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MEMS capacitive pressure sensors

  • US 9,463,975 B2
  • Filed: 04/13/2015
  • Issued: 10/11/2016
  • Est. Priority Date: 07/03/2013
  • Status: Active Grant
First Claim
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1. A MEMS capacitive pressure sensor, comprising:

  • a substrate having a first region and a second region;

    a first dielectric layer formed on one surface of the substrate;

    a first electrode layer formed on the first dielectric layer;

    a second dielectric layer formed on the first electrode layer and having a plurality of first openings;

    a plurality of conductive sidewalls connecting with the first electrode layer on sidewalls of the first openings;

    a second electrode layer with a portion formed on the second dielectric layer in the second region and the rest suspended over the conductive sidewalls in the first region, causing a chamber between the conductive sidewalls and the second electrode layer;

    a third dielectric layer on the second electrode layer exposing a portion of the second electrode layer in the device region; and

    a fourth dielectric layer utilized as an etching stop layer on the second electrode layer.

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