Method of increasing MEMS enclosure pressure using outgassing material
First Claim
1. A manufacturing method, comprising:
- providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer, the second passivation layer having a top surface;
forming an opening in a first portion of the second passivation layer, the opening exposing a portion of a surface of the first passivation layer;
patterning the second and first passivation layers to expose portions of the patterned top-level metal layer; and
bonding a second substrate and the first substrate to each other;
wherein the bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.
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Abstract
Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.
27 Citations
1 Claim
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1. A manufacturing method, comprising:
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providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer, the second passivation layer having a top surface; forming an opening in a first portion of the second passivation layer, the opening exposing a portion of a surface of the first passivation layer; patterning the second and first passivation layers to expose portions of the patterned top-level metal layer; and bonding a second substrate and the first substrate to each other; wherein the bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.
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Specification