×

Radio frequency devices having reduced intermodulation distortion

DC
  • US 9,450,579 B2
  • Filed: 08/22/2015
  • Issued: 09/20/2016
  • Est. Priority Date: 07/07/2012
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor die comprising:

  • a semiconductor substrate;

    a first switch circuit formed on the semiconductor substrate connected between an antenna node and a transmit node;

    a second switch circuit formed on the semiconductor substrate and connected between the antenna node and a receive node;

    a first capacitor formed on the semiconductor substrate and connected in series with the first switch circuit between the first switch circuit and the antenna node;

    a second capacitor formed on the semiconductor substrate and connected in series with the second switch circuit between the second switch circuit and the antenna node; and

    a first shunt arm formed on the semiconductor substrate and connected to the first switch circuit and the transmit node, the first shunt arm including a third switch circuit connected to ground.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×