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Semiconductor device

  • US 9,449,819 B2
  • Filed: 10/08/2015
  • Issued: 09/20/2016
  • Est. Priority Date: 11/16/2012
  • Status: Active Grant
First Claim
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1. A method for manufacturing an oxide semiconductor film and an oxide film, comprising:

  • forming an oxide semiconductor film;

    forming an oxide film over the oxide semiconductor film; and

    etching the oxide semiconductor film and the oxide film by an etchant comprising a phosphoric acid,wherein each of the oxide film and the oxide semiconductor film comprises an In-M-Zn oxide (M is one selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Nd), and the oxide film has a lower atomic ratio of In to M than the oxide semiconductor film.

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