Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
First Claim
1. A lighting emitting die, comprising:
- a light emitting structure;
a silicon substrate spaced apart from the light emitting structure; and
a bonding stack between the light emitting structure and the silicon substrate, the bonding stack mechanically coupling the light emitting structure to the silicon substrate, wherein the bonding stack includesa barrier material on the light emitting structure,a bonding material spaced apart from the barrier material, the bonding material containing nickel (Ni),a mirror material directly between the barrier material and the bonding material,a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material,a first bonding portion on a surface of the light emitting structure, anda second bonding portion on a sidewall of the light emitting structure.
8 Assignments
0 Petitions
Accused Products
Abstract
Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
16 Citations
20 Claims
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1. A lighting emitting die, comprising:
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a light emitting structure; a silicon substrate spaced apart from the light emitting structure; and a bonding stack between the light emitting structure and the silicon substrate, the bonding stack mechanically coupling the light emitting structure to the silicon substrate, wherein the bonding stack includes a barrier material on the light emitting structure, a bonding material spaced apart from the barrier material, the bonding material containing nickel (Ni), a mirror material directly between the barrier material and the bonding material, a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material, a first bonding portion on a surface of the light emitting structure, and a second bonding portion on a sidewall of the light emitting structure. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A lighting emitting device, comprising:
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a light emitting structure having an opening and a sidewall in the opening; a silicon substrate spaced apart from the light emitting structure; a bonding stack between the light emitting structure and the silicon substrate, wherein the bonding stack has a first portion on a surface outside of the opening of the light emitting structure, and a second portion on at least a portion of the sidewall in the opening, and wherein the bonding stack includes— a barrier material over the light emitting structure, a bonding material comprising nickel (Ni), a mirror material spacing the barrier material apart from the bonding material, and a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A lighting emitting die, comprising:
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a light emitting structure having an opening and a sidewall in the opening; a conductive material on a portion of the light emitting structure that is outside of the opening; a silicon substrate spaced apart from the light emitting structure; and a bonding stack between the light emitting structure and the silicon substrate, the bonding stack mechanically coupling the light emitting structure to the silicon substrate, wherein the bonding stack includes— a barrier material on the light emitting structure, a bonding material spaced apart from the barrier material, the bonding material containing nickel (Ni), a mirror material directly between the barrier material and the bonding material, a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material, a first bonding portion on the conductive material, and a second bonding portion on the sidewall of the light emitting structure. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification