×

Resistive touch sensor system and method

  • US 9,465,477 B2
  • Filed: 09/26/2014
  • Issued: 10/11/2016
  • Est. Priority Date: 09/27/2013
  • Status: Active Grant
First Claim
Patent Images

1. A resistive touch sensor system comprising:

  • (a) touch sensor array (TSA);

    (b) array column driver (ACD);

    (c) column switching register (CSR);

    (d) column driving source (CDS);

    (e) array row sensor (ARS);

    (f) row switching register (RSR);

    (g) analog to digital converter (ADC); and

    (h) computing control device (CCD);

    wherein;

    said TSA comprises a variable impedance array (VIA) comprising VIA columns and VIA rows;

    said VIA comprises a first layer having a top side and a bottom side;

    said first layer comprises a force sensing material;

    said VIA comprises a second layer having a top side and a bottom side;

    said second layer comprises exposed coplanar drive electrodes;

    said second layer further comprises coplanar sense electrodes;

    said VIA is configured to electrically couple a plurality of interlinked impedance columns (IIC) within said TSA with a plurality of interlinked impedance rows (IIR) within said TSA;

    said IIC further comprises a plurality of individual column impedance elements (ICIE) electrically connected in series between said drive electrodes;

    said IIR further comprises a plurality of individual row impedance elements (IRIE) electrically connected in series between said sense electrodes;

    said ACD is configured to select said IIC within said TSA based on said CSR;

    said ACD is configured to electrically drive said selected IIC using said CDS;

    said CDS is configured to power one or more of said drive electrodes while driving one or more of said drive electrodes to ground potential;

    said ARS is configured to select said IIR within said TSA based on said RSR while simultaneously driving one or more of said sense electrodes to ground potential;

    said ADC is configured to sense the electrical state of said selected IIR and convert said electrical state to a sensed digital value (SDV);

    said electrical state is determined by the sum of current contributions of variable impedance elements within said VIA, where the current contribution of each of said variable impedance elements is determined by a voltage divider formed between the columns of said VIA, a current divider formed between the rows of said VIA, and the state of said each of said variable impedance elements, to produce a sensed current for a given row-column intersection with said VIA; and

    said CCD is configured to sample said SDV from said ADC at a plurality of positions within said TSA to form a touch sensor matrix (TSM) data structure.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×