High efficiency light emitting diode and method for fabricating the same

• US 9,455,378 B2
• Filed: 03/28/2014
• Issued: 09/27/2016
• Est. Priority Date: 03/31/2010
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Ye, Kyung Hee, Kim, Chang Youn, Shin, Jin Cheol, Lee, Joon Hee, You, Jong Kyun, Lim, Hong Chol
• Primary Examiner(s): Li, Meiya
• Application Number:
  US14/229,713
• Publication Number:
  US 20140209952A1
• Time in Patent Office: 914 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

Claims

1. A light emitting diode (LED) comprising:

a semiconductor stack comprising a first compound semiconductor layer, a second compound semiconductor layer, and an active layer disposed between the first compound semiconductor layer and the second compound semiconductor layer;

an insulating layer disposed on the semiconductor stack;

an electrode layer disposed on the insulating layer and the semiconductor stack; and

a reflective insulating layer disposed on the electrode layer, the reflective insulating layer comprising through-holes through which portions of the electrode layer are exposed.

2. The light emitting device of claim 1, further comprising:

a first electrode disposed on the exposed portion of the electrode layer and on the reflective insulating layer.

3. The light emitting device of claim 2, wherein the first electrode is overlapped with the insulating layer.

4. The light emitting device of claim 2, wherein the first electrode is electrically connected to the second compound semiconductor layer.

5. The light emitting device of claim 1, further comprising:

at least one second electrode electrically connected to the first compound semiconductor layer.

6. The light emitting device of claim 1, further comprising second electrodes electrically connected to the first compound semiconductor layer and disposed to be parallel to each other in a first direction.

7. The light emitting device of claim 1, wherein the insulating layer is covered by the electrode layer.

8. The light emitting device of claim 1, wherein the insulating layer is disposed between the second compound semiconductor layer and the electrode layer.

9. The light emitting device of claim 1, wherein one of the through-holes is disposed in a center region of the reflective insulating layer overlapped with one of the second electrodes.

10. The light-emitting diode of claim 1, wherein the electrode layer comprises a metal or a conductive metal oxide.

11. The light-emitting diode of claim 1, wherein the electrode layer comprises at least one of Ni, Au, indium tin oxide (ITO), ZnO, Ag, Pt, Pd, and Rh.

12. The light-emitting diode of claim 1, wherein the semiconductor stack comprises an opening.

13. The light-emitting diode of claim 1, wherein the reflective insulating layer comprises a distributed Bragg reflector (DBR).

14. The light-emitting diode of claim 1, wherein the first compound semiconductor layer comprises first protrusions.

15. The light-emitting diode of claim 14, further comprising second protrusions comprising a dielectric material, the second protrusions being disposed on the first protrusions.

16. The light-emitting diode of claim 14, wherein the first protrusions are pyramidal.

17. The light-emitting diode of claim 15, wherein the second protrusions are conical.

18. The light-emitting diode of claim 14, further comprising a second electrode disposed on a planar portion of the semiconductor stack that extends above the first protrusions.

19. A light emitting diode (LED), comprising:

a semiconductor stack comprising a first compound semiconductor layer, a second compound semiconductor layer, and an active layer disposed between the first compound semiconductor layer and the second compound semiconductor layer;

a first electrode electrically connected to the second compound semiconductor layer;

a second electrode electrically connected to the first compound semiconductor layer;

an insulating layer disposed between the first electrode and the second compound semiconductor layer;

an electrode layer covering the insulating layer; and

a reflective insulating layer disposed on the electrode layer, the reflective insulating layer comprising through-holes through which portions of the electrode layer are exposed.

20. The light-emitting diode of claim 19, wherein one of the through-holes is disposed in a center region of the reflective insulating layer overlapped with the second electrode.