Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices

• US 9,450,143 B2
• Filed: 01/24/2012
• Issued: 09/20/2016
• Est. Priority Date: 06/18/2010
• Status: Active Grant

• Current Assignee: Korrus Incorporated (MKD Electric, Inc.)
• Original Assignee: Soraa, Inc.
• Inventors: Sharma, Rajat, Felker, Andrew, David, Aurelien J.F.
• Primary Examiner(s): Landau, Matthew
• Assistant Examiner(s): Anya, Igwe U
• Application Number:
  US13/357,578
• Publication Number:
  US 20130026483A1
• Time in Patent Office: 1,701 Days
• Field of Search: 257/76
• US Class Current: 1/1
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

Claims

1. A lamp comprising:

an light emitting diode (LED) device comprising at least;

a gallium and nitrogen containing substrate having first, second, and third a-planes forming an equilateral triangle;

a light-emitting epitaxial structure overlying said substrate;

p-type metallized contact; and

an n-type metallized contact;

wherein said LED device comprises no more than five sides, wherein three sides of said five sides are along said first, second and third a-planes; and

the remaining two sides of said five sides have a triangular shape and are configured from equivalent crystal planes.

2. The lamp of claim 1, wherein the two sides are in parallel to each other.

3. The lamp of claim 1, wherein at least one of the three surfaces is roughened.

4. The lamp of claim 1, wherein said substrate comprises bulk GaN.

5. The lamp of claim 1, wherein said equivalent crystal planes are c-planes.

6. The lamp of claim 1, wherein said first, second and third sides are cleaved sides.

7. The lamp of claim 6, wherein said first, second and third sides have striations along said a-planes.

8. The lamp of claim 7, wherein said striations are perpendicular to said fourth and fifth sides.

9. The lamp of claim 1, wherein said optical device has only five sides.

10. A light emitting diode (LED) device comprising:

a gallium and nitrogen containing substrate having first, second, and third a-planes forming a triangle; and

a light-emitting epitaxial structure overlying said substrate;

a p-type metallized contact; and

n-type metallized contact;

wherein said LED device comprises no more than five sides, wherein three of said five sides are along said first, second, and third a-planes, and the remaining two sides of said five sides have a triangular shape and are configured from equivalent crystal planes.

11. The LED device of claim 10, wherein the equivalent crystal planes are c-planes.

12. The LED device of claim 10, wherein the three surface regions are configured from respective scribes provided within a vicinity of respective a-planes.

13. The LED device of claim 10, wherein the two surfaces are parallel to each other.

14. The LED of claim 10, wherein at least one of the three surfaces is roughened.

15. The LED device of claim 10, wherein said substrate comprises bulk GaN.

16. The LED device of claim 15, wherein said light-emitting epitaxial structure comprises GaN.

17. The LED device of claim 10, wherein said first, second and third sides are cleaved sides.

18. The LED device of claim 17, wherein said first, second and third sides have striations along said a-planes.

19. The LED device of claim 18, wherein said striations are perpendicular to said fourth and fifth sides.

20. The LED device of claim 10, wherein said optical device has only five sides.

21. A lamp comprising:

an optical device comprising at least;

a gallium and nitrogen containing substrate having first, second, and third a-planes forming an equilateral triangle; and

a light-emitting epitaxial structure overlying said substrate;

wherein said optical device comprises no more than five sides, wherein three sides of said five sides are along said first, second and third a-planes; and

the remaining two sides of said five sides have a triangular shape and are configured from equivalent crystal planes, wherein said first, second and third sides are sufficiently rough to achieve a light extraction efficiency of over 80%.

22. An optical device comprising:

a gallium and nitrogen containing substrate having first, second and third a-planes forming a triangle; and

a light-emitting epitaxial structure overlying said substrate;

wherein said optical device comprises no more than five sides, wherein three of said five sides are along said first, second, and third a-planes, and the remaining two sides of said five sides have a triangular shape and are configured from equivalent crystal planes, wherein said first, second and third sides are sufficiently rough to achieve a light extraction efficiency of over 80%.