Method of increasing MEMS enclosure pressure using outgassing material

• US 9,452,925 B2
• Filed: 08/21/2015
• Issued: 09/27/2016
• Est. Priority Date: 06/27/2011
• Status: Active Grant

• Current Assignee: Invensense Incorporated (TDK Corporation)
• Original Assignee: Invensense Incorporated (TDK Corporation)
• Inventors: Zhang, Cerina, Lim, Martin, Shin, Jongwoo, Seeger, Joseph
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): Inoussa, Mouloucoulaye
• Application Number:
  US14/832,786
• Publication Number:
  US 20150360939A1
• Time in Patent Office: 403 Days
• Field of Search: 257/415, 257/414, 257/416, 257/417, 257/E23.193, 257/723, 257/E23.18, 257/E21.501, 438 48- 52, 438455-459, 438/476
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: B81C 2201/0104 Chemical-mechanical polishing [CMP]
• CPC Class Codes: B81C 2201/0132 Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
• CPC Class Codes: B81C 2203/0145 Hermetically sealing an opening in the lid
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: B81C 2203/035 Soldering
• CPC Class Codes: B81C 2203/0792 Forming interconnections between the electronic processing unit and the micromechanical structure

Abstract

Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.

Claims

1. A manufacturing method, comprising:

providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer, the second passivation layer having a top surface;

forming an opening in a first portion of the second passivation layer, the opening exposing a portion of a surface of the first passivation layer;

patterning the second and first passivation layers to expose portions of the patterned top-level metal layer; and

bonding a second substrate and the first substrate to each other;

wherein the bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.