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Structure and method to reduce shorting in STT-MRAM device

  • US 9,450,180 B1
  • Filed: 12/14/2015
  • Issued: 09/20/2016
  • Est. Priority Date: 11/03/2015
  • Status: Active Grant
First Claim
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1. A method of making a magnetic random access memory (MRAM) device, the method comprising:

  • depositing a spacer material on an electrode;

    forming a magnetic tunnel junction (MTJ) on the spacer material, the MTJ comprising a reference layer positioned in contact with the spacer material, a free layer, and a tunnel barrier layer arranged between the reference layer and the free layer;

    patterning a hard mask on the free layer of the MTJ;

    etching the MTJ and the spacer material to transfer a pattern of the hard mask into the MTJ and the spacer material;

    forming an insulating layer along a sidewall of the hard mask, the MTJ, and the spacer material;

    disposing an interlayer dielectric (ILD) on and around the hard mask, the MTJ, and the spacer material;

    etching through the ILD to form a trench that extends to a surface and a sidewall of the hard mask and a sidewall of a portion of the MTJ; and

    disposing a metal in the trench to form a contact electrode.

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