Method for performing uniform processing in gas system-sharing multiple reaction chambers

• US 9,447,498 B2
• Filed: 03/18/2014
• Issued: 09/20/2016
• Est. Priority Date: 03/18/2014
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Shiba, Eiichiro
• Primary Examiner(s): Chen, Bret
• Application Number:
  US14/218,374
• Publication Number:
  US 20150267297A1
• Time in Patent Office: 917 Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/448 characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/505 using radio frequency discharges

Abstract

A method for performing uniform processing in multiple reaction chambers includes (a) conducting a cycle constituted by steps in each reaction chamber according to the order of the reaction chambers at which the steps are conducted; and then (b) conducting the steps in each reaction chamber after changing the immediately prior order of the reaction chambers at which the steps are conducted; and then (c) repeating process (b) until a target treatment is complete at the multiple reaction chambers. The target treatment conducted on a substrate in each reaction chamber is the same.

Claims

1. A method for performing uniform processing in multiple reaction chambers sharing a first gas source and a second gas source, each reaction chamber having a gas inlet line through which a first gas from the first gas source, a second gas from the second gas source, and a purge gas are introduced into the reaction chamber, wherein a same target treatment is conducted on a first substrate in a first reaction chamber and on a second substrate in a second reaction chamber, separately, said target treatment being cyclic processing constituted by predetermined times of cycles, wherein one cycle is considered to be complete when one cycle of the target treatment is conducted on the first substrate and the second substrate one time at the respective reaction chambers wherein the one cycle starts at one of the reaction chambers and then starts at another of the reaction chambers before the one cycle ends at the one of the reaction chambers, said complete cycle comprising:

(i) supplying the first gas to the multiple reaction chambers through the respective gas inlet lines in a first supply order where the first gas is supplied to the first reaction chamber and then to the second reaction chamber or in a second supply order where the first gas is supplied to the second reaction chamber and then to the first reaction chamber; and

(ii) supplying the second gas to the multiple reaction chambers through the respective gas inlet lines in a supply order where the second gas is supplied to one of the multiple reaction chambers and to another of the multiple reaction chambers;

wherein the purge gas is supplied to the multiple reaction chambers through the respective gas inlet lines after every supply of the first gas and after every supply of the second gas so as to purge the first gas and the second gas, respectively, from the multiple reaction chambers and the gas inlet lines, wherein steps (i) and (ii) are conducted in a same order in each cycle in each reaction chamber,

wherein the complete cycle is continuously repeated until the predetermined times of cycles of the target treatment are performed in the multiple reaction chambers, wherein the supply order of the first gas is changed between the first supply order and the second supply order every time the complete cycle is repeated.

2. The method according to claim 1, wherein the supply order of the second gas is changed per cycle while the supply order of the first gas is unchanged.

3. The method according to claim 1, wherein the supply order of each of the first gas and the second gas is changed per cycle.

4. The method according to claim 1, wherein one cycle is comprised of steps (i) to (iii), and step (ii) is repeated in the cycle wherein the supply order of the second gas is changed when step (ii) is repeated in the cycle, said cycle being repeated in step (iv).

5. The method according to claim 1, further comprising (iiia) applying RF power in the multiple reaction chambers after every step (iii).

6. The method according to claim 5, wherein RF power is applied to the multiple reaction chambers sequentially or simultaneously.

7. The method according to claim 5, wherein the multiple reaction chambers share an RF generator which generates RF power.

8. The method according to claim 5, wherein the target treatment is deposition of a film by plasma-enhanced atomic layer deposition (PEALD).

9. The method according to claim 1, wherein a supply rate of the first gas is two or more times higher than a supply rate of the second gas.

10. The method according to claim 1, wherein the first gas source and the second gas source include bottles storing liquid compounds, respectively, vaporized gases of which are the first gas and the second gas, respectively.

11. The method according to claim 10, wherein a first gas line from the first gas source is ramified and connected to each of the gas inlet lines of the multiple reaction chambers, and a second gas line from the second gas source is ramified and connected to each of the gas inlet lines of the multiple reaction chambers, wherein the first gas and the purge gas are introduced to the multiple reaction chambers through the first gas line, the lines ramified therefrom, and the gas inlet lines of the multiple reaction chambers, while the second gas and the purge gas are introduced to the multiple reaction chambers through the second gas line, the lines ramified therefrom, and the gas inlet lines of the multiple reaction chambers, wherein each ramified line is provided with a valve, and the gas flows defined in steps (i) to (iii) are controlled using each valve.

12. The method according to claim 11, wherein the purge gas continuously flows alone or with the first gas through the first gas line, while the purge gas continuously flows alone or with the second gas through the second gas line.

13. The method according to claim 1, wherein the multiple reaction chambers are two reaction chambers.

14. The method according to claim 1, wherein the multiple reaction chambers share an exhaust system, and the pressure of each reaction chamber is controlled using the exhaust system.

15. The method according to claim 1, wherein the multiple reaction chambers each comprise another gas line, through which an additive gas or inert gas is supplied to the multiple reaction chambers.