System and apparatus for efficient deposition of transparent conductive oxide
First Claim
Patent Images
1. A substrate processing system comprising:
- a substrate processing chamber having one or more sidewalls that at least partially define a substrate processing region and extend away from a bottom wall of the substrate processing chamber at an obtuse angle;
a source material holder configured to hold a source material within the substrate processing region;
a plasma gun operatively coupled to introduce a plasma beam into the substrate processing region;
one or more magnets operatively arranged to generate a magnetic field that guides the plasma beam to the source material holder;
a substrate carrier configured to hold one or more substrates within the substrate processing region; and
a substrate transport mechanism configured to move the substrate carrier through the substrate processing region during a substrate deposition process.
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Abstract
A substrate processing system that includes a substrate processing chamber having one or more sidewalls that at least partially define a substrate processing region and extend away from a bottom wall of the substrate processing chamber at an obtuse angle; a source material holder configured to hold a source material within the substrate processing region; a plasma gun operatively coupled to introduce a plasma beam into the substrate processing region; one or more magnets operatively arranged to generate a magnetic field that guides the plasma beam to the source material holder; and a substrate carrier configured to hold one or more substrates within the substrate processing region.
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Citations
25 Claims
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1. A substrate processing system comprising:
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a substrate processing chamber having one or more sidewalls that at least partially define a substrate processing region and extend away from a bottom wall of the substrate processing chamber at an obtuse angle; a source material holder configured to hold a source material within the substrate processing region; a plasma gun operatively coupled to introduce a plasma beam into the substrate processing region; one or more magnets operatively arranged to generate a magnetic field that guides the plasma beam to the source material holder; a substrate carrier configured to hold one or more substrates within the substrate processing region; and a substrate transport mechanism configured to move the substrate carrier through the substrate processing region during a substrate deposition process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A substrate processing system comprising:
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a substrate processing chamber having one or more sidewalls that at least partially define a substrate processing region and extend away from a bottom wall of the substrate processing chamber at an obtuse angle; a source material holder configured to hold a source material within the substrate processing region; a plasma gun operatively coupled to introduce a plasma beam into the substrate processing region; one or more magnets operatively arranged to generate a magnetic field that guides the plasma beam to the source material holder; and a substrate carrier configured to hold one or more substrates within the substrate processing region; wherein the substrate processing region of the chamber is at least 100% wider than it is long and the one or more angled walls include first and second opposing walls that define a length of the substrate processing chamber within the substrate processing region.
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13. A substrate processing system comprising:
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a substrate processing chamber having one or more sidewalls that at least partially define a substrate processing region; a plurality of source material holders positioned within the substrate processing region, each configured to hold source material; a plurality of plasma guns corresponding to the plurality of source material holders, each plasma gun in the plurality of plasma guns being operatively coupled to introduce a plasma beam into the substrate processing region; a plurality of magnets operatively arranged to generate magnetic fields that, for each plasma beam generated by a plasma gun in the plurality of plasma guns, directs the plasma beam to its corresponding source material holder; a substrate carrier configured to hold a plurality of substrates; and a substrate transport mechanism configured to move the substrate carrier through the substrate processing chamber such that the plurality of substrates are moved through the substrate processing region. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of depositing a layer over a plurality of substrates with a reactive plasma deposition process, the method comprising:
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holding source material for the reactive plasma deposition process in a source material holder positioned within a substrate processing chamber; generating a plasma beam from a plasma gun; ionizing the source material by directing the plasma with a plurality of magnets to bombard the source material and generate ionized source material within a substrate processing region of the substrate processing chamber; transporting the plurality of substrates through the substrate processing region of a substrate processing chamber in a substrate carrier to deposit the source material over the plurality of substrates, wherein the substrate carrier comprises a plurality of interconnected panels that enter the substrate processing chamber in a substantially flat arrangement and the plurality of interconnected panels are formed into a dome-shaped arrangement prior to passing through the substrate processing region. - View Dependent Claims (23, 24, 25)
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Specification