Semiconductor device
First Claim
1. A method for manufacturing an oxide semiconductor film and an oxide film, comprising:
- forming an oxide semiconductor film;
forming an oxide film over the oxide semiconductor film; and
etching the oxide semiconductor film and the oxide film by an etchant comprising a phosphoric acid,wherein each of the oxide film and the oxide semiconductor film comprises an In-M-Zn oxide (M is one selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Nd), and the oxide film has a lower atomic ratio of In to M than the oxide semiconductor film.
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Accused Products
Abstract
A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.
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Citations
17 Claims
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1. A method for manufacturing an oxide semiconductor film and an oxide film, comprising:
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forming an oxide semiconductor film; forming an oxide film over the oxide semiconductor film; and etching the oxide semiconductor film and the oxide film by an etchant comprising a phosphoric acid, wherein each of the oxide film and the oxide semiconductor film comprises an In-M-Zn oxide (M is one selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Nd), and the oxide film has a lower atomic ratio of In to M than the oxide semiconductor film. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing an oxide semiconductor film and an oxide film, comprising:
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forming a first oxide semiconductor film; forming a first oxide film over the first oxide semiconductor film; and etching the first oxide semiconductor film and the first oxide film by an etchant comprising a phosphoric acid so as to form a second oxide semiconductor film and a second oxide film over the second oxide semiconductor film, wherein each of the first oxide film and the first oxide semiconductor film comprises an In-M-Zn oxide (M is one selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Nd), and the first oxide film has a lower atomic ratio of In to M than the first oxide semiconductor film, wherein the second oxide semiconductor film has a first angle formed between a bottom surface of the second oxide semiconductor film and a side surface of the second oxide semiconductor film, and wherein the second oxide film has a second angle formed between a bottom surface of the second oxide film and a side surface of the second oxide film, the second angle being greater than the first angle and being greater than or equal to 10° and
less than 90°
. - View Dependent Claims (6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device, comprising:
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forming a transistor, the transistor comprising; an oxide semiconductor film comprising a channel formation region; an oxide film over the oxide semiconductor film; and a conductive film over the oxide semiconductor film and the oxide film, the conductive film being in contact with a side surface of the oxide semiconductor film and a side surface of the oxide film, forming an insulating film over the oxide semiconductor film, the oxide film, and the conductive film, and forming an electrode over the insulating film, the electrode being electrically connected to the oxide semiconductor film through the conductive film, wherein each of the oxide film and the oxide semiconductor film comprises an In-M-Zn oxide (M is one selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Nd), and the oxide film has a lower atomic ratio of In to M than the oxide semiconductor film, wherein the oxide semiconductor film has a first angle formed between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film, and wherein the oxide film has a second angle formed between a bottom surface of the oxide film and a side surface of the oxide film, the second angle being greater than the first angle and being greater than or equal to 10° and
less than 90°
. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification