MEMS devices and fabrication methods thereof
First Claim
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1. A method comprising:
- providing a micro-electro-mechanical system (MEMS) substrate having;
a sacrificial layer on a first side, wherein the sacrificial layer comprises a plurality of sealed trenches and the sealed trenches are embedded in the sacrificial layer, and wherein;
top surfaces of the sealed trenches are covered by the sacrificial layer;
sidewalls of the seal trenches are surrounded by the sacrificial layer; and
bottom surfaces of the sealed trenches are on the sacrificial layer;
providing a carrier including a plurality of cavities;
bonding the first side of the MEMS substrate on the carrier;
forming a first bonding material layer on a second side of the MEMS substrate;
applying a sacrificial layer removal process to the MEMS substrate;
providing a semiconductor substrate including a second bonding material layer; and
bonding the semiconductor substrate on the second side of the MEMS substrate.
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Abstract
A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate.
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Citations
20 Claims
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1. A method comprising:
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providing a micro-electro-mechanical system (MEMS) substrate having; a sacrificial layer on a first side, wherein the sacrificial layer comprises a plurality of sealed trenches and the sealed trenches are embedded in the sacrificial layer, and wherein; top surfaces of the sealed trenches are covered by the sacrificial layer; sidewalls of the seal trenches are surrounded by the sacrificial layer; and bottom surfaces of the sealed trenches are on the sacrificial layer; providing a carrier including a plurality of cavities; bonding the first side of the MEMS substrate on the carrier; forming a first bonding material layer on a second side of the MEMS substrate; applying a sacrificial layer removal process to the MEMS substrate; providing a semiconductor substrate including a second bonding material layer; and bonding the semiconductor substrate on the second side of the MEMS substrate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method comprising:
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providing a micro-electro-mechanical system (MEMS) device including; forming a first sacrificial dielectric layer having a plurality of sealed trenches on a first side of the MEMS substrate; forming a plurality of electrodes and mechanical bumps on the first sacrificial dielectric layer; depositing a vapor HF stop layer on the first sacrificial dielectric layer; depositing a second sacrificial dielectric layer on the vapor HF stop layer; and forming a bonding layer on the second sacrificial dielectric layer; providing a carrier including a plurality of cavities; bonding the first side of the MEMS substrate on the carrier; forming a first bonding material layer on a second side of the MEMS substrate; applying a sacrificial layer removal process to the MEMS substrate; providing a semiconductor substrate including a second bonding material layer; and bonding the semiconductor substrate on the second side of the MEMS substrate. - View Dependent Claims (8, 9)
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10. A method comprising:
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providing a first substrate comprising a first sacrificial layer on a first side, wherein the first sacrificial layer comprises a plurality of sealed trenches and the sealed trenches are embedded in and fully enclosed by the first sacrificial layer; providing a carrier comprising a plurality of cavities; bonding the first side of the first substrate on the carrier; depositing a bonding layer on a second side of the first substrate; applying a sacrificial layer removal process to the first substrate; and bonding a second substrate on the second side of the first substrate. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification