Light emitting device having wavelength converting layer
DCFirst Claim
1. A light emitting device, comprising:
- semiconductor stacked structures electrically connected to one another by connectors, wherein the semiconductor stacked structures comprise a first semiconductor stacked structure and a second semiconductor stacked structure;
a wavelength converting layer covering upper surfaces of the semiconductor stacked structures;
first electrodes disposed on the semiconductor stacked structures, respectively;
second electrodes disposed on the semiconductor stacked structures, respectively;
a first additional electrode disposed only on the first electrode on the first semiconductor stacked structure;
a second additional electrode disposed only on the second electrode on the second semiconductor stacked structure; and
a mount comprising a first lead terminal and a second lead terminal, electrically connected to the first additional electrode and the second additional electrode, respectively,wherein each of the connectors electrically connects two of the semiconductor stacked structures by connecting the first electrode of one semiconductor stacked structure to the second electrode of another semiconductor stacked structure, andwherein the connectors are disposed under an upper surface of the wavelength converting layer.
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Abstract
Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.
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Citations
13 Claims
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1. A light emitting device, comprising:
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semiconductor stacked structures electrically connected to one another by connectors, wherein the semiconductor stacked structures comprise a first semiconductor stacked structure and a second semiconductor stacked structure; a wavelength converting layer covering upper surfaces of the semiconductor stacked structures; first electrodes disposed on the semiconductor stacked structures, respectively; second electrodes disposed on the semiconductor stacked structures, respectively; a first additional electrode disposed only on the first electrode on the first semiconductor stacked structure; a second additional electrode disposed only on the second electrode on the second semiconductor stacked structure; and a mount comprising a first lead terminal and a second lead terminal, electrically connected to the first additional electrode and the second additional electrode, respectively, wherein each of the connectors electrically connects two of the semiconductor stacked structures by connecting the first electrode of one semiconductor stacked structure to the second electrode of another semiconductor stacked structure, and wherein the connectors are disposed under an upper surface of the wavelength converting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification