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Carbon nanotube or graphene based pressure switch

  • US 9,455,105 B2
  • Filed: 09/23/2011
  • Issued: 09/27/2016
  • Est. Priority Date: 09/27/2010
  • Status: Active Grant
First Claim
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1. A pressure switch assembly, comprising:

  • a semiconductor substrate;

    a cavity defined within the semiconductor substrate having a cross-sectional area and a depth;

    a bottom conductor disposed within the bottom of the cavity, wherein the bottom conductor has a top surface;

    a conductive membrane disposed above the cavity, wherein the conductive membrane has a bottom surface, and wherein the conductive membrane is configured to deflect toward the top surface of the bottom conductor upon an applied fluid pressure;

    an insulating layer disposed between the bottom surface of the conductive membrane and the top surface of the bottom conductor; and

    a switching element, wherein the switching element is configured to activate upon sufficient deflection of the conductive membrane toward the top surface of the bottom conductor such that electron tunneling through the insulating layer produces sufficient electrical communication between the conductive membrane and the bottom conductor to activate the switching element.

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