Photosensor and display device

• US 9,450,133 B2
• Filed: 11/24/2009
• Issued: 09/20/2016
• Est. Priority Date: 11/28/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nakamura, Yasuo, Tanada, Yoshifumi
• Primary Examiner(s): Merlin, Jessica M
• Application Number:
  US12/624,666
• Publication Number:
  US 20100134735A1
• Time in Patent Office: 2,492 Days
• US Class Current: 1/1
• CPC Class Codes: G02F 1/13312 Circuits comprising photodetectors for purposes other than feedback
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 31/1055 the devices comprising amorphous materials of Group IV of the Periodic Table
• CPC Class Codes: H10K 59/40 OLEDs integrated with touch screens
• CPC Class Codes: H10K 59/65 OLEDs integrated with inorganic image sensors

Abstract

Thin film transistors including an oxide semiconductor containing indium, gallium, and zinc are easily arranged in a matrix over a large substrate and have small characteristic variations. With amplifier circuits and driver circuits of display elements which include the thin film transistors including an oxide semiconductor containing indium, gallium, and zinc with small characteristic variations, intensity distribution of light received by the photodiodes arranged in a matrix is converted into electrical signals with high reproducibility and output, and the display elements arranged in a matrix can be uniformly driven.

Claims

1. A photosensor comprising:

a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer including silicon; and

an amplifier circuit including a thin film transistor, the thin film transistor comprising;

an oxide semiconductor layer;

buffer layers; and

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer with the buffer layers therebetween,

wherein the oxide semiconductor layer and the buffer layers comprise indium, gallium, and zinc,

wherein a ratio of indium, gallium, and zinc in the oxide semiconductor layer is the same as that in the buffer layers,

wherein the oxide semiconductor layer is richer in oxygen than the buffer layers, and

wherein the buffer layers consist of non-single crystalline oxide semiconductor including nanocrystal structure.

2. The photosensor according to claim 1,

wherein the buffer layers have higher electrical conductivity than the oxide semiconductor layer.

3. The photosensor according to claim 1,

wherein the oxide semiconductor layer and the buffer layers are formed by a sputtering method using oxygen gas and rare gas, and

wherein a ratio of oxygen gas to rare gas for the oxide semiconductor layer is higher than a ratio of oxygen gas to rare gas for the buffer layers.

4. A photosensor comprising:

a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer comprising;

a first semiconductor layer including an impurity element having one conductivity type;

a second semiconductor layer in contact with the first semiconductor layer; and

a third semiconductor layer in contact with the second semiconductor layer, wherein the third semiconductor layer includes an impurity element having a conductivity type opposite to the conductivity type of the first semiconductor layer; and

an amplifier circuit including at least a selection thin film transistor, an amplifying thin film transistor, and a reset thin film transistor, each thin film transistor comprising;

an oxide semiconductor layer;

buffer layers; and

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer with the buffer layers therebetween,

wherein the oxide semiconductor layer and the buffer layers comprise indium, gallium, and zinc,

wherein a ratio of indium, gallium, and zinc in the oxide semiconductor layer is the same as that in the buffer layers,

wherein the oxide semiconductor layer is richer in oxygen than the buffer layers,

wherein a gate electrode of the reset thin film transistor is electrically connectable to a reset gate signal line,

wherein one of the source electrode and the drain electrode of the reset thin film transistor is electrically connectable to a sensor power supply line,

wherein the other one of the source electrode and the drain electrode of the reset thin film transistor is electrically connectable to a gate electrode of the amplifying thin film transistor and one of an anode and a cathode of the photoelectric conversion element,

wherein one of the source electrode and the drain electrode of the amplifying thin film transistor is electrically connectable to the sensor power supply line,

wherein one of the source electrode and the drain electrode of the selection thin film transistor is electrically connectable to a sensor output wiring,

wherein the other one of the source electrode and the drain electrode of the selection thin film transistor is electrically connectable to the other one of the source electrode and the drain electrode of the amplifying thin film transistor,

wherein a gate electrode of the selection thin film transistor is electrically connectable to a sensor gate signal line, and

wherein the buffer layers consist of non-single crystalline oxide semiconductor including nanocrystal structure.

5. The photosensor according to claim 4,

wherein the reset thin film transistor and the selection thin film transistor are turned on or off according to signals input to the reset gate signal line and the sensor gate signal line.

6. The photosensor according to claim 4,

wherein the buffer layers have higher electrical conductivity than the oxide semiconductor layer.

7. The photosensor according to claim 4,

wherein the oxide semiconductor layer and the buffer layers are formed by a sputtering method using oxygen gas and rare gas, and

wherein a ratio of oxygen gas to rare gas for the oxide semiconductor layer is higher than a ratio of oxygen gas to rare gas for the buffer layers.

8. An area sensor comprising:

a plurality of pixels, each of the plurality of pixels comprising;

a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer comprising;

a first semiconductor layer including an impurity element having one conductivity type;

a second semiconductor layer in contact with the first semiconductor layer; and

a third semiconductor layer in contact with the second semiconductor layer, wherein the third semiconductor layer includes an impurity element having a conductivity type opposite to the conductivity type of the first semiconductor layer; and

an amplifier circuit including at least a selection thin film transistor, an amplifying thin film transistor, and a reset thin film transistor, each thin film transistor comprising;

an oxide semiconductor layer;

buffer layers; and

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer with the buffer layers therebetween,

wherein the oxide semiconductor layer and the buffer layers comprise indium, gallium, and zinc,

wherein a ratio of indium, gallium, and zinc in the oxide semiconductor layer is the same as that in the buffer layers,

wherein the oxide semiconductor layer is richer in oxygen than the buffer layers,

wherein a gate electrode of the reset thin film transistor is electrically connectable to a reset gate signal line,

wherein one of the source electrode and the drain electrode of the reset thin film transistor is electrically connectable to a sensor power supply line,

wherein the other one of the source electrode and the drain electrode of the reset thin film transistor is electrically connectable to a gate electrode of the amplifying thin film transistor and one of an anode and a cathode of the photoelectric conversion element,

wherein one of the source electrode and the drain electrode of the amplifying thin film transistor is electrically connectable to the sensor power supply line,

wherein one of the source electrode and the drain electrode of the selection thin film transistor is electrically connectable to a sensor output wiring,

wherein the other one of the source electrode and the drain electrode of the selection thin film transistor is electrically connectable to the other one of the source electrode and the drain electrode of the amplifying thin film transistor,

wherein a gate electrode of the selection thin film transistor is electrically connectable to a sensor gate signal line, and

wherein the buffer layers consist of non-single crystalline oxide semiconductor including nanocrystal structure.

9. The area sensor according to claim 8,

wherein the reset thin film transistor and the selection thin film transistor are turned on or off according to signals input to the reset gate signal line and the sensor gate signal line.

10. The area sensor according to claim 8,

wherein the buffer layers have higher electrical conductivity than the oxide semiconductor layer.

11. The area sensor according to claim 8,

wherein the oxide semiconductor layer and the buffer layers are formed by a sputtering method using oxygen gas and rare gas, and

wherein a ratio of oxygen gas to rare gas for the oxide semiconductor layer is higher than a ratio of oxygen gas to rare gas for the buffer layers.

12. A display device comprising:

a plurality of pixels, each of the plurality of pixels comprising;

an electrode layer;

a photoelectric conversion element including a photoelectric conversion layer being in contact with the electrode layer, the photoelectric conversion layer including silicon;

an amplifier circuit;

a display element; and

a driver circuit of the display element,

wherein the amplifier circuit and the driver circuit each include a thin film transistor, each thin film transistor comprising;

an oxide semiconductor layer;

buffer layers; and

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer with the buffer layers therebetween,

wherein the oxide semiconductor layer and the buffer layers comprise indium, gallium, and zinc,

wherein a ratio of indium, gallium, and zinc in the oxide semiconductor layer is the same as that in the buffer layers,

wherein the oxide semiconductor layer is richer in oxygen than the buffer layers, and

wherein the buffer layers consist of non-single crystalline oxide semiconductor including nanocrystal structure.

13. The display device according to claim 12,

wherein the display element includes a layer containing a light-emitting substance, and

wherein the layer containing the light-emitting substance is in contact with the electrode layer.

14. The display device according to claim 12,

further comprising a pixel electrode, a counter electrode, and a layer containing liquid crystal between the pixel electrode and the counter electrode.

15. A method for operating the display device according to claim 12 with a laser pointer.

16. The display device according to claim 12,

wherein the buffer layers have higher electrical conductivity than the oxide semiconductor layer.

17. The display device according to claim 12,

wherein the oxide semiconductor layer and the buffer layers are formed by a sputtering method using oxygen gas and rare gas, and

wherein a ratio of oxygen gas to rare gas for the oxide semiconductor layer is higher than a ratio of oxygen gas to rare gas for the buffer layers.

18. A display device comprising:

an electrode layer; and

a plurality of pixels, each of the plurality of pixels comprising;

a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer comprising;

a first semiconductor layer including an impurity element having one conductivity type;

a second semiconductor layer in contact with the first semiconductor layer; and

a third semiconductor layer in contact with the second semiconductor layer and in contact with the electrode layer, wherein the third semiconductor layer includes an impurity element having a conductivity type opposite to the conductivity type of the first semiconductor layer;

an amplifier circuit including at least a selection thin film transistor, an amplifying thin film transistor, and a reset thin film transistor, each thin film transistor comprising;

a first oxide semiconductor layer;

buffer layers; and

a source electrode and a drain electrode electrically connected to the first oxide semiconductor layer with the buffer layers therebetween,

a display element; and

a driver circuit of the display element including at least a switching thin film transistor including a second oxide semiconductor layer,

wherein the first oxide semiconductor layer, the second oxide semiconductor layer and the buffer layers comprise indium, gallium, and zinc,

wherein a ratio of indium, gallium, and zinc in the first oxide semiconductor layer is the same as that in the buffer layers,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are richer in oxygen than the buffer layers,

wherein a gate electrode of the reset thin film transistor is electrically connectable to a reset gate signal line,

wherein one of the source electrode and the drain electrode of the reset thin film transistor is electrically connectable to a sensor power supply line,

wherein the other one of the source electrode and the drain electrode of the reset thin film transistor is electrically connectable to a gate electrode of the amplifying thin film transistor and one of an anode and a cathode of the photoelectric conversion element,

wherein one of the source electrode and the drain electrode of the amplifying thin film transistor is electrically connectable to the sensor power supply line,

wherein one of the source electrode and the drain electrode of the selection thin film transistor is electrically connectable to a sensor output wiring,

wherein the other one of the source electrode and the drain electrode of the selection thin film transistor is electrically connectable to the other one of the source electrode and the drain electrode of the amplifying thin film transistor, and

wherein a gate electrode of the selection thin film transistor is electrically connectable to a sensor gate signal line,

wherein a gate electrode of the switching thin film transistor is electrically connectable to a gate signal line, and

wherein one of the source electrode and the drain electrode of the switching thin film transistor is electrically connectable to a source signal line, and

wherein the buffer layers consist of non-single crystalline oxide semiconductor including nanocrystal structure.

19. The display device according to claim 18,

wherein the display element includes a layer containing a light-emitting substance, and

wherein the layer containing the light-emitting substance is in contact with the electrode layer.

20. The display device according to claim 18,

further comprising a pixel electrode, a counter electrode, and a layer containing liquid crystal between the pixel electrode and the counter electrode.

21. A method for operating the display device according to claim 18 with a laser pointer.

22. The display device according to claim 18,

wherein the buffer layers have higher electrical conductivity than the first oxide semiconductor layer.

23. The display device according to claim 18,

wherein the first oxide semiconductor layer and the buffer layers are formed by a sputtering method using oxygen gas and rare gas, and

wherein a ratio of oxygen gas to rare gas for the first oxide semiconductor layer is higher than a ratio of oxygen gas to rare gas for the buffer layers.