Semiconductor device
First Claim
Patent Images
1. A semiconductor device comprising:
- a substrate;
a first insulating film over the substrate;
a metal oxide film over the first insulating film;
a second insulating film over the first insulating film and the metal oxide film, the second insulating film comprising a first oxide insulating film and a first nitride insulating film stacked on the first oxide insulating film;
a light-transmitting electrode over the second insulating film;
a transistor comprising;
a gate electrode;
a portion of the first insulating film over the gate electrode; and
a first portion of the metal oxide film overlapping the gate electrode and defining a metal oxide semiconductor film as a channel formation region;
a capacitor comprising;
a second portion of the metal oxide film defining a light-transmitting conductive film as a first capacitor electrode;
a part of the second insulating film as a capacitor dielectric film over the light-transmitting conductive film; and
the light-transmitting electrode as a second capacitor electrode over the part of the second insulating film,wherein the first oxide insulating film is on and in contact with the first portion of the metal oxide film,wherein the first nitride insulating film is on and in contact with the second portion of the metal oxide film, andwherein the second portion of the metal oxide film contains a dopant in a higher concentration than the first portion of the metal oxide film.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.
-
Citations
24 Claims
-
1. A semiconductor device comprising:
-
a substrate; a first insulating film over the substrate; a metal oxide film over the first insulating film; a second insulating film over the first insulating film and the metal oxide film, the second insulating film comprising a first oxide insulating film and a first nitride insulating film stacked on the first oxide insulating film; a light-transmitting electrode over the second insulating film; a transistor comprising; a gate electrode; a portion of the first insulating film over the gate electrode; and a first portion of the metal oxide film overlapping the gate electrode and defining a metal oxide semiconductor film as a channel formation region; a capacitor comprising; a second portion of the metal oxide film defining a light-transmitting conductive film as a first capacitor electrode; a part of the second insulating film as a capacitor dielectric film over the light-transmitting conductive film; and the light-transmitting electrode as a second capacitor electrode over the part of the second insulating film, wherein the first oxide insulating film is on and in contact with the first portion of the metal oxide film, wherein the first nitride insulating film is on and in contact with the second portion of the metal oxide film, and wherein the second portion of the metal oxide film contains a dopant in a higher concentration than the first portion of the metal oxide film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A semiconductor device comprising:
-
a substrate; a first insulating film over the substrate; a metal oxide film over the first insulating film; a second insulating film over the first insulating film and the metal oxide film; a light-transmitting electrode over the second insulating film; a transistor comprising; a gate electrode; a portion of the first insulating film over the gate electrode; and a first portion of the metal oxide film overlapping the gate electrode and defining a metal oxide semiconductor film as a channel formation region; a capacitor comprising; a second portion of the metal oxide film defining a light-transmitting conductive film as a first capacitor electrode; a part of the second insulating film as a capacitor dielectric film over the light-transmitting conductive film; and the light-transmitting electrode as a second capacitor electrode over the part of the second insulating film, and wherein the second portion of the metal oxide film contains a dopant in a higher concentration than the first portion of the metal oxide film. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
-
-
23. A semiconductor device comprising:
-
a substrate; a first insulating film over the substrate; a second insulating film over the first insulating film, the second insulating film comprising a first oxide insulating film and a first nitride insulating film stacked on the first oxide insulating film; a light-transmitting electrode over the second insulating film; a transistor comprising; a gate electrode; the first insulating film over the gate electrode; and a metal oxide semiconductor film over the first insulating film and overlapping the gate electrode; a capacitor comprising; a light-transmitting conductive film as a first capacitor electrode over the first insulating film; a part of the second insulating film as a capacitor dielectric film over the light-transmitting conductive film; and the light-transmitting electrode as a second capacitor electrode over the part of the second insulating film, wherein the metal oxide semiconductor film and the light-transmitting conductive film are formed from a same film, wherein the first oxide insulating film is on and in contact with the metal oxide semiconductor film, wherein the first nitride insulating film is on and in contact with the light-transmitting conductive film and overlaps the metal oxide semiconductor film, and wherein the light-transmitting conductive film contains a dopant in a higher concentration than the metal oxide semiconductor film. - View Dependent Claims (24)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsYamazaki, Shunpei, Miyake, Hiroyuki, Shishido, Hideaki, Koyama, Jun
-
Primary Examiner(s)Tran, Thien F
-
Application NumberUS14/023,295Publication NumberTime in Patent Office1,113 DaysField of Search257/43, 257/59, 257/72US Class Current1/1CPC Class CodesH01L 27/1225 with semiconductor material...H01L 27/1255 integrated with passive dev...H01L 29/7869 having a semiconductor body...
