Active matrix light-emitting device with overlapping electroluminescent layers

• US 9,450,030 B2
• Filed: 07/07/2014
• Issued: 09/20/2016
• Est. Priority Date: 12/28/2001
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Hamatani, Toshiji, Takayama, Toru
• Primary Examiner(s): Dickey, Thomas L
• Application Number:
  US14/324,331
• Publication Number:
  US 20140319499A1
• Time in Patent Office: 806 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/125 specially adapted for multicolour light emission, e.g. for emitting white light
• CPC Class Codes: H10K 50/13 comprising stacked EL layers within one EL unit
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/17 Passive-matrix OLED displays
• CPC Class Codes: H10K 59/32 Stacked devices having two or more layers, each emitting at different wavelengths
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/353 characterised by the geometrical arrangement of the RGB subpixels
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 59/871 Self-supporting sealing arrangements
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/40 : Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

Claims

1. An active matrix display device comprising:

a substrate;

a first interlayer insulating film over the substrate, the first interlayer insulating film being formed from an inorganic insulating material;

a second interlayer insulating film over the first interlayer insulating film, the second interlayer insulating film being made from an organic insulating material;

a first transistor and a second transistor in a pixel portion, between the substrate and the first interlayer insulating film;

one of a first source electrode and a first drain electrode of the first transistor between the first interlayer insulating film and the second interlayer insulating film, and in a first contact hole formed in the first interlayer insulating film;

a first pixel electrode on the second interlayer insulating film and in a first contact hole formed in the second interlayer insulating film, and in electrical contact with the one of the first source electrode and the first drain electrode;

one of a second source electrode and a second drain electrode of the second transistor between the first interlayer insulating film and the second interlayer insulating film, and in a second contact hole formed in the first interlayer insulating film;

a second pixel electrode on the second interlayer insulating film and in a second contact hole formed in the second interlayer insulating film, and in electrical contact with the one of the second source electrode and the second drain electrode;

a bank made from an organic resin covering an edge of the first pixel electrode, an edge of the second pixel electrode, and the first contact hole formed in the second interlayer insulating film;

a first EL layer on the first pixel electrode and the bank;

a second EL layer on the second pixel electrode and the bank;

a laminate portion formed by an overlap of the first EL layer with the second EL layer;

a third electrode on the first EL layer and on the second EL layer;

a first insulating film over the third electrode; and

a sealing substrate over the first insulating film.

2. The active matrix display device according to claim 1,

wherein the first transistor comprises a gate electrode and a semiconductor layer, and

wherein the gate electrode overlapping the semiconductor layer.

3. The active matrix display device according to claim 1,

wherein the second interlayer insulating film is in direct contact with the one of the first source electrode and the first drain electrode and the one of the second source electrode and the second drain electrode.

4. The active matrix display device according to claim 1,

wherein the second interlayer insulating film is in direct contact with the first interlayer insulating film.

5. The active matrix display device according to claim 1, further comprising:

a second insulating film made from an inorganic material between the second interlayer insulating film and each of the first interlayer insulating film, the one of the first source electrode and the first drain electrode, and the one of the second source electrode and the second drain electrode.

6. The active matrix display device according to claim 1, further comprising:

a first color filter overlapping with the first EL layer;

a second color filter overlapping with the second EL layer;

a shading portion overlapping with the bank and the laminate portion,

wherein the first color filter, the second color filter, and the shading portion are between the substrate and the sealing substrate.

7. The active matrix display device according to claim 1, further comprising:

a first color filter overlapping with the first EL layer;

a second color filter overlapping with the second EL layer; and

a shading portion overlapping with the bank and the laminate portion,

wherein the first color filter, the second color filter, and the shading portion are between the first insulating film and the sealing substrate.

8. The active matrix display device according to claim 1, further comprising:

a first color filter overlapping with the first EL layer;

a second color filter overlapping with the second EL layer; and

a shading portion overlapping with the bank and the laminate portion,

wherein the first color filter, the second color filter, and the shading portion are formed on the sealing substrate.

9. The active matrix display device according to claim 1, further comprising:

a first color filter overlapping with the first EL layer; and

a second color filter overlapping with the second EL layer;

wherein the first color filter and the second color filter are formed on the sealing substrate.

10. The active matrix display device according to claim 1, further comprising a space between the first EL layer and the sealing substrate.

11. The active matrix display device according to claim 1, further comprising:

a gate side driver circuit adjacent to the pixel portion;

an input-output terminal; and

a connection wiring connecting the gate side driver circuit to the input-output terminal.

12. An active matrix display device comprising:

a substrate;

a base insulating film on the substrate, the base insulating film comprising silicon, nitride, and oxygen;

a gate insulating film over the base insulating film, the gate insulating film comprising silicon and oxygen;

a first interlayer insulating film over the gate insulating film, the first interlayer insulating film being formed from an inorganic insulating material and comprising silicon and nitrogen;

a second interlayer insulating film over the first interlayer insulating film, the second interlayer insulating film being made from an organic insulating material;

a first transistor and a second transistor, each in a pixel portion, between the substrate and the first interlayer insulating film, each of the first transistor and the second transistor comprising a polysilicon layer between the base insulating film and the gate insulating film, and a gate electrode comprising molybdenum between the gate insulating film and the first interlayer insulating film;

one of a first source electrode and a first drain electrode of the first transistor between the first interlayer insulating film and the second interlayer insulating film, in a first contact hole formed in the first interlayer insulating film and the gate insulating film, and in direct contact with the polysilicon layer in the first contact hole formed in the first interlayer insulating film;

a first pixel electrode on the second interlayer insulating film and in direct contact with the one of the first source electrode and the first drain electrode in a first contact hole formed in the second interlayer insulating film;

one of a second source electrode and a second drain electrode of the second transistor between the first interlayer insulating film and the second interlayer insulating film, in a second contact hole formed in the first interlayer insulating film and the gate insulating film, and in direct contact with the polysilicon layer in the second contact hole formed in the first interlayer insulating film;

a second pixel electrode on the second interlayer insulating film and in direct contact with the one of the second source electrode and the second drain electrode in a second contact hole formed in the second interlayer insulating film;

a bank made from an organic resin covering an edge of the first pixel electrode, an edge of the second pixel electrode, and the first contact hole formed in the second interlayer insulating film;

a first EL layer on the first pixel electrode and the bank;

a second EL layer on the second pixel electrode and the bank;

a laminate portion formed by an overlap of the first EL layer with the second EL layer;

a third electrode on the first EL layer and on the second EL layer,

a first insulating film comprising silicon and nitrogen over the third electrode; and

a sealing substrate over the first insulating film,

wherein each of the one of the first source electrode and the first drain electrode and the one of the second source electrode and the second drain electrode are a laminate of a film comprising aluminum between two films comprising titanium, and

wherein the active matrix display device is configured to emit light from the first EL layer and the second EL layer to the sealing substrate through the third electrode.

13. The active matrix display device according to claim 12,

wherein the second interlayer insulating film is in direct contact with the one of the first source electrode and the first drain electrode and the one of the second source electrode and the second drain electrode.

14. The active matrix display device according to claim 12,

wherein the second interlayer insulating film is in direct contact with the first interlayer insulating film.

15. The active matrix display device according to claim 12, further comprising:

a second insulating film made from an inorganic material between the second interlayer insulating film and each of the first interlayer insulating film, the one of the first source electrode and the first drain electrode, and the one of the second source electrode and the second drain electrode.

16. The active matrix display device according to claim 12,

wherein the gate insulating film further comprises nitrogen, and

wherein the first insulating film comprising silicon and nitrogen.

17. The active matrix display device according to claim 12,

wherein the third electrode comprises magnesium and silver.

18. The active matrix display device according to claim 12,

wherein the substrate is a glass substrate.

19. The active matrix display device according to claim 12,

wherein the substrate is a flexible substrate.

20. The active matrix display device according to claim 12, further comprising:

a gate side driver circuit adjacent to the pixel portion;

an input-output terminal; and

a connection wiring connecting the gate side driver circuit to the input-output terminal.

21. An active matrix display device comprising:

a substrate;

a gate insulating film over the substrate, the gate insulating film comprising silicon, oxygen, and nitrogen;

a first interlayer insulating film over the gate insulating film, the first interlayer insulating film being made from an inorganic insulating material and comprising silicon;

a second interlayer insulating film over the first interlayer insulating film, the second interlayer insulating film being made from an organic insulating material;

a first transistor and a second transistor, each in a pixel portion, between the substrate and the second interlayer insulating film, each of the first transistor and the second transistor comprising a semiconductor layer between the substrate and the first interlayer insulating film, and a gate electrode comprising a compound of molybdenum and titanium with the gate insulating film between the semiconductor layer and the gate electrode;

one of a first source electrode and a first drain electrode of the first transistor between the first interlayer insulating film and the second interlayer insulating film, in a first contact hole formed in the first interlayer insulating film, and in direct contact with the semiconductor layer via the first contact hole formed in the first interlayer insulating film;

a first pixel electrode on the second interlayer insulating film and in electrical contact with the one of the first source electrode and the first drain electrode via a first contact hole formed in the second interlayer insulating film;

one of a second source electrode and a second drain electrode of the second transistor between the first interlayer insulating film and the second interlayer insulating film, in a second contact hole formed in the first interlayer insulating film, and in direct contact with the semiconductor layer via the second contact hole formed in the first interlayer insulating film;

a second pixel electrode on the second interlayer insulating film and in electrical contact with the one of the second source electrode and the second drain electrode via a second contact hole formed in the second interlayer insulating film;

a bank made from an organic resin covering an edge of the first pixel electrode, an edge of the second pixel electrode, and the first contact hole formed in the second interlayer insulating film;

a first EL layer on the first pixel electrode and the bank;

a second EL layer on the second pixel electrode and the bank;

a laminate portion formed by an overlap of the first EL layer with the second EL layer;

a third electrode on the first EL layer and on the second EL layer;

a first insulating film over the third electrode; and

a sealing substrate over the first insulating film,

wherein each of the one of the first source electrode and the first drain electrode and the one of the second source electrode and the second drain electrode comprise titanium and molybdenum, and

wherein the active matrix display device is configured to emit light from the first EL layer and the second EL layer to the substrate through the first pixel electrode and the second pixel electrode.

22. The active matrix display device according to claim 21,

wherein the second interlayer insulating film is in direct contact with the one of the first source electrode and the first drain electrode and the one of the second source electrode and the second drain electrode.

23. The active matrix display device according to claim 21,

wherein the second interlayer insulating film is in direct contact with the first interlayer insulating film.

24. The active matrix display device according to claim 21, further comprising:

a second insulating film made from an inorganic material between the second interlayer insulating film and each of the first interlayer insulating film, the one of the first source electrode and the first drain electrode, and the one of the second source electrode and the second drain electrode.

25. The active matrix display device according to claim 21,

wherein the gate electrode of the first transistor overlaps the semiconductor layer of the first transistor.

26. The active matrix display device according to claim 21, further comprising:

a first color filter overlapping with the first EL layer; and

a second color filter overlapping with the second EL layer,

wherein the first color filter and the second color filter are formed on the substrate.

27. The active matrix display device according to claim 21,

wherein the substrate is a glass substrate.

28. The active matrix display device according to claim 21,

wherein the substrate is a flexible substrate.

29. The active matrix display device according to claim 21, further comprising:

a gate side driver circuit adjacent to the pixel portion;

an input-output terminal; and

a connection wiring connecting the gate side driver circuit to the input-output terminal.

30. An active matrix display device comprising:

a substrate;

a gate insulating film over the substrate, the gate insulating film comprising silicon and nitrogen;

a first interlayer insulating film over the gate insulating film, the first interlayer insulating film being made from an inorganic insulating material and comprising silicon and nitrogen;

a second interlayer insulating film over the first interlayer insulating film, the second interlayer insulating film being made from an organic insulating material;

a first transistor and a second transistor, each in a pixel portion, between the substrate and the first interlayer insulating film, each of the first transistor and the second transistor comprising a polysilicon layer between the substrate and the first interlayer insulating film, and a gate electrode comprising molybdenum with the gate insulating film between the polysilicon layer and the gate electrode;

one of a first source electrode and a first drain electrode of the first transistor between the first interlayer insulating film and the second interlayer insulating film, in a first contact hole formed in the first interlayer insulating film, and in direct contact with the polysilicon layer via the first contact hole formed in the first interlayer insulating film;

a first pixel electrode on the second interlayer insulating film and in direct contact with the one of the first source electrode and the first drain electrode in a first contact hole formed in the second interlayer insulating film;

one of a second source electrode and a second drain electrode of the second transistor between the first interlayer insulating film and the second interlayer insulating film, in a second contact hole formed in the first interlayer insulating film, and in direct contact with the polysilicon layer via the second contact hole formed in the first interlayer insulating film;

a second pixel electrode on the second interlayer insulating film and in direct contact with the one of the second source electrode and the second drain electrode in a second contact hole formed in the second interlayer insulating film;

a bank made from an organic resin covering an edge of the first pixel electrode, an edge of the second pixel electrode, and the first contact hole formed in the second interlayer insulating film;

a first EL layer on the first pixel electrode and the bank;

a second EL layer on the second pixel electrode and the bank;

a laminate portion formed by an overlap of the first EL layer with the second EL layer;

a third electrode on the first EL layer and on the second EL layer;

a first insulating film over the third electrode;

a first color filter and a second color filter overlapping the first EL layer and the second EL layer, respectively;

a shading portion overlapping the bank and the laminate portion; and

a sealing substrate over the first color filter, the second color filter, and the shading portion,

wherein each of the one of the first source electrode and the first drain electrode and the one of the second source electrode and the second drain electrode are a laminate of a film comprising aluminum between two films comprising titanium, and

wherein the active matrix display device is configured to emit light from the first EL layer and the second EL layer to the sealing substrate through the third electrode.

31. The active matrix display device according to claim 30,

wherein the second interlayer insulating film is in direct contact with the one of the first source electrode and the first drain electrode and the one of the second source electrode and the second drain electrode.

32. The active matrix display device according to claim 30,

wherein the second interlayer insulating film is in direct contact with the first interlayer insulating film.

33. The active matrix display device according to claim 30, further comprising:

a second insulating film made from an inorganic material between the second interlayer insulating film and each of the first interlayer insulating film, the one of the first source electrode and the first drain electrode, and the one of the second source electrode and the second drain electrode.

34. The active matrix display device according to claim 30,

wherein the gate electrode of the first transistor overlaps the polysilicon layer of the first transistor.

35. The active matrix display device according to claim 30,

wherein the substrate is a glass substrate.

36. The active matrix display device according to claim 30,

wherein the substrate is a flexible substrate.

37. The active matrix display device according to claim 30, wherein the first color filter, the second color filter, and the shading portion are between the first insulating film and the sealing substrate.

38. The active matrix display device according to claim 30,

wherein the first color filter, the second color filter, and the shading portion are formed on the sealing substrate.

39. The active matrix display device according to claim 30, further comprising:

a gate side driver circuit adjacent to the pixel portion;

an input-output terminal; and

a connection wiring connecting the gate side driver circuit to the input-output terminal.