Power semiconductor package with a common conductive clip

• US 9,461,022 B2
• Filed: 05/27/2015
• Issued: 10/04/2016
• Est. Priority Date: 01/14/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Inventors: Cho, Eung San, Cheah, Chuan, Sawle, Andrew N.
• Primary Examiner(s): MENZ, DOUGLAS M
• Application Number:
  US14/722,974
• Publication Number:
  US 20150279821A1
• Time in Patent Office: 496 Days
• Field of Search: 257/288, 257/666
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/33181 On opposite sides of the body
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/40095 Kinked
• CPC Class Codes: H01L 2224/40245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48106 the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/73215 Layer and wire connectors
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/84801 Soldering or alloying
• CPC Class Codes: H01L 23/492 Bases or plates or solder therefor
• CPC Class Codes: H01L 23/49524 the additional leads being a tape carrier or flat leads
• CPC Class Codes: H01L 23/49537 Plurality of lead frames mounted in one device
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/34 : Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/36 : Structure, shape, material or disposition of the strap connectors prior to the connecting process
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/41 : of a plurality of strap connectors
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/074 : Stacked arrangements of non-apertured devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to a common conductive clip, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the common conductive clip, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. The control and sync transistors are stacked on opposite sides of the common conductive clip with the common conductive clip electrically and mechanically coupling the control source with the sync drain, where the common conductive clip has a conductive leg for providing electrical and mechanical connection to an output terminal leadframe.

Claims

1. A power semiconductor package comprising:

a control transistor having a control drain for connection to a high voltage input, a control source coupled to a common conductive clip, and a control gate;

a sync transistor having a sync drain for connection to said common conductive clip, a sync source coupled to a low voltage input, and a sync gate;

said control and sync transistors being situated on opposite sides of said common conductive clip, said common conductive clip coupling said control source with said sync drain.

2. The power semiconductor package of claim 1, wherein a conductive web of said common conductive clip provides said coupling of said control source with said sync drain.

3. The power semiconductor package of claim 1, wherein a conductive leg of said common conductive clip is of a thickness greater than that of said control transistor.

4. The power semiconductor package of claim 1, wherein a control drain leadframe provides connection for said control drain.

5. The power semiconductor package of claim 1, wherein a conductive source clip provides connection between said sync source and a sync source leadframe.

6. The power semiconductor package of claim 5, wherein said conductive source clip comprises a source clip leg that is of a thickness greater than that of said sync transistor.

7. The power semiconductor package of claim 1, wherein a conductive source clip comprises a source clip web that is connected to said sync source and including a source clip leg that is connected to a sync source leadframe.

8. The power semiconductor package of claim 1, wherein a conductive source clip is connected to said sync source at a topside of said stacked half-bridge package.

9. The power semiconductor package of claim 1, wherein bottom surfaces of a sync source leadframe and a control drain leadframe are substantially flush with one another.

10. The power semiconductor package of claim 1, wherein top surfaces of a sync source leadframe and a control drain leadframe are substantially flush with one another.

11. The power semiconductor package of claim 1, wherein at least one control gate bondwire provides connection for said control gate.

12. The power semiconductor package of claim 11, wherein said at least one control gate bondwire provides connection between said control gate and a control gate leadframe.

13. The power semiconductor package of claim 1, wherein at least one sync gate bondwire provides connection for said sync gate.

14. The power semiconductor package of claim 13, wherein said at least one sync gate bondwire provides connection between said sync gate and a sync gate leadframe.

15. The power semiconductor package of claim 1, wherein said sync source comprises a plurality of sync source pads.

16. The power semiconductor package of claim 1, wherein said control transistor has top and bottom surfaces, said control drain being on said bottom surface and said control source and said control gate being on said top surface.

17. The power semiconductor package of claim 1, wherein said sync transistor has top and bottom surfaces, said sync drain being on said bottom surface and said sync source and said sync gate being on said top surface.

18. The power semiconductor package of claim 1, wherein respective bottom surfaces of a sync source leadframe, a control drain leadframe, a sync gate leadframe, and a control gate leadframe are substantially flush with one another.

19. The power semiconductor package of claim 1, wherein a sync source leadframe and a control drain leadframe are of substantially a same thickness.

20. The power semiconductor package of claim 1, wherein a sync source leadframe, a control drain leadframe, a sync gate leadframe, and a control gate leadframe are of substantially a same thickness.