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Wet etching methods for copper removal and planarization in semiconductor processing

  • US 9,447,505 B2
  • Filed: 06/04/2015
  • Issued: 09/20/2016
  • Est. Priority Date: 10/05/2005
  • Status: Active Grant
First Claim
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1. An apparatus for wet chemical etching comprising:

  • (a) a substrate holder configured to hold and rotate a semiconductor substrate;

    (b) a first nozzle configured to apply a liquid etchant to a working surface of the semiconductor substrate, wherein the first nozzle is configured to be radially movable during treatment of the semiconductor substrate;

    (c) a second nozzle configured to apply a liquid quenchant to the surface of the semiconductor substrate, wherein the first nozzle and the second nozzle are proximate to each other during treatment of the semiconductor substrate, wherein the second nozzle is configured to be radially movable during treatment of the semiconductor substrate, and wherein the second nozzle is configured to be positioned at a more radially outward location than the first nozzle during treatment of the semiconductor substrate, and(d) a chemical wet etch endpoint detector,wherein the apparatus is configured to establish a treating area said treating area less than the total area of the working surface of the semiconductor substrate and comprising that portion of the semiconductor substrate contacted by the liquid etchant but not also contacted by the liquid quenchant.

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