Direct liquid-contact micro-channel heat transfer devices, methods of temperature control for semiconductive devices, and processes of forming same

• US 9,448,278 B2
• Filed: 06/22/2015
• Issued: 09/20/2016
• Est. Priority Date: 11/06/2009
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Acikalin, Tolga, Schroeder, Christopher R., Ackerman, Christopher W., Shipley, James C., Sauciuc, Ioan, Rutigliano, Michael L., Maveety, James G., Gupta, Ashish
• Primary Examiner(s): Hollington, Jermele M
• Assistant Examiner(s): MCANDREW, CHRISTOPHER P
• Application Number:
  US14/746,764
• Publication Number:
  US 20150285857A1
• Time in Patent Office: 456 Days
• Field of Search: 361/688, 361/689, 361/699, 324/765, 324/629
• US Class Current: 1/1
• CPC Class Codes: F28F 3/12 Elements constructed in the shape of a hollow panel, e.g. with channels F28D1/02, F28D1/03 take precedence
• CPC Class Codes: G01R 31/2642 Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
• CPC Class Codes: G01R 31/2875 related to heating
• CPC Class Codes: G06F 1/20 Cooling means
• CPC Class Codes: G06F 2200/201 Cooling arrangements using cooling fluid
• CPC Class Codes: H01L 23/467 by flowing gases, e.g. air H01L23/473 takes precedence
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An apparatus to test a semiconductive device includes a base plane that holds at least one heat-transfer fluid unit cell. The at least one heat-transfer fluid unit cell includes a fluid supply structure including a supply-orifice cross section as well as a fluid return structure including a return-orifice cross section. The supply-orifice cross section is greater than the return-orifice cross section. A die interface is also included to be a liquid-impermeable material.

Claims

1. An apparatus including a direct fluid-contact thermal block to temperature-control a semiconductive device, comprising:

a first laminate type including a plurality of unit block perimeters;

a base plane second laminate type, wherein the base plane second laminate type includes at least one heat-transfer fluid unit cell, the at least one heat-transfer fluid unit cell including;

a fluid supply structure including a supply-orifice cross-sectional area; and

a fluid return structure including a return-orifice cross-sectional area, wherein the supply-orifice cross-sectional area is greater than the return-orifice cross-sectional area;

a third laminate type including fluid-supply distributors coupled to the fluid supply structure, and fluid-return collectors coupled to the fluid return structure;

a fourth laminate type including fluid supply- and return routers, respectively, that couple to the respective fluid supply- and return distributors and collectors;

a fifth laminate type includes fluid supply- and return plenums, respectively, that couple to the respective fluid supply- and return routers; and

a sixth laminate type including a top plane of the direct fluid-contact thermal block and including supply-fluid inlets and return-fluid outlets, respectively, that are coupled to the respective fluid supply- and return plenums;

wherein

the first laminate type is 5 mils (thousandths of an inch) thick and is a single layer;

the base plane second laminate type includes a fluid-flow array of 120 unit cells defined by a 24 unit-cell dimension along an X-axis and a five unit-cell dimension along a Y-axis, and wherein the base plane second laminate type is 5 mils thick and includes a total of 4 layers;

the third laminate type is 10 mils thick and includes a total of nine layers;

the fourth laminate type is 10 mils thick and includes a total of nine layers;

the fifth laminate type is 10 mils thick and includes a total of five layers; and

the sixth laminate type is 10 mils thick and includes a total of two layers.

2. The apparatus of claim 1, wherein the laminate types comprise stainless steel.

3. The apparatus of claim 1, wherein the laminate types comprise ceramic material.

4. The apparatus of claim 1, wherein the laminate types comprise polymeric material.

5. The apparatus of claim 1, wherein at least one of the laminate types includes resistive heating traces coupled thereto.

6. The apparatus of claim 1, further comprising a chiller.

7. An apparatus including a direct fluid-contact thermal block to temperature-control a semiconductive device, comprising:

a first laminate type including a plurality of unit block perimeters;

a second laminate type includes a fluid supply structure comprising a plurality of fluid supply-orifices and a fluid return structure comprising a plurality of fluid return-orifices, the fluid supply structure and the fluid return structure configured to include a greater number of fluid supply-orifices than fluid return-orifices;

a third laminate type including fluid-supply distributors coupled to the fluid supply structure, and fluid-return collectors coupled to the fluid return structure;

a fourth laminate type including fluid supply- and return routers, respectively, that couple to the respective fluid supply- and return distributors and collectors;

a fifth laminate type includes fluid supply- and return plenums, respectively, that couple to the respective fluid supply- and return routers; and

a sixth laminate type including an upper layer of the direct fluid-contact thermal contact block and including supply-fluid inlets and return-fluid outlets, respectively, that are coupled to the respective fluid supply- and return plenums;

wherein the first laminate type is 5 mils thick and is a single layer;

wherein the second laminate type is 5 mils thick and includes a total of four layers;

wherein the third laminate type is 10 mils thick and includes a total of nine layers;

wherein the fourth laminate type is 10 mils thick and includes a total of nine layers;

wherein the fifth laminate type is 10 mils thick and includes a total of five layers; and

wherein the sixth laminate type is 10 mils thick and includes a total of two layers.

8. The apparatus of claim 7, wherein the fluid supply structure includes twice as many fluid supply-orifices as fluid return-orifices.

9. The apparatus of claim 7, wherein the second laminate type includes a planar surface including a plurality of heat-transfer fluid unit cells, the fluid supply-orifices and the fluid return-orifices positioned in the plurality of heat-transfer fluid unit cells, the plurality of heat-transfer fluid unit cells each including two supply orifices and a single return orifice therein.

10. The apparatus of claim 9, wherein the second laminate type includes a fluid-flow array of 120 unit cells defined by a 24 unit-cell dimension along an X-axis and a five unit-cell dimension along a Y-axis.

11. The apparatus of claim 7, wherein the laminate types comprise stainless steel.

12. The apparatus of claim 7, wherein the laminate types comprise ceramic material.

13. The apparatus of claim 7, wherein the laminate types comprise polymeric material.

14. The apparatus of claim 7, wherein at least one of the laminate types includes resistive heating traces coupled thereto.

15. An apparatus including a plurality of layers laminated together to form a direct fluid-contact thermal block configured to temperature-control a semiconductive device, comprising:

a first laminate type including a first surface;

a second laminate type including fluid-supply orifices and fluid-return orifices arranged in a fluid-flow array of unit cells, the unit cells each including two fluid-supply orifices and a single fluid-return orifice positioned between the two fluid-supply orifices;

a third laminate type including fluid-supply distributors in communication with the fluid-supply orifices, and fluid-return distributors in communication with the fluid-return orifices;

a fourth laminate type including fluid-supply routers in communication with the fluid-supply distributors, and fluid-return routers in communication with the fluid-return distributors;

a fifth laminate type including fluid-supply plenums in communication with the fluid-supply routers, and fluid-return plenums in communication with the fluid-return routers; and

a sixth laminate type including supply-fluid inlets in communication with the fluid-supply plenums, and return-fluid outlets in communication with the fluid-return plenums;

wherein the first laminate type is 5 mils thick and is a single layer;

wherein the second laminate type is 5 mils thick and includes a total of four layers;

wherein the third laminate type is 10 mils thick and includes a total of nine layers;

wherein the fourth laminate type is 10 mils thick and includes a total of nine layers;

wherein the fifth laminate type is 10 mils thick and includes a total of five layers; and

wherein the sixth laminate type is 10 mils thick and includes a total of two layers.

16. The apparatus of claim 15, wherein the laminate types comprise stainless steel.

17. The apparatus of claim 15, wherein the laminate types comprise ceramic material.

18. The apparatus of claim 15, wherein the laminate types comprise polymeric material.