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Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating

  • US 9,455,262 B2
  • Filed: 08/25/2015
  • Issued: 09/27/2016
  • Est. Priority Date: 02/07/2010
  • Status: Active Grant
First Claim
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1. A single polysilicon floating gate semiconductor memory cell comprising:

  • a substrate;

    a floating body region exposed at a surface of said substrate and configured to store volatile memory;

    a single polysilicon floating gate configured to store nonvolatile data;

    an insulating region insulating said floating body region from said single polysilicon floating gate; and

    first and second regions exposed at said surface at locations other than where said floating body region is exposed;

    wherein said floating gate is configured to receive transfer of data stored by the volatile memory.

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