Light-emitting element

• US 9,461,208 B2
• Filed: 02/23/2016
• Issued: 10/04/2016
• Est. Priority Date: 12/07/2012
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Hon, Schang-Jing, Chen, Chao-Hsing, Ko, Tsun-Kai, Shen, Chien-Fu, Wang, Jia-Kuen, Chen, Hung-Che
• Primary Examiner(s): Dang, Trung Q
• Application Number:
  US15/050,917
• Publication Number:
  US 20160172543A1
• Time in Patent Office: 224 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising multiple contact areas and multiple extension areas, wherein the multiple contact areas are physically separated from one another; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the first conductive part and the second conductive part each comprises a concave-convex profile.

Claims

1. A light-emitting element, comprising:

a light-emitting semiconductor stack comprising;

a first semiconductor layer;

a second semiconductor layer on the first semiconductor layer; and

a light-emitting layer between the first semiconductor layer and the second semiconductor layer;

a first electrode comprising multiple extension areas; and

a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the first conductive part and the second conductive part each comprises a concave-convex profile.

2. The light-emitting element according to claim 1, wherein the first electrode comprises multiple contact areas, wherein the multiple contact areas are physically separated from one another.

3. The light-emitting element according to claim 2, wherein the multiple contact areas are covered by the first conductive part.

4. The light-emitting element according to claim 2, wherein the first electrode comprises a connecting area connecting the multiple contact areas.

5. The light-emitting element according to claim 1, wherein the multiple extensions are formed beyond a projected area of the second conductive part and not covered by the first conductive part.

6. The light-emitting element according to claim 1, wherein the first conductive part and the second conductive part comprise a distance there between, and the distance is at least 50 μ

m.

7. The light-emitting element according to claim 1, further comprising a second electrode on the second semiconductor layer, wherein the second electrode comprises indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminium zinc oxide (AZO), zinc tin oxide (ZTO), zinc oxide (ZnO), gallium doped zinc oxide(GZO), indium zinc oxide (IZO).

8. The light-emitting element according to claim 7, further comprising a reflective layer on the second electrode and/or a barrier layer on the reflective layer.

9. The light-emitting element according to claim 8, wherein the reflective layer is formed between the barrier layer and the second electrode.

10. The light-emitting element according to claim 8, wherein the reflective layer and the barrier layer comprise metal material.

11. The light-emitting element according to claim 1, wherein one of the multiple extension areas comprises an upper face, a lower face opposite to the upper face, a side face between the upper face and the lower face, and an angle between the side face and the lower face, wherein the angle ranges from about 15 degrees to 70 degrees.

12. The light-emitting element according to claim 8, further comprising a first protection layer on the light-emitting semiconductor stack, and a second protection layer comprising a first through hole on one of the multiple contact areas of the first electrode and a second through hole on the barrier layer.

13. The light-emitting element according to claim 12, wherein the first protection layer or the second protection layer comprises insulating material.

14. The light-emitting element according to claim 12, wherein the first conductive part is formed in the first through hole and extended onto a top surface of the second protection layer and the second conductive part is formed in the second through hole and extended onto the top surface of the second protection layer.

15. The light-emitting element according to claim 12, wherein the multiple extensions of the first electrode are covered by the second protection layer.

16. The light-emitting element according to claim 8, wherein part of the barrier is between the first protection layer and the second protection layer.

17. The light-emitting element according to claim 1, wherein an end of each of the multiple extensions is formed beyond the projected area of the second conductive part and not covered by the first conductive part.

18. A light-emitting element, comprising:

a light-emitting semiconductor stack comprising;

a first semiconductor layer;

a second semiconductor layer on the first semiconductor layer; and

a light-emitting layer between the first semiconductor layer and the second semiconductor layer;

a first electrode comprising multiple extension areas;

a first protection layer on the second semiconductor layer;

a reflective layer on the first protection layer;

a second protection layer on the reflective layer; and

a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein part of the reflective layer is between the first protection layer and the second protection layer.

19. The light-emitting element according to claim 18, wherein the first electrode comprises multiple contact areas, wherein the multiple contact areas are physically separated from one another.

20. The light-emitting element according to claim 18, wherein the multiple contact areas are covered by the first conductive part.