MEMS fabrication process with two cavities operating at different pressures

• US 9,463,976 B2
• Filed: 06/27/2014
• Issued: 10/11/2016
• Est. Priority Date: 06/27/2014
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Steimle, Robert F., Winebarger, Paul M.
• Primary Examiner(s): PERT, EVAN T
• Application Number:
  US14/317,101
• Publication Number:
  US 20150375995A1
• Time in Patent Office: 837 Days
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 1/00253 Processes for integrating an electronic processing unit with a micromechanical structure not provided for in B81C1/0023 - B81C1/00246

Abstract

A method and apparatus are described for fabricating a high aspect ratio MEMS sensor device having multiple vertically-stacked inertial transducer elements (101B, 110D) formed in different layers of a multi-layer semiconductor structure (100) and one or more cap devices (200, 300) bonded to the multi-layer semiconductor structure (100) to protect any exposed inertial transducer element from ambient environmental conditions.

Claims

1. A MEMS sensor device, comprising:

a plurality of vertically-stacked inertial transducer elements, each formed in different layer of a multi-layer semiconductor structure forming a single integrated circuit device; and

a cap device bonded to the multi-layer semiconductor structure to protect at least a first exposed inertial transducer element from ambient environmental conditions.

2. The MEMS sensor device of claim 1, where the plurality of vertically-stacked inertial transducer elements comprises:

a first MEMS sensor formed in a first semiconductor layer; and

a second MEMS sensor formed in a second semiconductor layer that is stacked over the first semiconductor layer.

3. The MEMS sensor device of claim 2, where the first MEMS sensor comprises a gyroscope sensor formed in a polycrystalline semiconductor layer.

4. The MEMS sensor device of claim 3, where the second MEMS sensor comprises a linear accelerometer sensor formed in a monocrystalline semiconductor layer that is stacked over the polycrystalline semiconductor layer.

5. The MEMS sensor device of claim 2, where the cap device comprises:

a first routing cap device bonded to an exposed side of the first semiconductor layer, where the first routing cap device comprises a first sensor cavity that is aligned with the first MEMS sensor; and

a second cap device bonded to an exposed side of the second semiconductor layer, where the second cap device comprises a second sensor cavity that is aligned with the second MEMS sensor.

6. The MEMS sensor device of claim 5, where the first routing cap device is bonded to the exposed side of the first semiconductor layer with a high temperature eutectic seal ring bonding structure to form a vacuum in the first sensor cavity.

7. The MEMS sensor device of claim 6, where the eutectic seal ring bonding structure comprises an aluminum-germanium seal ring bonding structure.

8. The MEMS sensor device of claim 5, where the first routing cap device is bonded to the exposed side of the first semiconductor layer using thermocompression bonding.

9. The MEMS sensor device of claim 5, where the second cap device is bonded to the exposed side of the second semiconductor layer with a low temperature frit bonding structure.

10. The MEMS sensor device of claim 8, where the second cap device is bonded to the exposed side of the second semiconductor layer with an electrically conductive bonding structure to electrically connect the second cap device to the multi-layer semiconductor structure.

11. A method for fabricating a transducer comprising:

providing a MEMS wafer structure comprising a first semiconductor substrate layer and a second semiconductor layer that is formed over the first semiconductor substrate layer and etched to form a first MEMS transducer element and surrounding frame support elements;

forming a first patterned metal layer on a first surface of the second semiconductor layer to define part of a first sealing ring structure on the surrounding frame support elements;

providing a first cap wafer structure comprising a second substrate layer and a second patterned metal layer formed on a first surface of the second substrate layer;

placing the MEMS wafer structure on the first cap wafer structure so that the first and second patterned metal layers are aligned;

bonding the MEMS wafer structure to the first cap wafer structure using a first bonding process to form a bond between the first and second patterned metal layers to thereby form the first sealing ring structure on the surrounding frame support elements to surround the first MEMS transducer element;

etching the first semiconductor substrate layer with a deep reactive ion etch process to form a second MEMS transducer element and surrounding frame support elements from the first semiconductor substrate layer;

providing a second cap wafer structure comprising a third substrate layer having a sensor cavity;

placing the second cap wafer structure on the MEMS wafer structure so that the sensor cavity and second MEMS transducer element are aligned; and

bonding the second cap wafer structure to the MEMS wafer structure using a second bonding process.

12. The method of claim 11, where providing the MEMS wafer structure comprises providing a first monocrystalline silicon substrate layer over which is formed a second polysilicon layer comprising a first high aspect ratio proof mass transducer element and surrounding frame support elements.

13. The method of claim 12, where forming the first patterned metal layer comprises forming a patterned germanium layer on the second polysilicon layer.

14. The method of claim 13, where providing the first cap wafer structure comprises providing a monocrystalline silicon substrate layer or application specific integrated circuit wafer structure over which the second patterned metal layer is formed as a patterned aluminum layer.

15. The method of claim 14, where bonding the MEMS wafer structure to the first cap wafer structure comprises forming an aluminum-germanium eutectic bond between the first and second patterned metal layers in a vacuum environment, thereby sealing the first MEMS transducer element in a vacuum with the first sealing ring structure.

16. The method of claim 11, where etching the first semiconductor substrate layer comprises etching a monocrystalline silicon substrate layer with a deep reactive ion etch process to form a high aspect ratio sensing subassembly from the monocrystalline silicon substrate layer prior to bonding the second cap wafer structure to the MEMS wafer structure.

17. The method of claim 11, where second bonding process comprises a low temperature frit bonding process for bonding the second cap wafer structure to the MEMS wafer structure.

18. The method of claim 11, where bonding the MEMS wafer structure to the first cap wafer structure comprises using a thermocompression bonding process to form the bond between the first and second patterned metal layers.

19. A high aspect ratio transducer, comprising:

a first routed cap structure comprising a substrate, a plurality of first metal interconnect bond spacer structures, and a high vacuum cavity formed in the substrate to define a first inertial transducer space;

a first polycrystalline semiconductor substrate structure attached to the plurality of first metal interconnect bond spacer structures and comprising a first high aspect ratio proof mass element which is aligned with the first inertial transducer space, the first polycrystalline semiconductor substrate structure comprising;

a first surface on which a second patterned metallic layer is formed and bonded to the plurality of first metal interconnect bond spacer structures, and

a second surface on which a plurality of spacer structures are formed to define one or more out-of-plane sensing electrode spaces;

a second monocrystalline semiconductor substrate structure attached to the plurality of spacer structures and comprising a second high aspect ratio proof mass element, the second monocrystalline semiconductor substrate structure comprising;

a first surface attached to one or more patterned bonding layers, and

a second surface on which one or more out-of-plane sensing electrodes are formed in alignment with the one or more out-of-plane sensing electrode spaces; and

a second cap structure attached to the one or more patterned bonding layers and comprising a substrate in which a cavity is formed to define a second inertial transducer space which is aligned with the second inertial transducer.

20. The high aspect ratio transducer of claim 19, where the first high aspect ratio proof mass element comprises a MEMS proof mass element of a gyroscope sensor formed in the high vacuum cavity formed with eutectic seal bond between the plurality of first metal interconnect bond spacer structures and the second patterned metallic layer, and where the second high aspect ratio proof mass element comprises a MEMS proof mass element of a linear accelerator sensor form in the second inertial transducer space.