Methods of fabricating semiconductor devices including multiple patterning
First Claim
1. A method of fabricating a semiconductor device, the method comprising:
- forming a stopper layer, a lower hard mask layer, an intermediate hard mask layer, and an upper hard mask pattern on a substrate;
forming first spacer patterns on sidewalls of the upper hard mask pattern;
removing the upper hard mask pattern;
selectively etching the intermediate hard mask layer using the first spacer patterns as an etching mask to form intermediate hard mask patterns;
removing the first spacer patterns;
forming second spacer patterns on sidewalls of the intermediate hard mask patterns;
removing the intermediate hard mask patterns;
selectively etching the lower hard mask layer using the second spacer patterns as an etching mask to form lower hard mask patterns;
removing the second spacer patterns;
forming a patterning mask pattern that exposes a cell area and covers a common source line area on the lower hard mask patterns and the stopper layer;
selectively etching the stopper layer using the lower hard mask patterns and the patterning mask pattern as etching masks to form stopper patterns; and
removing the patterning mask pattern.
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Abstract
Methods of fabricating semiconductor devices may include forming a stopper layer, a lower hard mask layer, an intermediate hard mask layer, and an upper hard mask pattern on a substrate, forming first spacer patterns on sidewalls of the upper hard mask pattern, selectively etching the intermediate hard mask layer using the first spacer patterns as an etching mask, forming second spacer patterns on sidewalls of the etched intermediate hard mask layer, selectively etching the lower hard mask layer using the etched second spacer layer as an etching mask, forming a patterning mask pattern that exposes a cell area and covers a common source line area on the etched lower hard mask layer and the stopper layer, and selectively etching the stopper layer using the etched lower hard mask layer and the patterning mask pattern as etching masks to form stopper patterns.
14 Citations
20 Claims
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1. A method of fabricating a semiconductor device, the method comprising:
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forming a stopper layer, a lower hard mask layer, an intermediate hard mask layer, and an upper hard mask pattern on a substrate; forming first spacer patterns on sidewalls of the upper hard mask pattern; removing the upper hard mask pattern; selectively etching the intermediate hard mask layer using the first spacer patterns as an etching mask to form intermediate hard mask patterns; removing the first spacer patterns; forming second spacer patterns on sidewalls of the intermediate hard mask patterns; removing the intermediate hard mask patterns; selectively etching the lower hard mask layer using the second spacer patterns as an etching mask to form lower hard mask patterns; removing the second spacer patterns; forming a patterning mask pattern that exposes a cell area and covers a common source line area on the lower hard mask patterns and the stopper layer; selectively etching the stopper layer using the lower hard mask patterns and the patterning mask pattern as etching masks to form stopper patterns; and removing the patterning mask pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of fabricating a semiconductor device, the method comprising:
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forming a stopper layer, a lower hard mask layer, an intermediate hard mask layer, and an upper hard mask layer on a substrate; forming a first patterning mask pattern that has an elongated rectangular shape on the upper hard mask layer; etching the upper hard mask layer using the first patterning mask pattern as an etching mask to form an upper hard mask pattern; forming first spacer patterns on sidewalls of the upper hard mask pattern; removing the upper hard mask pattern; selectively etching the intermediate hard mask layer using the first spacer patterns as an etching mask to form intermediate hard mask patterns; removing the first spacer patterns; forming second spacer patterns on sidewalls of the intermediate hard mask patterns; removing the intermediate hard mask patterns; selectively etching the lower hard mask layer using the second spacer patterns as an etching mask to form lower hard mask patterns; removing the second spacer patterns; forming a second patterning mask pattern that exposes a cell area and covers a common source line area on the lower hard mask patterns and the stopper layer; and selectively etching the stopper layer using the lower hard mask patterns and the second patterning mask pattern as etching masks to form stopper patterns.
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16. A method of fabricating a semiconductor device, the method comprising:
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forming an etch stop layer, a lower hard mask layer that has an etch selectivity with respect to the etch stop layer, a first intermediate hard mask layer that has an etch selectivity with respect to the lower hard mask layer, a second intermediate hard mask layer that has an etch selectivity with respect to the first intermediate hard mask layer, a first upper hard mask layer that has an etch selectivity with respect to the second intermediate hard mask layer, and a second upper hard mask layer that has an etch selectivity with respect to the first upper hard mask layer on a substrate; forming a first patterning mask pattern on the second upper hard mask layer; etching, in a first etch process, the first and second upper hard mask layers using the first patterning mask pattern as an etching mask to expose portions of the second intermediate hard mask layer; removing the first patterning mask pattern; forming a first spacer layer on portions of the first and second upper hard mask layers that remain after the first etch process and on the portions of the second intermediate hard mask layer that are exposed; partially etching the first spacer layer and removing the second upper hard mask layer in a second etch process to expose the first upper hard mask layer and to form first spacer patterns on sidewalls of the first upper hard mask layer; removing the first upper hard mask layer from between the first spacer patterns; etching, in a third etch process, the first and second intermediate hard mask layers using the first spacer patterns as an etching mask to expose portions of the lower hard mask layer; removing the first spacer patterns; forming a second spacer layer on portions of the first and second intermediate hard mask layers that remain after the third etch process and on the portions of the lower hard mask layer that are exposed; partially etching the second spacer layer and removing the second intermediate hard mask layer in a fourth etch process to expose the first intermediate hard mask layer and to form second spacer patterns on sidewalls of the first intermediate hard mask layer; removing the first intermediate hard mask layer from between the second spacer patterns; etching, in a fifth etch process, the lower hard mask layer using the second spacer patterns as an etching mask to expose portions of the etch stop layer; and removing the second spacer patterns. - View Dependent Claims (17, 18, 19, 20)
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Specification