Device and method for fabricating thin semiconductor channel and buried strain memorization layer
First Claim
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1. A method for inducing stress in a semiconductor layer, comprising:
- forming a substrate structure, the substrate structure comprising a semiconductor base layer, a buried dielectric layer formed on the semiconductor base layer, and a semiconductor channel layer formed on the buried dielectric layer;
ion implanting a dopant through an uppermost surface of the semiconductor channel layer and the buried dielectric layer into the semiconductor base layer to form an amorphized material region only in a portion of the semiconductor base layer that is in direct contact with the buried dielectric layer;
depositing a stress layer after the amorphized region is formed, wherein the stress layer is directly on a surface of the semiconductor channel layer that is opposite a surface of the semiconductor channel layer that is in direct contact with the buried dielectric layer;
annealing the substrate structure to memorize stress in a portion of the semiconductor base layer that is in direct contact with the buried dielectric layer by recrystallizing the amorphized material, wherein the memorized stress of the semiconductor base layer induces stress in the semiconductor channel layer;
removing the stress layer; and
forming a gate structure after removing the stress layer, wherein the gate structure is formed on the surface of the semiconductor channel layer that is opposite the surface of the semiconductor channel layer that is in direct contact with the buried dielectric layer, and wherein the gate structure includes an electrode layer and a gate dielectric layer that are separate layers from the substrate structure.
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Abstract
A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer and processing the second semiconductor layer to form an amorphized material. A stress layer is deposited on the first semiconductor layer. The wafer is annealed to memorize stress in the second semiconductor layer by recrystallizing the amorphized material.
32 Citations
21 Claims
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1. A method for inducing stress in a semiconductor layer, comprising:
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forming a substrate structure, the substrate structure comprising a semiconductor base layer, a buried dielectric layer formed on the semiconductor base layer, and a semiconductor channel layer formed on the buried dielectric layer; ion implanting a dopant through an uppermost surface of the semiconductor channel layer and the buried dielectric layer into the semiconductor base layer to form an amorphized material region only in a portion of the semiconductor base layer that is in direct contact with the buried dielectric layer; depositing a stress layer after the amorphized region is formed, wherein the stress layer is directly on a surface of the semiconductor channel layer that is opposite a surface of the semiconductor channel layer that is in direct contact with the buried dielectric layer; annealing the substrate structure to memorize stress in a portion of the semiconductor base layer that is in direct contact with the buried dielectric layer by recrystallizing the amorphized material, wherein the memorized stress of the semiconductor base layer induces stress in the semiconductor channel layer; removing the stress layer; and forming a gate structure after removing the stress layer, wherein the gate structure is formed on the surface of the semiconductor channel layer that is opposite the surface of the semiconductor channel layer that is in direct contact with the buried dielectric layer, and wherein the gate structure includes an electrode layer and a gate dielectric layer that are separate layers from the substrate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for inducing stress in a semiconductor layer, comprising:
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forming a substrate structure, the substrate structure comprising a semiconductor base layer, a buried dielectric layer formed on the semiconductor base layer, and a semiconductor channel layer formed on the buried dielectric layer; forming a gate structure for a transistor device on the semiconductor channel layer, the semiconductor channel layer including a channel region; implanting ions selected from the group consisting of Ar, N, Xe and a combination thereof through an uppermost surface of the semiconductor channel layer and the buried dielectric layer into the semiconductor base layer to form an amorphized material only in areas of the semiconductor base layer not protected by the gate structure, wherein a sidewall of the gate structure is aligned with an inner edge of the amorphized material; depositing a stress layer on the gate structure and the semiconductor channel layer; and
annealing the substrate structure to memorize stress in the semiconductor base layer by recrystallizing the amorphized material to impart stress from a direction opposite a side of the semiconductor channel layer including the channel region. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification