Horizontal gate all around device isolation
First Claim
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1. A method of forming a semiconductor device, comprising:
- forming a superlattice structure on a substrate, wherein the superlattice structure comprises;
a first material layer;
a second material layer; and
a third material layer;
patterning the superlattice structure;
etching the superlattice structure and the substrate;
performing a liner deposition process to form a liner on the superlattice structure;
performing a shallow trench isolation process to deposit an oxide material layer on the substrate; and
performing an annealing process to oxidize at least one of the first material layer, the second material layer, or the third material layer to form a buried oxide layer.
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Abstract
Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. The different materials may be silicon containing materials and one or more III/V materials. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.
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Citations
20 Claims
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1. A method of forming a semiconductor device, comprising:
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forming a superlattice structure on a substrate, wherein the superlattice structure comprises; a first material layer; a second material layer; and a third material layer; patterning the superlattice structure; etching the superlattice structure and the substrate; performing a liner deposition process to form a liner on the superlattice structure; performing a shallow trench isolation process to deposit an oxide material layer on the substrate; and performing an annealing process to oxidize at least one of the first material layer, the second material layer, or the third material layer to form a buried oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a semiconductor device, comprising:
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forming a superlattice structure on a substrate, wherein the superlattice structure comprises; a silicon material layer; a low germanium content silicon germanium material layer; and a high germanium content silicon germanium material layer; patterning the superlattice structure; etching the superlattice structure and the substrate; performing a liner deposition process to form an oxynitride liner on the superlattice structure; performing a shallow trench isolation process to deposit an oxide material layer on the substrate; and performing an annealing process to oxidize the high germanium content silicon germanium material layer to form a buried oxide layer. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A method of forming a semiconductor device, comprising:
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forming a superlattice structure on a substrate, wherein the superlattice structure comprises; a silicon material layer; a first silicon germanium material layer comprising about 30% germanium; and a second silicon germanium material layer comprising about 70% germanium, wherein the silicon material layer, the first silicon germanium material layer, and the second silicon germanium layer are disposed in a stacked arrangement; performing a liner deposition process to form an oxynitride liner on the superlattice structure; performing a shallow trench isolation process to deposit an oxide material layer on the substrate; performing an annealing process to oxidize the second silicon germanium material layer to form a buried oxide layer; and performing a shallow trench isolation recess process. - View Dependent Claims (19, 20)
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Specification