709
• Publication Number:
  US 20150303388A1
• Time in Patent Office: 846 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

The invention provides a display substrate, a manufacturing method thereof and a flexible display device. The display substrate in the present invention includes a base substrate and a vulnerable member arranged on the base substrate, as well as a stress absorption layer arranged between the base substrate and the vulnerable member, wherein the projection of the vulnerable member on the base substrate is within the projection region of the stress absorption layer on the base substrate; the stress absorption layer is not arranged on part of the base substrate. Since the display substrate and the flexible display device provided by the present invention are provided with the stress absorption layer, stress generated during bending may be dispersed through the stress absorption layer to protect the vulnerable member from being damaged, so as to improve the reliability of the display substrate and the flexible display device.

Claims

1. A display substrate, comprising:

a flexible base substrate and a vulnerable member arranged on the flexible base substrate, wherein

the display substrate further comprises a patterned stress absorption layer arranged between the flexible base substrate and the vulnerable member so that the patterned stress absorption layer is only arranged below the vulnerable member; and

the projection of the vulnerable member on the flexible base substrate is within the projection region of the patterned stress absorption layer on the flexible base substrate;

wherein the patterned stress absorption layer is arranged above the flexible base substrate by depositing a material layer of the stress absorption layer by adopting a plasma enhanced chemical vapor deposition method, and performing a patterning process on the material layer by adopting a mask plate corresponding to the shape of the vulnerable member to form the patterned stress absorption layer.

2. The display substrate of claim 1, wherein the vulnerable member comprises one or more of a thin film transistor, a gate line and a data line.

3. The display substrate of claim 1, wherein the flexible base substrate comprises one of a polyimide base substrate, a polyethylene glycol terephthalate base substrate and a stainless steel base substrate.

4. The display substrate of claim 1, wherein the thickness of the patterned stress absorption layer is in the range of 200 nm-400 nm, and/or the material of the patterned stress absorption layer is silicon nitride or silicon oxide.

5. The display substrate of claim 4, wherein a buffer layer is further arranged between the flexible base substrate and the vulnerable member.

6. A flexible display device, comprising the display substrate of claim 1.

7. The flexible display device of claim 6, wherein the display substrate is a flexible organic light emitting diode display substrate.

8. The display substrate of claim 1, wherein the projection of the vulnerable member on the flexible base substrate coincides with the projection of the patterned stress absorption layer on the flexible base substrate.

9. The display substrate of claim 8, wherein a buffer layer is further arranged between the flexible base substrate and the vulnerable member.

10. The display substrate of claim 8, wherein the thickness of the patterned stress absorption layer is in the range of 200 nm-400 nm, and/or the material of the patterned stress absorption layer is silicon nitride or silicon oxide.

11. The display substrate of claim 10, wherein a buffer layer is further arranged between the flexible base substrate and the vulnerable member.

12. The display substrate of claim 1, wherein a buffer layer is further arranged between the flexible base substrate and the vulnerable member.

13. The display substrate of claim 12, wherein the patterned stress absorption layer is arranged between the buffer layer and the flexible base substrate, and the vulnerable member is arranged on the buffer layer.

14. The display substrate of claim 12, wherein the buffer layer is arranged between the patterned stress absorption layer and the flexible base substrate, and the vulnerable member is arranged on the patterned stress absorption layer.

15. The display substrate of claim 12, wherein the material of the buffer layer is silicon nitride or silicon oxide.

16. A method for manufacturing a display substrate, comprising the following steps:

preparing a base substrate;

arranging a stress absorption layer above the base substrate; and

arranging a vulnerable member above the stress absorption layer,

wherein the projection of the vulnerable member on the base substrate is within the projection region of the stress absorption layer on the base substrate;

wherein the step of arranging the stress absorption layer above the base substrate comprises;

depositing a material layer of the stress absorption layer by adopting a plasma enhanced chemical vapor deposition method, and performing a patterning process on the material layer by adopting a mask plate corresponding to the shape of the vulnerable member to form the pattern of the stress absorption layer.

17. The method of claim 16, wherein the thickness of the stress absorption layer is in the range of 200 nm-400 nm, and/or the material of the stress absorption layer is silicon nitride or silicon oxide.

18. The method of claim 16, further comprising a step of arranging a buffer layer on the base substrate before the step of arranging a stress absorption layer above the base substrate.

19. The method of claim 16, further comprising a step of arranging a buffer layer on the stress absorption layer before the step of arranging the vulnerable member above the stress absorption layer.