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Cubic phase, nitrogen-based compound semiconductor films

  • US 9,461,112 B1
  • Filed: 08/14/2015
  • Issued: 10/04/2016
  • Est. Priority Date: 01/21/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a plurality of grooves within a semiconductor substrate;

    a mask structure comprising a plurality of openings therein over the semiconductor substrate wherein the plurality of opening are aligned with the plurality of grooves, the mask structure comprising a single layer;

    an epitaxial layer in each of the plurality of grooves in the semiconductor substrate, wherein the epitaxial layer comprises hexagonal phase material and cubic phase material, the cubic phase material extending through each of the plurality of openings in the mask structure, growth of the hexagonal phase material having been blocked by the mask structure in a manner so that the hexagonal phase material does not extend above the mask structure.

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