Plant illumination device and method

• US 9,450,144 B2
• Filed: 02/08/2012
• Issued: 09/20/2016
• Est. Priority Date: 03/17/2011
• Status: Active Grant

• Current Assignee: Valoya Oy
• Original Assignee: Valoya Oy
• Inventors: Aikala, Lars, Kivimaki, Ilkka
• Primary Examiner(s): Nguyen, Trinh
• Application Number:
  US13/695,483
• Publication Number:
  US 20130042527A1
• Time in Patent Office: 1,686 Days
• Field of Search: 47/581.LS, 47/581.R, 47D/IG.6, 47/17, 47/10.1 R, 257/14, 257/39, 257/E33.008, 977/774
• US Class Current: 1/1
• CPC Class Codes: A01G 7/045 with electric lighting
• CPC Class Codes: A01G 9/20 Forcing-frames; Lights , i.e. glass panels covering the forcing-frames
• CPC Class Codes: A01G 9/249 Lighting means with special arrangements for promoting growth A01G7/045
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: Y02P 60/14 Measures for saving energy, e.g. in green houses

Abstract

An improved method to produce artificial light for plant cultivation, an illumination device with a semiconductor light emission solution and device suited for plant cultivation in a greenhouse environment are described. The best mode is considered to be a lighting device with binary alloy quantum dots (110, 120, 130, 140, 150, 160) made by colloidal methods to produce a size distribution of quantum dots that produces an emission spectrum similar to the photosynthetically active radiation (PAR) spectrum. The methods and arrangements allow more precise spectral tuning of the emission spectrum for lights used in plant (310, 311) cultivation. Therefore unexpected improvements in the photomorphogenetic control of plant growth, and further improvements in plant production are realized.

Claims

1. A plant cultivation lighting device, comprising:

a lighting system including a plurality of quantum dots of different sizes, each of the quantum dots being configured to produce light of a specific wavelength based on the size of the respective quantum dot,

wherein the light produced by the quantum dots is absorbable by photomorphogenetic receptors of plants and thereby results in the lighting device producing an aggregate emission spectrum that causes a photomorphogenetic effect in the plants, and

wherein the size distribution of said plurality of quantum dots produces the aggregate emission spectrum that is the same as the photosynthetically active radiation (PAR) spectrum, except that the emission spectrum omits or provides a very low intensity in the green yellow (500-600) nm band and comprises a high intensity spectral feature in the far red 700-800 nm band.

2. The lighting device as claimed in claim 1, further comprising a plurality of multiple quantum well structures for at least one light emitting diode, and at least one quantum well structure comprising quantum dot structures on a barrier layer.

3. The lighting device as claimed in claim 1, wherein the quantum dots emit photons to the plants in a band or in various bands with preset relative intensities in the photon spectrum that cause the photomorphogenetic effect in the plants.

4. The lighting device as claimed in claim 3, wherein the photomorphogenetic effect is one or more of the following biological parameters:

weight, leaf number, root mass, stem height, and chemical composition including one or more of vitamin, mineral, nutrient content, and nutrient concentration of the plant at different time points or at harvesting maturity.

5. The lighting device as claimed in claim 1, wherein at least one of said quantum dots is made of any of the following alloys:

GaN, InGaN, AlGaN, GaAs, cadmium selenide, cadmium sulphide, indium arsenide, indium phosphide and/or cadmium selenide sulphide or any combination thereof.

6. The lighting device as claimed in claim 1, wherein the size distribution of the quantum dots comprises quantum dots of different sizes within the range of 1 nm-20 nm.

7. The lighting device as claimed in claim 1, wherein at least one of said quantum dots is produced by a metal organic chemical vapor deposition (MOCVD) process.

8. The lighting device as claimed in claim 1, wherein at least one of said quantum dots is produced by a colloidal synthesis process.

9. The lighting device as claimed in claim 1, wherein at least one of the quantum dots emits in the far red 700-800 nm band.

17. A method for enhancing plant growth, comprising:

emitting light, by the at least one lighting device of claim 1, to at least one plant with the at least one plant in ambient light or in a dark cavity, said lighting device being the sole source of light.

18. The lighting as claimed in claim 1, wherein said lighting device is surrounded by a shading cavity which is configured to be closed with a lid.

10. A lighting method for plant cultivation, comprising:

illuminating light produced by a plurality of quantum dots of different sizes to at least one plant, the light being absorbable by photomorphogenetic receptors of the at least one plant to cause a photomorphogenetic effect in the at least one plant,

wherein the size distribution of said plurality of quantum dots produces an aggregate emission spectrum the same as the photosynthetically active radiation (PAR) spectrum, except that the emission spectrum omits or provides a very low intensity in the green yellow (500-600) nm band and comprises a high intensity spectral feature in the far red 700-800 nm band.

11. The lighting method as claimed in claim 10, wherein the quantum dots emit photons to the plants in a band or in various bands with preset relative intensities in the photon spectrum that cause the photomorphogenetic effect in the plants.

12. The lighting method as claimed in claim 10, wherein the photomorphogenetic effect is one or more of the following biological parameters:

weight, leaf number, root mass, stem height, and chemical composition including one or more of vitamin, mineral, nutrient content, and nutrient concentration of the plant at different time points or at harvesting maturity.

13. The lighting method as claimed in claim 10, wherein at least one of said quantum dots is made of any of the following alloys:

GaN, InGaN, AlGaN, GaAs cadmium selenide, cadmium sulphide, indium arsenide, indium phosphide and/or cadmium selenide sulphide or any combination thereof.

14. The lighting method as claimed in claim 10, wherein the size distribution of the quantum dots comprises quantum dots of different sizes within the range of 2 nm-200 nm.

15. The lighting method as claimed in claim 10, wherein at least one of said quantum dots is produced by colloidal synthesis.

16. The lighting method as claimed in claim 10, wherein the size of at least one of the quantum dots results in the quantum dot emitting in the far red 700-800 nm band.