Semiconductor device and IC card

• US 9,449,999 B2
• Filed: 09/21/2011
• Issued: 09/20/2016
• Est. Priority Date: 03/04/2004
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Jahan, Bilkis
• Application Number:
  US13/238,763
• Publication Number:
  US 20120007096A1
• Time in Patent Office: 1,826 Days
• Field of Search: 257/679, 257/E23.064, 257/E23.176, 257/923, 257/53, 257/64, 257/83, 257/84
• US Class Current: 1/1
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/0728 the arrangement being an optical or sound-based communication interface
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/145 at least one of the further markings being adapted for galvanic or wireless sensing, e.g. an RFID tag with both a wireless and an optical interface or memory, or a contact type smart card with ISO 7816 contacts and an optical interface or memory
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 31/147 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: Y10S 257/923 with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio

Abstract

The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit.

Claims

1. A semiconductor device comprising:

a conductive layer configured to generate an alternating voltage based on a received radio wave;

a light-receiving element configured to receive a first optical signal and generate a first electrical signal;

a circuit comprising a power supply circuit configured to generate a power supply voltage from the alternating voltage, the circuit being configured to generate a second electrical signal from the first electrical signal transmitted from the light-receiving element;

a light-emitting element configured to receive the second electrical signal transmitted from the circuit and generate a second optical signal; and

a display device electrically connected to the circuit,

wherein the light-receiving element and the light-emitting element are not provided in the display device and the circuit.

2. The semiconductor device according to claim 1,

wherein the first optical signal is sent from a reader/writer, and

wherein the second optical signal is sent to the reader/writer.

3. The semiconductor device according to claim 1,

wherein the light-receiving element has a layer for conducting photoelectric conversion using a first non-single crystal thin film, and

wherein the light-emitting element has an electroluminescent layer using a second non-single crystal thin film.

4. The semiconductor device according to claim 1,

wherein the display device, the circuit, the light-emitting element, and the light-receiving element are formed on a first substrate.

5. The semiconductor device according to claim 1,

wherein the display device, the conductive layer, the circuit, the light-emitting element, and the light-receiving element are formed on a first substrate.

6. The semiconductor device according to claim 1, wherein the circuit further comprises a connection terminal, a rectification circuit configured to rectify the alternating voltage generated by the radio wave, a demodulation circuit, and a logic circuit.

7. The semiconductor device according to claim 1,

wherein the circuit, the light-emitting element, and the light-receiving element are attached to a first substrate with an adhesive agent.

8. The semiconductor device according to claim 7, wherein the first substrate is a plastic substrate.

9. A semiconductor device comprising:

a conductive layer configured to generate an alternating voltage based on a received radio wave;

a light-receiving element configured to receive a first optical signal from a reader/writer and generate a first electrical signal;

a circuit including a power supply circuit, the circuit being configured to generate a second electrical signal from the first electrical signal transmitted from the light-receiving element;

a light-emitting element configured to receive the second electrical signal transmitted from the circuit, generate a second optical signal, and send the second optical signal to the reader/writer,

wherein the conductive layer, the light-emitting element, and the light-receiving element are not included in the circuit, and

wherein the circuit, the light-emitting element, and the light-receiving element are attached to a substrate with an adhesive agent.

10. The semiconductor device according to claim 9,

wherein the conductive layer is attached to the substrate with the adhesive agent.

11. The semiconductor device according to claim 10, wherein the circuit further comprises a connection terminal, a rectification circuit configured to rectify the alternating voltage generated by the radio wave, a demodulation circuit, and a logic circuit.

12. An IC card comprising:

a conductive layer configured to generate an alternating voltage based on a received radio wave;

a light-receiving element configured to receive a first optical signal sent from a reader/writer and generate a first electrical signal;

a circuit including a power supply circuit configured to generate a power supply voltage from the alternating voltage generated by the conductive layer, the circuit being configured to generate a second electrical signal from the first electrical signal transmitted from the light-receiving element; and

a light-emitting element configured to receive the second electrical signal transmitted from the circuit and send a second optical signal to the reader/writer,

wherein the conductive layer, the light-emitting element, and the light-receiving element are not provided in the circuit.

13. The IC card according to claim 12, wherein the conductive layer, the circuit, the light-emitting element and the light-receiving element are formed on a first substrate.

14. The IC card according to claim 12, wherein the circuit further comprises a connection terminal, a rectification circuit configured to rectify the alternating voltage generated by the radio wave, a demodulation circuit, and a logic circuit.

15. The IC card according to claim 12, wherein the circuit, the light-emitting element and the light-receiving element are attached to a first substrate with an adhesive agent.

16. The IC card according to claim 15, wherein the first substrate is a plastic substrate.

17. The IC card according to claim 12, further comprising a display portion electrically connected to the circuit.

18. The IC card according to claim 17, wherein, the display portion, the conductive layer, the circuit, the light-emitting element, and the light-receiving element are formed on a first substrate.

19. The IC card according to claim 18, wherein the first substrate is a plastic substrate.