Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery
First Claim
1. A faceplate for use in semiconductor processing showerhead, the faceplate comprising:
- a volume with an outer surface, a top surface, a bottom surface, and a center axis, wherein the top surface and the bottom surface;
partially bound the volume,are substantially parallel to, and offset from, each other, andare substantially centered on, and normal to, the center axis, andwherein the outer surface at least partially bounds the volume in a radial direction with respect to the center axis;
a plurality of first channels within the volume extending from the outer surface towards the center axis, each first channel having a first end closer to the center axis than a second end of that first channel;
a plurality of first gas distribution holes, each first gas distribution hole fluidly connected within the volume to one or more of the first channels and extending through the bottom surface and not extending through the top surface;
a plurality of second gas distribution holes, each second gas distribution hole extending through the top surface and the bottom surface and not fluidly connected within the volume to the first channels; and
one or more gas distribution channels fluidically connected with the second ends of the plurality of first channels, following a path around substantially all of the second gas distribution holes and around all of the second ends of the first channels, and configured to be fluidically connected with one or more gas feed inlets.
1 Assignment
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Accused Products
Abstract
A dual-plenum showerhead for semiconductor processing operations is provided. The showerhead may include a faceplate with two sets of gas distribution holes, each set fed by a separate plenum. One set of gas distribution holes may be through-holes in the faceplate of the showerhead and may allow gases trapped between the faceplate and a plasma dome to flow towards a wafer. The other set of gas distribution holes may distribute gas routed through passages or channels in the faceplate towards the wafer. The passages or channels in the faceplate may include radial channels and annular channels and may be fed from an annular gas distribution channel about the periphery of the faceplate.
45 Citations
19 Claims
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1. A faceplate for use in semiconductor processing showerhead, the faceplate comprising:
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a volume with an outer surface, a top surface, a bottom surface, and a center axis, wherein the top surface and the bottom surface; partially bound the volume, are substantially parallel to, and offset from, each other, and are substantially centered on, and normal to, the center axis, and wherein the outer surface at least partially bounds the volume in a radial direction with respect to the center axis; a plurality of first channels within the volume extending from the outer surface towards the center axis, each first channel having a first end closer to the center axis than a second end of that first channel; a plurality of first gas distribution holes, each first gas distribution hole fluidly connected within the volume to one or more of the first channels and extending through the bottom surface and not extending through the top surface; a plurality of second gas distribution holes, each second gas distribution hole extending through the top surface and the bottom surface and not fluidly connected within the volume to the first channels; and one or more gas distribution channels fluidically connected with the second ends of the plurality of first channels, following a path around substantially all of the second gas distribution holes and around all of the second ends of the first channels, and configured to be fluidically connected with one or more gas feed inlets. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification