Semiconductor memory having both volatile and non-volatile functionality and method of operating
First Claim
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1. A method of operating a semiconductor memory cell having a fin structure, said method comprising:
- providing the memory cell to have a floating body for storing data as volatile memory and a floating gate or trapping layer for storing data as non-volatile memory;
and transferring a state of said non-volatile memory to said volatile memory based on said state of said non-volatile memory state when power is restored to the memory cell,wherein said transferring said non-volatile memory state to said volatile memory is a non-algorithmic process.
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Abstract
Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.
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16 Claims
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1. A method of operating a semiconductor memory cell having a fin structure, said method comprising:
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providing the memory cell to have a floating body for storing data as volatile memory and a floating gate or trapping layer for storing data as non-volatile memory; and transferring a state of said non-volatile memory to said volatile memory based on said state of said non-volatile memory state when power is restored to the memory cell, wherein said transferring said non-volatile memory state to said volatile memory is a non-algorithmic process. - View Dependent Claims (2, 3, 4, 5)
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6. A method of operating a semiconductor memory cell having a fin structure comprising:
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a floating body region configured to be charged to a level indicative of a state of the memory cell to store the state as volatile memory; and a floating gate or trapping layer insulated from said floating body region; the method comprising; restoring power to said memory cell; and charging said floating body region based on charge stored in said floating gate or trapping layer upon restoration of power to said memory cell, wherein said charging said floating body region based on charge stored in said floating gate or trapping layer is a non-algorithmic process. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A method of operating a semiconductor memory cell having a fin structure comprising:
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a floating body region configured to be charged to a level indicative of a state of the memory cell to store the state as volatile memory; and a floating gate or trapping layer insulated from said floating body region; the method comprising transferring said volatile memory state to the floating gate or trapping layer when power to the cell is interrupted; wherein electron injection into said floating gate or trapping layer occurs when said volatile memory is in a first state, and wherein no electron injection into said floating gate or trapping layer occurs when said memory cell is in a second state, wherein said transferring is a non-algorithmic process. - View Dependent Claims (13, 14, 15, 16)
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Specification