Radio frequency devices having reduced intermodulation distortion

• US 9,450,579 B2
• Filed: 08/22/2015
• Issued: 09/20/2016
• Est. Priority Date: 07/07/2012
• Status: Active Grant

• Current Assignee: Skyworks Solutions Incorporated
• Original Assignee: Skyworks Solutions Incorporated
• Inventors: Madan, Anuj, Altunkilic, Fikret, Blin, Guillaume Alexandre
• Primary Examiner(s): NGUYEN, TUAN HOANG
• Application Number:
  US14/833,076
• Publication Number:
  US 20150365088A1
• Time in Patent Office: 395 Days
• Field of Search: 455/78, 455/87, 455/252.1, 455/296, 438/178, 438/197, 438/381, 327/427, 327/434, 327/436, 327/437
• US Class Current: 1/1
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00
• CPC Class Codes: H03K 2217/0018 Special modifications or use of the back gate voltage of a FET
• CPC Class Codes: H03K 2217/0054 Gating switches, e.g. pass gates
• CPC Class Codes: H04B 1/44 Transmit/receive switching
• CPC Class Codes: H04B 1/48 in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter H04B1/46 takes precedence

Abstract

Radio-frequency (RF) devices are disclosed providing reduced intermodulation distortion. Disclosed RF and semiconductor devices can include a semiconductor substrate, a switch formed on the semiconductor substrate having a stack of field-effect transistors (FETs) connected in series, and a capacitor formed on the semiconductor substrate and connected in series with the switch, the capacitor configured to inhibit a low-frequency blocker signal from mixing with a fundamental-frequency signal in the switch.

Claims

1. A semiconductor die comprising:

a semiconductor substrate;

a first switch circuit formed on the semiconductor substrate connected between an antenna node and a transmit node;

a second switch circuit formed on the semiconductor substrate and connected between the antenna node and a receive node;

a first capacitor formed on the semiconductor substrate and connected in series with the first switch circuit between the first switch circuit and the antenna node;

a second capacitor formed on the semiconductor substrate and connected in series with the second switch circuit between the second switch circuit and the antenna node; and

a first shunt arm formed on the semiconductor substrate and connected to the first switch circuit and the transmit node, the first shunt arm including a third switch circuit connected to ground.

2. The semiconductor die of claim 1 further comprising an insulator layer disposed between the first and second switch circuits and the semiconductor substrate.

3. The semiconductor die of claim 2 wherein the semiconductor die is a silicon-on-insulator (SOI) die.

4. The semiconductor die of claim 1 wherein the first shunt arm includes a third capacitor connected in series with the first switch circuit between the first switch circuit and the transmit node.

5. The semiconductor die of claim 4 further comprising a second shunt arm connected to the second switch circuit and the receive node, the second shunt arm including a fourth switch circuit connected to ground.

6. The semiconductor die of claim 5 wherein the second shunt arm includes a fourth capacitor connected in series with the second switch circuit between the second switch circuit and the receive node.

7. A method for operating a radio-frequency (RF) device, the method comprising:

providing an RF device including a first switch circuit connected between an antenna node and a transmit node, a second switch circuit connected between the antenna node and a receiver node, a first capacitor connected in series with the first switch circuity between the first switch circuit and the antenna node, a second capacitor connected in series with the second switch circuit between the second switch circuit and the antenna node, and a first shunt arm connected to the first switch circuit and the transmit node, the first shunt arm including a third switch circuit connected to ground;

controlling an RF switch of the RF device by placing the first switch circuit in an ON state and placing the third switch circuit in an OFF state; and

inhibiting a low-frequency blocker signal from mixing with a fundamental-frequency signal in the RF switch using the first capacitor.

8. The method of claim 7 wherein the first switch circuit is formed on an insulator layer disposed between the first switch circuit and a semiconductor substrate.

9. The method of claim 7 wherein the RF switch is a silicon-on-insulator (SOI) switch.

10. The method of claim 7 wherein the first shunt arm includes a third capacitor connected in series with the first switch circuit between the first switch circuit and the transmit node.

11. The method of claim 10 wherein the RF device further includes a second shunt arm connected to the second switch circuit and the receive node, the second shunt arm including a fourth switch circuit connected to ground.

12. The method of claim 11 wherein the second shunt arm includes a fourth capacitor connected in series with the second switch circuit between the second switch circuit and the receive node.

13. A wireless device comprising:

a transceiver configured to process RF signals;

an antenna in communication with the transceiver; and

a switch module interconnected to the antenna and the transceiver and configured to selectively route RF signals to and from the antenna, the switch module including a first switch connected between the antenna and a transmit node, a second switch connected between the antenna and a receive node, a first capacitor connected in series with the first switch between the first switch and the antenna, a second capacitor connected in series with the second switch between the second switch and the antenna, and a first shunt arm connected to the first switch and the transmit node, the first shunt arm including a third switch connected to ground.

14. The wireless device of claim 13 wherein the first switch is formed on a silicon-on-insulator (SOI) die of the wireless device.

15. The wireless device of claim 13 wherein the first capacitor is part of the same semiconductor die as the first switch.

16. The wireless device of claim 13 wherein the first shunt arm includes a third capacitor connected in series with the first switch between the first switch and the transmit node.

17. The wireless device of claim 16 wherein the switch module further includes a second shunt arm connected to the second switch and the receive node, the second shunt arm including a fourth switch connected to ground.

18. The wireless device of claim 17 wherein the second shunt arm includes a fourth capacitor connected in series with the second switch between the second switch and the receive node.