Border ring mode suppression in solidly-mounted bulk acoustic wave resonator
First Claim
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1. A solidly mounted bulk acoustic wave (BAW) resonator comprising:
- a Bragg reflector;
a plurality of layers over the Bragg reflector and comprising a piezoelectric layer between a first electrode comprising tungsten and a second electrode that does not comprise tungsten;
a mass load over the plurality of layers and defining a border region within the plurality of layers and below the mass load, wherein;
an internal region is defined between the first electrode and the second electrode, within the plurality of layers and inside of the border region such that the first electrode and the second electrode reside in the internal region; and
an external region is defined within the plurality of layers and outside of the border region; and
an extension that resides against the piezoelectric layer in the external region and is directly coupled to a side edge of the second electrode, wherein acoustic impedances of the second electrode and the extension are at least similar.
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Abstract
Embodiments provide a solidly-mounted bulk acoustic wave (BAW) resonator and method of making same. In embodiments, the BAW resonator may include one or more extensions that are acoustical similar to active region components of the BAW resonator. Other embodiments may be described and claimed.
18 Citations
28 Claims
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1. A solidly mounted bulk acoustic wave (BAW) resonator comprising:
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a Bragg reflector; a plurality of layers over the Bragg reflector and comprising a piezoelectric layer between a first electrode comprising tungsten and a second electrode that does not comprise tungsten; a mass load over the plurality of layers and defining a border region within the plurality of layers and below the mass load, wherein; an internal region is defined between the first electrode and the second electrode, within the plurality of layers and inside of the border region such that the first electrode and the second electrode reside in the internal region; and an external region is defined within the plurality of layers and outside of the border region; and an extension that resides against the piezoelectric layer in the external region and is directly coupled to a side edge of the second electrode, wherein acoustic impedances of the second electrode and the extension are at least similar. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A solidly-mounted bulk acoustic wave (BAW) resonator comprising:
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an internal region, a border region, and an external region; a piezoelectric layer disposed in the internal region, the border region, and the external region;
a top electrode coupled with a first surface of the piezoelectric layer and disposed in the internal region and the border region;a first extension coupled with the first surface of the piezoelectric layer and disposed in the external region, the first extension having an acoustic impedance that is at least similar to an acoustic impedance of the top electrode; a bottom electrode coupled with a second surface of the piezoelectric layer, the second surface being opposite the first surface; and a second extension directly coupled with the second surface of the piezoelectric layer and disposed in the external region, the second extension having an acoustic impedance that is at least similar to an acoustic impedance of the bottom electrode, wherein; both the second extension and the bottom electrode include a tungsten layer and an aluminum copper layer; the top electrode comprises aluminum copper and has a thickness of approximately 200 nanometers;
the tungsten layer has a thickness of approximately 70 nanometers; and
the aluminum copper layer has a thickness of approximately 190 nanometers. - View Dependent Claims (17, 18, 19)
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20. A solidly-mounted bulk acoustic wave (BAW) resonator comprising:
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an internal region, a border region, and an external region; a piezoelectric layer disposed in the internal region, the border region, and the external region;
a top electrode coupled with a first surface of the piezoelectric layer and disposed in the internal region and the border region;a first extension coupled with the first surface of the piezoelectric layer and disposed in the external region, the first extension having an acoustic impedance that is at least similar to an acoustic impedance of the top electrode; a bottom electrode coupled with a second surface of the piezoelectric layer, the second surface being opposite the first surface; and a second extension directly coupled with the second surface of the piezoelectric layer and disposed in the external region, the second extension having an acoustic impedance that is at least similar to an acoustic impedance of the bottom electrode, wherein; both the second extension and the bottom electrode include a tungsten layer and an aluminum copper layer; the top electrode comprises molybdenum and has a thickness of approximately 215 nanometers;
the piezoelectric layer has a thickness of approximately 1200 nanometers;
the tungsten layer has a thickness of approximately 184 nanometers; and
the aluminum copper layer has a thickness of approximately 100 nanometers. - View Dependent Claims (21, 22)
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23. A solidly-mounted bulk acoustic wave resonator comprising:
an internal region, a border region, and an external region; a piezoelectric layer disposed in the internal region, the border region, and the external region;
a top electrode coupled with a first surface of the piezoelectric layer and disposed in the internal region and the border region;a first extension coupled with the first surface of the piezoelectric layer and disposed in the external region, the first extension having an acoustic impedance that is at least similar to an acoustic impedance of the top electrode; a bottom electrode coupled with a second surface of the piezoelectric layer, the second surface being opposite the first surface; and a second extension directly coupled with the second surface of the piezoelectric layer and disposed in the external region, the second extension having an acoustic impedance that is at least similar to an acoustic impedance of the bottom electrode, wherein; both the second extension and the bottom electrode include a tungsten layer and an aluminum copper layer; the top electrode comprises molybdenum and has a thickness of approximately 200 nanometers; the piezoelectric layer has a thickness of approximately 1200 nanometers; the tungsten layer has a thickness of approximately 170 nanometers; the aluminum copper layer has a thickness of approximately 250 nanometers; a difference between an anti-resonance frequency of the external region and an anti-resonance frequency of the internal active region is approximately 49 megahertz; a difference between a resonance frequency of the border region and the resonance frequency of the internal active region is approximately 130 megahertz; and a width of the border region is approximately 0.25 microns.
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24. A system comprising:
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a transceiver to transmit and receive radio frequency (RF) signals; a filter coupled with the transceiver and configured to filter the RF signals provided to the transceiver; a power amplifier coupled with the transceiver and configured to amplify the RF signals received from the transceiver; an antenna structure to transmit and receive the RF signals over air; and an antenna switch module to selectively couple the antenna structure with the filter and the power amplifier, wherein the filter includes a bulk acoustic wave (BAW) resonator having; a Bragg reflector; a plurality of layers over the Bragg reflector and comprising a piezoelectric layer between a first electrode comprising tungsten and a second electrode that does not comprise tungsten; a mass load over the plurality of layers and defining a border region within the plurality of layers and below the mass load, wherein; an internal region is defined between the first electrode and the second electrode, within the plurality of layers and inside of the border region such that the first electrode and the second electrode reside in the internal region; and an external region is defined within the plurality of layers and outside of the border region; and an extension that resides against the piezoelectric layer in the external region and is directly coupled to a side edge of the second electrode, wherein acoustic impedances of the second electrode and the extension are at least similar. - View Dependent Claims (25, 26, 27, 28)
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Specification