Integrated passive devices
First Claim
1. An intermediate structure for a semiconductor device, comprising:
- a first substrate;
a first insulating layer formed over the substrate including a first trench;
an integrated passive device disposed over the first insulating layer;
a second insulating layer disposed over the integrated passive device and first substrate including a second trench aligned with the first trench;
a conductive layer formed over the second insulating layer;
a third insulating layer formed over the second insulating layer and conductive layer;
an insulating material disposed continuously in the first trench and the second trench with the first trench and second trench being devoid of conductive material;
a second substrate disposed over the third insulating layer; and
a non-conductive adhesive layer disposed between the third insulating layer and the second substrate.
5 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device has integrated passive circuit elements. A first substrate is formed on a backside of the semiconductor device. The passive circuit element is formed over the insulating layer. The passive circuit element can be an inductor, capacitor, or resistor. A passivation layer is formed over the passive circuit element. A carrier is attached to the passivation layer. The first substrate is removed. A non-silicon substrate is formed over the insulating layer on the backside of the semiconductor device. The non-silicon substrate is made with glass, molding compound, epoxy, polymer, or polymer composite. An adhesive layer is formed between the non-silicon substrate and insulating layer. A via is formed between the insulating layer and first passivation layer. The carrier is removed. An under bump metallization is formed over the passivation layer in electrical contact with the passive circuit element. A solder bump is formed on the under bump metallization.
77 Citations
18 Claims
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1. An intermediate structure for a semiconductor device, comprising:
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a first substrate; a first insulating layer formed over the substrate including a first trench; an integrated passive device disposed over the first insulating layer; a second insulating layer disposed over the integrated passive device and first substrate including a second trench aligned with the first trench; a conductive layer formed over the second insulating layer; a third insulating layer formed over the second insulating layer and conductive layer; an insulating material disposed continuously in the first trench and the second trench with the first trench and second trench being devoid of conductive material; a second substrate disposed over the third insulating layer; and a non-conductive adhesive layer disposed between the third insulating layer and the second substrate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An intermediate structure for a semiconductor device, comprising:
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a first substrate; an integrated passive device disposed over the first substrate; a first insulating layer disposed over the integrated passive device and first substrate, the first insulating layer including a first trench; a second insulating layer disposed between the first insulating layer and first substrate, the second insulating layer including a second trench aligned with the first trench, the first trench and second trench being devoid of conductive material; an interconnect structure formed over the first insulating layer; an adhesive layer including resin deposited over the interconnect structure; and a second substrate disposed over the adhesive layer. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. An intermediate structure for a semiconductor device, comprising:
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a non-silicon substrate including a material; a first insulating layer formed over the non-silicon substrate including a trench in the first insulating layer, the trench filled entirely with a material same as the material of the non-silicon substrate; an integrated passive device disposed over the first insulating layer; a second insulating layer disposed over the integrated passive device and non-silicon substrate; a conductive layer formed over the second insulating layer; a third insulating layer formed over the first insulating layer and conductive layer; and an adhesive layer completely covering a surface of the third insulating layer. - View Dependent Claims (15, 16, 17, 18)
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Specification