Capacitive pressure sensors for high temperature applications

• US 9,464,950 B2
• Filed: 02/20/2014
• Issued: 10/11/2016
• Est. Priority Date: 11/15/2013
• Status: Active Grant

• Current Assignee: Rosemount Aerospace, Inc. (Rtx Corporation)
• Original Assignee: Rosemount Aerospace, Inc. (Rtx Corporation)
• Inventors: Zhang, Weibin, Fink, Anita, Fahimi, Saeed, Childress, Kimiko J.
• Primary Examiner(s): Kirkland, III, Freddie
• Application Number:
  US14/185,156
• Publication Number:
  US 20150276512A1
• Time in Patent Office: 964 Days
• Field of Search: 738/626.26
• US Class Current: 1/1
• CPC Class Codes: G01L 1/14 by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
• CPC Class Codes: G01L 19/0076 using buried connections
• CPC Class Codes: G01L 19/0618 Overload protection
• CPC Class Codes: G01L 9/0047 Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness
• CPC Class Codes: G01L 9/0075 using a ceramic diaphragm, e.g. alumina, fused quartz, glass

Abstract

A capacitive pressure sensor includes a substrate wafer and a diaphragm wafer. The substrate wafer defines a substrate recess with a first recess. The diaphragm wafer defines a diaphragm recess with a second recess. The diaphragm wafer is bonded to the substrate wafer such that the substrate and diaphragm recesses form a height differentiated pressure chamber.

Claims

1. A capacitive pressure sensor, comprising:

a substrate wafer defining a main substrate recess and having a first electrode;

a diaphragm wafer defining a main diaphragm recess and having a second electrode;

one of the substrate and diaphragm wafers defining an independent via recess, wherein the diaphragm wafer is bonded to the substrate wafer such that the substrate and diaphragm recesses form a height differentiated pressure chamber, and the via recess forms a via chamber,

wherein a depth of the via recess is less than a depth of the corresponding main recess in the same wafer.

2. A sensor as recited in claim 1, further including at least two vias and at least two leads, wherein the vias extend through the substrate wafer and into the via chamber, wherein the leads extend between the electrodes and the via chamber.

3. A sensor as recited in claim 2, wherein a via is formed within a tapered aperture defined by the substrate wafer.

4. A sensor as recited in claim 3, wherein the via recess is physically sealed to form a hermetic pressure chamber during via formation.

5. A sensor as recited in claim 4, wherein the via is formed by metallic film deposition formation.

6. A sensor as recited in claim 1, wherein the substrate wafer is bonded to the diaphragm wafer by direct wafer bonding.

7. A sensor as recited in claim 1, further including an intermediate layer disposed between the substrate and diaphragm wafers and bonding the substrate wafer to the diaphragm wafer.

8. A sensor as recited in claim 1, further including a limit body defined by one of diaphragm and substrate wafers, wherein the limit body is disposed inside the pressure chamber.

9. A sensor as recited in claim 1, wherein at least one of the wafers is constructed from a material selected from the group consisting of sapphire, quartz, and silicon carbide.

10. A sensor as recited in claim 1, wherein at least one of the first and second electrodes is constructed from a material selected from the group consisting of gold, tantalum, platinum, palladium, iridium and corresponding doped alloys thereof.

11. A sensor as recited in claim 1, wherein at least one of the first and second vias is constructed from a material selected from the group consisting of gold, tantalum, platinum, palladium, iridium and corresponding doped alloys thereof.

12. A method of making a capacitive pressure sensor, comprising:

defining a differentiated height substrate recess in a substrate wafer;

defining a diaphragm recess in a diaphragm wafer;

defining a via recess in one of the diaphragm and substrate wafers;

bonding the substrate wafer to the diaphragm wafer such that the differentiated height substrate recess and diaphragm recess form a height differentiated pressure chamber with a via chamber; and

forming a via extending through the substrate wafer and into the via chamber.

13. A method as recited in claim 12, wherein a depth of the via recess is less than a depth of the corresponding main recess in the same wafer.

14. A method as recited in claim 12, further including:

defining an electrode in the differentiated height substrate recess of the substrate wafer, wherein forming a via extending through the substrate wafer and into the via chamber includes forming a via in the differentiated height substrate recess of the substrate wafer.