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Capacitive pressure sensors for high temperature applications

  • US 9,464,950 B2
  • Filed: 02/20/2014
  • Issued: 10/11/2016
  • Est. Priority Date: 11/15/2013
  • Status: Active Grant
First Claim
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1. A capacitive pressure sensor, comprising:

  • a substrate wafer defining a main substrate recess and having a first electrode;

    a diaphragm wafer defining a main diaphragm recess and having a second electrode;

    one of the substrate and diaphragm wafers defining an independent via recess, wherein the diaphragm wafer is bonded to the substrate wafer such that the substrate and diaphragm recesses form a height differentiated pressure chamber, and the via recess forms a via chamber,wherein a depth of the via recess is less than a depth of the corresponding main recess in the same wafer.

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